{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,7]],"date-time":"2026-02-07T12:58:46Z","timestamp":1770469126795,"version":"3.49.0"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"13","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2024,7,10]]},"DOI":"10.1587\/elex.21.20240235","type":"journal-article","created":{"date-parts":[[2024,5,27]],"date-time":"2024-05-27T22:17:07Z","timestamp":1716848227000},"page":"20240235-20240235","source":"Crossref","is-referenced-by-count":1,"title":["A 0.98ppm\/\u00b0C, high PSR, low noise curvature-compensated CMOS bandgap reference with resistor-less low-pass filter"],"prefix":"10.1587","volume":"21","author":[{"given":"Chenchen","family":"Ye","sequence":"first","affiliation":[{"name":"School of Electronic and Information Engineering, Soochow University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Erxi","family":"Fang","sequence":"additional","affiliation":[{"name":"School of Electronic and Information Engineering, Soochow University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Siyuan","family":"Qi","sequence":"additional","affiliation":[{"name":"School of Electronic and Information Engineering, Soochow University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haoyang","family":"Ping","sequence":"additional","affiliation":[{"name":"School of Electronic and Information Engineering, Soochow University"},{"name":"School of Future Science and Engineering, Soochow University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] K. Chen, <i>et al<\/i>.: \u201cA 1.16-V 5.8-to-13.5-ppm\/\u00b0C curvature-compensated CMOS bandgap reference circuit with a shared offset-cancellation method for internal amplifiers,\u201d IEEE J. Solid-State Circuits <b>56<\/b> (2021) 267 (DOI: 10.1109\/JSSC.2020.3033467).","DOI":"10.1109\/JSSC.2020.3033467"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] C.-C. Lee, <i>et al<\/i>.: \u201cA high-precision bandgap reference with a V-curve correction circuit,\u201d IEEE Access <b>8<\/b> (2020) 62632 (DOI: 10.1109\/ACCESS.2020.2984800).","DOI":"10.1109\/ACCESS.2020.2984800"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] X. Ming, <i>et al<\/i>.: \u201cA high-precision compensated CMOS bandgap voltage reference without resistors,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>57<\/b> (2010) 767 (DOI: 10.1109\/TCSII.2010.2067770).","DOI":"10.1109\/TCSII.2010.2067770"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] X. Xin, <i>et al<\/i>.: \u201cA 0.6-V, 1.56-nW, 5.87-ppm\/\u00b0C, 0.23<i>%<\/i>\/V CMOS-only subthreshold voltage reference with the threshold voltage difference,\u201d Circuits Syst. Signal Process. <b>41<\/b> (2022) 4256 (DOI: 10.1007\/s00034-022-01994-9).","DOI":"10.1007\/s00034-022-01994-9"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] T. Yan, <i>et al<\/i>.: \u201cA -40\u00b0C-125\u00b0C, 1.08ppm\/\u00b0C, 918nW bandgap voltage reference with segmented curvature compensation,\u201d Microelectron. J. <b>105<\/b> (2020) 104897 (DOI: 10.1016\/j.mejo.2020.10 4897).","DOI":"10.1016\/j.mejo.2020.104897"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] Y. Ji, <i>et al<\/i>.: \u201cA 20.5-nW resistor-less bandgap voltage reference with self-biased compensation for process variations,\u201d IEEE Trans. Very Lagre Scale Integr. (VLSI) Syst. <b>30<\/b> (2022) 840 (DOI: 10.1109\/tvlsi.2022.3158729).","DOI":"10.1109\/TVLSI.2022.3158729"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] Y. Ji, <i>et al<\/i>.: \u201cA 20.5-nW resistor-less bandgap voltage reference with self-biased compensation for process variations,\u201d IEEE Trans. Very Lagre Scale Integr. (VLSI) Syst. <b>30<\/b> (2022) 840 (DOI: 