{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,15]],"date-time":"2024-09-15T00:12:51Z","timestamp":1726359171771},"reference-count":31,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"17","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2024,9,10]]},"DOI":"10.1587\/elex.21.20240348","type":"journal-article","created":{"date-parts":[[2024,7,23]],"date-time":"2024-07-23T22:12:01Z","timestamp":1721772721000},"page":"20240348-20240348","source":"Crossref","is-referenced-by-count":0,"title":["A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm"],"prefix":"10.1587","volume":"21","author":[{"given":"Jiashun","family":"Lang","sequence":"first","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Beibei","family":"Lv","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Di","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"PengFei","family":"Zhang","sequence":"additional","affiliation":[{"name":"Zhejiang Zhenlei Technology Co., Ltd."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiongjiong","family":"Mo","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhiyu","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hua","family":"Chen","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Faxin","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Aeronautics and Astronautics, Zhejiang University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] F. Zeng, <i>et al<\/i>.: \u201cA comprehensive review of recent progress on GaN high electron mobility transistors: devices, fabrication and reliability,\u201d Electronics <b>7<\/b> (2018) (DOI: 10.3390\/electronics7120377).","DOI":"10.3390\/electronics7120377"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] M. Kameche: \u201cDistortion properties of GaN switches at high-temperatures,\u201d Int. J. Infrared Millimeter Waves <b>27<\/b> (2007) 1133 (DOI: 10.1007\/s10762-006-9128-1).","DOI":"10.1007\/s10762-006-9128-1"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] R. Chu: \u201cGaN power switches on the rise: demonstrated benefits and unrealized potentials,\u201d Appl. Phys. Lett. <b>116<\/b> (2020) 090502 (DOI: 10.1063\/1.5133718).","DOI":"10.1063\/1.5133718"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] M. Meneghini, <i>et al<\/i>.: \u201cGaN-based power devices: physics, reliability, and perspectives,\u201d J. Appl. Phys. <b>130<\/b> (2021) 181101 (DOI: 10.1063\/5.0061354).","DOI":"10.1063\/5.0061354"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] G. Polli, <i>et al<\/i>.: \u201cHigh power-handling SPDT switch in 0.25-\u00b5m GaN technology,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>28<\/b> (2018) (DOI: 10.1002\/mmce.21413).","DOI":"10.1002\/mmce.21413"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] K. Hettak, <i>et al<\/i>.: \u201cBroadband high-power GaN SPDT switch using stacked-shunt fets and resonance inductors,\u201d Microw. Opt. Technol. Lett. <b>55<\/b> (2013) 2093 (DOI: 10.1002\/mop.27788).","DOI":"10.1002\/mop.27788"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] T. Kim, <i>et al<\/i>.: \u201cHighly linear K-\/Ka-band SPDT switch based on traveling-wave concept in a 150-Nm GaN pHEMT process,\u201d IEEE Microw. Wireless Compon. Lett. <b>32<\/b> (2022) 987 (DOI: 10.1109\/LMWC.2022.3161498).","DOI":"10.1109\/LMWC.2022.3161498"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] J. Gareau, <i>et al<\/i>.: \u201cReview of loss distribution, analysis, and measurement techniques for GaN HEMTs,\u201d IEEE Trans. Power Electron. <b>35<\/b> (2020) 7405 (DOI: 10.1109\/TPEL.2019.2954819).","DOI":"10.1109\/TPEL.2019.2954819"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] Z. Hu, <i>et al<\/i>.: \u201cA 71-77-GHz switch-based single-chip front end in 0.13-Mm GaN technology,\u201d IEEE Microw. Wireless Compon. Lett. <b>33<\/b> (2023) 1031 (DOI: 10.1109\/LMWT.2023.3253579).","DOI":"10.1109\/LMWT.2023.3253579"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] G. Dambrine, <i>et al<\/i>.: \u201cA new method for determining the FET small-signal equivalent circuit,\u201d IEEE Trans. Microw. Theory Techn. <b>36<\/b> (1988) 1151 (DOI: 10.1109\/22.3650).","DOI":"10.1109\/22.3650"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] A. Khusro, <i>et al<\/i>.: \u201cAn accurate and simplified small signal parameter extraction method for GaN HEMT,\u201d Int. J. Circuit Theory Appl. <b>47<\/b> (2019) 941 (DOI: 10.1002\/cta.2622).","DOI":"10.1002\/cta.2622"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] S. Khandelwal, <i>et al<\/i>.: \u201cASM GaN: industry standard model for GaN RF and power devices--part 1: DC, CV, and RF model,\u201d IEEE Trans. Electron Devices <b>66<\/b> (2019) 80 (DOI: 10.1109\/TED.2018.2867874).","DOI":"10.1109\/TED.2018.2867874"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] I. Angelov, <i>et al<\/i>.: \u201cExtensions of the Chalmers nonlinear HEMT and MESFET model,\u201d IEEE Trans. Microw. Theory Techn. <b>44<\/b> (1996) 1664 (DOI: 10.1109\/22.538957).","DOI":"10.1109\/22.538957"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] G. Crupi, <i>et al<\/i>.: \u201cThe large world of FET small-signal equivalent circuits: FET small-signal equivalent circuits,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>26<\/b> (2016) 749 (DOI: 10.1002\/mmce.21028).","DOI":"10.1002\/mmce.21028"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] A.R. Alt, <i>et al<\/i>.: \u201cTransistor modeling: robust small-signal equivalent circuit extraction in various