10.1109\/tvlsi.2022.3158729).","DOI":"10.1109\/TVLSI.2022.3158729"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] H. Luo, <i>et al<\/i>.: \u201cA 1-V 2.69-ppm\/\u00b0C 0.8-\u00b5W bandgap reference with piecewise exponential curvature compensation,\u201d Microelectron. J. <b>121<\/b> (2022) 105368 (DOI: 10.1016\/j.mejo.2022.105368).","DOI":"10.1016\/j.mejo.2022.105368"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] Y. Zhang, <i>et al<\/i>.: \u201cA picowatt, 3.88ppm\/\u00b0C, 0.011%\/V subthreshold CMOS voltage reference biased by GSCC current source,\u201d Analog Integr. Circ. Sig. Process. <b>112<\/b> (2022) 1 (DOI: 10.1007\/s10470-022-01993-5).","DOI":"10.1007\/s10470-022-01993-5"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] W. Huang, <i>et al<\/i>.: \u201cA sub-200nW all-in-one bandgap voltage and current reference without amplifiers,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>68<\/b> (2021) 121 (DOI: 10.1109\/TCSII.2020.3007195).","DOI":"10.1109\/TCSII.2020.3007195"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] H.-M. Chen, <i>et al<\/i>.: \u201cA sub-1ppm\/\u00b0C precision bandgap reference with adjusted-temperature-curvature compensation,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>64<\/b> (2017) 1308 (DOI: 10.1109\/TCSI.2017.2658186).","DOI":"10.1109\/TCSI.2017.2658186"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] R. Wang, <i>et al<\/i>.: \u201cA sub-1ppm\/\u00b0C current-mode CMOS bandgap reference with piecewise curvature compensation,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>65<\/b> (2018) 904 (DOI: 10.1109\/TCSI.2017.2771801).","DOI":"10.1109\/TCSI.2017.2771801"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] L. Que, <i>et al<\/i>.: \u201cA high PSRR bandgap voltage reference with piecewise compensation,\u201d Microelectron. J. <b>95<\/b> (2020) 104660 (DOI: 10.1016\/j.mejo.2019.104660).","DOI":"10.1016\/j.mejo.2019.104660"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] X. Fu, <i>et al<\/i>.: \u201cLow noise, high PSRR, high-order piecewise curvature compensated CMOS bandgap reference,\u201d IEEE Access <b>10<\/b> (2022) 110970 (DOI: 10.1109\/ACCESS.2022.3215544).","DOI":"10.1109\/ACCESS.2022.3215544"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] X. Li, <i>et al<\/i>.: \u201cA curvature-compensated CMOS bandgap with negative feedback technique,\u201d Microelectron. J. <b>52<\/b> (2016) 104 (DOI: 10.1016\/j.mejo.2016.03.011).","DOI":"10.1016\/j.mejo.2016.03.011"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] G. Zhu, <i>et al<\/i>.: \u201cA 4.6-ppm\/\u00b0C high-order curvature compensated bandgap reference for BMIC,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>66<\/b> (2019) 1492 (DOI: 10.1109\/TCSII.2018.2889808).","DOI":"10.1109\/TCSII.2018.2889808"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] Y. Liu, <i>et al<\/i>.: \u201cA 0.5-V-supply, 37.8-nW, 17.6-ppm\/\u00b0C switched-capacitor bandgap reference with second-order curvature compensation,\u201d Microelectron. J. <b>87<\/b> (2019) 136 (DOI: 10.1016\/j.mejo.2019.02.017).","DOI":"10.1016\/j.mejo.2019.02.017"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] Q. Duan and J. Roh: \u201cA 1.2-V 4.2-ppm\/\u00b0C high-order curvature-compensated CMOS bandgap reference,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>62<\/b> (2015) 662 (DOI: 10.1109\/TCSI.2014.2374832).","DOI":"10.1109\/TCSI.2014.2374832"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] J. Qu and C. Wu: \u201cA low temperature coefficient wide temperature range bandgap reference with high power supply rejection,\u201d IEICE Electron. Express <b>20<\/b> (2023) 20230104 (DOI: 10.1587\/elex.20.20230104).","DOI":"10.1587\/elex.20.20230104"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] P. Liu, <i>et