HEMT technologies,\u201d IEEE Microw. Mag. <b>14<\/b> (2013) 83 (DOI: 10.1109\/MMM.2013.2248593).","DOI":"10.1109\/MMM.2013.2248593"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] L. Xiaobin, <i>et al<\/i>.: \u201cEquivalent circuit model of millimeter-wave AlGaN\/GaN HEMTs,\u201d IEICE Electron. Express <b>11<\/b> (2014) 20140613 (DOI: 10.1587\/elex.11.20140613).","DOI":"10.1587\/elex.11.20140613"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] D. Maafri, <i>et al<\/i>.: \u201cAn efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices,\u201d Microw. Opt. Technol. Lett. <b>60<\/b> (2018) 455 (DOI: 10.1002\/mop.30982).","DOI":"10.1002\/mop.30982"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] M. Geng, <i>et al<\/i>.: \u201cSmall-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method,\u201d Chinese Phys. B <b>25<\/b> (2016) 117301 (DOI: 10.1088\/1674-1056\/25\/11\/117301).","DOI":"10.1088\/1674-1056\/25\/11\/117301"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] Y. Tao, <i>et al<\/i>.: \u201cComplete parasitic-capacitance-shell extraction of high-frequency switch-HEMT equivalent-circuit model,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>30<\/b> (2020) (DOI: 10.1002\/mmce.22212).","DOI":"10.1002\/mmce.22212"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] Y. Tao, <i>et al<\/i>.: \u201cDirect extraction method of HEMT switch small-signal model with multiparasitic capacitive current path,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>29<\/b> (2019) e21690 (DOI: 10.1002\/mmce.21690).","DOI":"10.1002\/mmce.21690"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] L. Luo, <i>et al<\/i>.: \u201cSmall-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch,\u201d J. Semicond. <b>41<\/b> (2020) 032102 (DOI: 10.1088\/1674-4926\/41\/3\/032102).","DOI":"10.1088\/1674-4926\/41\/3\/032102"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] Z. Hu, <i>et al<\/i>.: \u201cA circuit-based neuro-space mapping technique for small-signal modeling of multi-gate GAN HEMT switches,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>32<\/b> (2022) (DOI: 10.1002\/mmce.23396).","DOI":"10.1002\/mmce.23396"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] X. Du, <i>et al<\/i>.: \u201cANN-based large-signal model of AlGaN\/GaN HEMTs with accurate buffer-related trapping effects characterization,\u201d IEEE Trans. Microw. Theory Techn. <b>68<\/b> (2020) 3090 (DOI: 10.1109\/TMTT.2020.2990171).","DOI":"10.1109\/TMTT.2020.2990171"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] X. Zhao, <i>et al<\/i>.: \u201cA new inter-electrode coupling capacitance extraction method for deep-submicron AlGaN\/GaN HEMTs,\u201d IEICE Electron. Express <b>14<\/b> (2017) 20170559 (DOI: 10.1587\/elex.14.20170559).","DOI":"10.1587\/elex.14.20170559"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] Y. Chen, <i>et al<\/i>.: \u201cA reliable and efficient small-signal parameter extraction method for GaN HEMTs,\u201d Int. J. Numer. Model.-Electron. Netw. Device Fields <b>33<\/b> (2020) e2540 (DOI: 10.1002\/jnm.2540).","DOI":"10.1002\/jnm.2540"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] X. Du, <i>et al<\/i>.: \u201cImproved small-signal hybrid parameter-extraction technique for ALGAN\/GAN high electron mobility transistors,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>31<\/b> (2021) (DOI: 10.1002\/mmce.22562).","DOI":"10.1002\/mmce.22562"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] L. Yu, <i>et al<\/i>.: \u201cSmall-signal model parameter extraction for AlGaN\/GaN HEMT,\u201d J. Semicond. <b>37<\/b> (2016) 034003 (DOI: 10.1088\/1674-4926\/37\/3\/034003).","DOI":"10.1088\/1674-4926\/37\/3\/034003"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] G. Crupi, <i>et al<\/i>.: \u201cAccurate multibias equivalent-circuit extraction for GaN HEMTs,\u201d IEEE Trans. Microw. Theory Techn. <b>54<\/b> (2006) 3616 (DOI: 10.1109\/TMTT.2006.882403).","DOI":"10.1109\/TMTT.2006.882403"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] S. Husain, <i>et al<\/i>.: \u201cAccurate, efficient and reliable small-signal modeling approaches for GaN HEMTs,\u201d IEEE Access <b>11<\/b> (2023) 106833 (DOI: 10.1109\/ACCESS.2023.3317530).","DOI":"10.1109\/ACCESS.2023.3317530"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] H. Ishida, <i>et al<\/i>.: \u201cA high-power RF switch IC using AlGaN\/GaN HFETs with single-stage configuration,\u201d IEEE Trans. Electron Devices <b>52<\/b> (2005) 1893 (DOI: 10.1109\/TED.2005.851835).","DOI":"10.1109\/TED.2005.851835"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] W. Ciccognani, <i>et al<\/i>.: \u201cHigh isolation microstrip GaN-HEMT single-FET switch: high isolation GaN-HEMT single-FET switch,\u201d Int. J. RF Microw. Comput-Aid. Eng. <b>20<\/b> (2010) 391 (DOI: 10.1002\/mmce.20443).","DOI":"10.1002\/mmce.20443"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/17\/21_21.20240348\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,9,14]],"date-time":"2024-09-14T03:27:19Z","timestamp":1726284439000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/17\/21_21.20240348\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,9,10]]},"references-count":31,"journal-issue":{"issue":"17","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.21.20240348","relation":{},"ISSN":["1349-2543"],"issn-type":[{"type":"electronic","value":"1349-2543"}],"subject":[],"published":{"date-parts":[[2024,9,10]]},"article-number":"21.20240348"}}