al<\/i>.: \u201cA novel low-noise bandgap reference with an active RC filter,\u201d 2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (2019) 16 (DOI: 10.1109\/ICICM48536.2019.8977191).","DOI":"10.1109\/ICICM48536.2019.8977191"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] M. Kim and S. Cho: \u201cA 0.0082-mm<sup>2<\/sup>, 192-nW single BJT branch bandgap reference in 0.18-\u00b5m CMOS,\u201d IEEE Solid-State Circuits Lett. <b>3<\/b> (2020) 426 (DOI: 10.1109\/LSSC.2020.3025226).","DOI":"10.1109\/LSSC.2020.3025226"},{"key":"22","unstructured":"[22] X. Wu, <i>et al<\/i>.: \u201cDesign and implementation of a fast set-up and low-noise bandgap reference,\u201d ACTA ELECTRONICA SINICA <b>49<\/b> (2021) 2195 (DOI: 10.12263\/DZXB.20201143)."},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] Q. Zhou, <i>et al<\/i>.: \u201cA high PSRR curvature compensated bandgap voltage reference for LDO,\u201d 2023 IEEE 7th Information Technology and Mechatronics Engineering Conference (2023) 625 (DOI: 10.1109\/ITOEC57671.2023.10291297).","DOI":"10.1109\/ITOEC57671.2023.10291297"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] K.M. Tham and K. Nagaraj: \u201cA low supply voltage high PSRR voltage reference in CMOS process,\u201d IEEE J. Solid-State Circuits <b>30<\/b> (1995) 586 (DOI: 10.1109\/4.384173).","DOI":"10.1109\/4.384173"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] G. Pan, <i>et al<\/i>.: \u201cA 1.8V 0.918ppm\/\u00b0C CMOS bandgap voltage reference with curvature-compensated,\u201d IEICE Electron. Express <b>16<\/b> (2019) 20190616 (DOI: 10.1587\/elex.16.20190616).","DOI":"10.1587\/elex.16.20190616"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] G. Pan, <i>et al<\/i>.: \u201cA 1.8V 0.918ppm\/\u00b0C CMOS bandgap voltage reference with curvature-compensated,\u201d IEICE Electron. Express <b>16<\/b> (2019) 20190616 (DOI: 10.1587\/elex.16.20190616).","DOI":"10.1587\/elex.16.20190616"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] B. Zhou, <i>et al<\/i>.: \u201cSub-1-V BGR and POR hybrid circuit with 2.25-\u00b5A current dissipation and low complexity,\u201d IEEE Trans. Very Lagre Scale Integr. (VLSI) Syst. <b>28<\/b> (2020) 2228 (DOI: 10.1109\/TVLSI.2020.3009452).","DOI":"10.1109\/TVLSI.2020.3009452"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] L. Wang, <i>et al<\/i>.: \u201cAnalysis and design of a current-mode bandgap reference with high power supply ripple rejection,\u201d Microelectron. J. <b>68<\/b> (2017) 7 (DOI: 10.1016\/j.mejo.2017.08.011).","DOI":"10.1016\/j.mejo.2017.08.011"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] D.-K. Kim, <i>et al<\/i>.: \u201cA BGR-recursive low-dropout regulator achieving high PSR in the low- to mid-frequency range,\u201d IEEE Trans. Power Electron. <b>35<\/b> (2020) 13441 (DOI: 10.1109\/TPEL.2020.2996771).","DOI":"10.1109\/TPEL.2020.2996771"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] Y. Meng, <i>et al<\/i>.: \u201cA -80dB PSRR 1.166ppm\/\u00b0C bandgap voltage reference with improved high-order temperature compensation,\u201d IEICE Electron. Express <b>20<\/b> (2023) 20230278 (DOI: 10.1587\/elex.20.20230278).","DOI":"10.1587\/elex.20.20230278"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/13\/21_21.20240235\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,13]],"date-time":"2024-07-13T03:29:32Z","timestamp":1720841372000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/13\/21_21.20240235\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,7,10]]},"references-count":30,"journal-issue":{"issue":"13","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.21.20240235","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,7,10]]},"article-number":"21.20240235"}}