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Wang: \u201cThe influence with reliability of motional satellite by the single-event phenomena,\u201d Micronanoelectronic Technology <b>35<\/b> (1998) 1."},{"key":"2","unstructured":"[2] P. Chen: <i>Radiation Effects on Semiconductor Devices and Integrated Circuits<\/i>(National Defense Industry Press, Beijing, 2005)."},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] A.H. Johnston: \u201cSpace radiation effects and reliability considerations for micro- and optoelectronic devices,\u201d IEEE Trans. Device Mater. Rel. <b>10<\/b> (2010) 449 (DOI: 10.1109\/TDMR.2010.2048111).","DOI":"10.1109\/TDMR.2010.2048111"},{"key":"4","unstructured":"[4] H.C. Koons, <i>et al.<\/i>: \u201cThe impact of the space environment on space systems,\u201d 6<sup>th<\/sup> Space Charging Technology Conference (1999)."},{"key":"5","unstructured":"[5] A.C. Tribble: \u201cThe space environment and its impact on spacecraft design,\u201d AIAA Aerospace Sciences Meeting &amp; Exhibit 31st AIAA Aerospace Sciences Meeting and Exhibit (2013)."},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] M.A.G. Darrin, <i>et al<\/i>.: \u201cThe impact of the space radiation environment on micro electro mechanical systems (MEMS) and microstructures,\u201d European Conference on Radiation &amp; Its Effects on Components &amp; Systems (2005) (DOI: 10.1109\/RADECS.2005.4365617).","DOI":"10.1109\/RADECS.2005.4365617"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] L.W. Massengill, <i>et al.<\/i>: \u201cTechnology scaling and soft error reliability,\u201d 2012 IEEE International Reliability Physics Symposium (IRPS) (2012) 3C.1.1 (DOI: 10.1109\/IRPS.2012.6241810).","DOI":"10.1109\/IRPS.2012.6241810"},{"key":"8","unstructured":"[8] V. Huard, <i>et al<\/i>.: \u201cTechnology scaling and reliability: Challenges and opportunities,\u201d Electron Devices Meeting (2015) (DOI: 10.1109\/IEDM.2015.7409743)."},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] S. DasGupta, <i>et al.<\/i>: \u201cEffect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS,\u201d IEEE Trans. Nucl. Sci. <b>54<\/b> (2007) 2407 (DOI: 10.1109\/TNS.2007.910863).","DOI":"10.1109\/TNS.2007.910863"},{"key":"10","unstructured":"[10] C. Gao, <i>et al<\/i>.: \u201cStudy on single event transient in a deep submicron CMOS inverter,\u201d Microelectronics <b>5<\/b> (2019) 729."},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] B.M. Gadlage: \u201cComparison of heavy ion and proton induced combinatorial and sequential logic error rates in a deep submicron process,\u201d IEEE Trans. Nucl. Sci. <b>52<\/b> (2005) 2120 (DOI: 10.1109\/TNS.2005.860678).","DOI":"10.1109\/TNS.2005.860678"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] N.N. Mahatme, <i>et al<\/i>.: \u201cComparison of combinational and sequential error rates for a deep submicron process,\u201d IEEE Trans. Nucl. Sci. <b>58<\/b> (2011) 2719 (DOI: 10.1109\/tns.2011.2171993).","DOI":"10.1109\/TNS.2011.2171993"},{"key":"13","unstructured":"[13] Y. Liu: \u201cResearch on SOI based on TDI and SEU effect,\u201d Master\u2019s thesis, University of Electronic Science and Technology of China (2017)."},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] W. Jin, <i>et al.<\/i>: \u201cSelf-heating characterization for SOI MOSFET based on AC output conductance,\u201d International Electron Devices Meeting 1999 Technical Digest (1999) 175 (DOI: 10.1109\/IEDM.1999.823873).","DOI":"10.1109\/IEDM.1999.823873"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] Z. Zhang, <i>et al<\/i>.: \u201cInvestigation of threshold ion range for accurate single event upset measurements in both SOI and bulk technologies,\u201d IEEE Trans. Nucl. Sci. <b>61<\/b> (2014) 1459 (DOI: 10.1109\/TNS.2014.2325063).","DOI":"10.1109\/TNS.2014.2325063"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] L. Zhang, <i>et al<\/i>.: \u201cSingle event upset sensitivity of D-flip flop: comparison of PDSOI with bulk Si at 130nm technology node,\u201d IEEE Trans. Nucl. Sci. <b>64<\/b> (2017) 683 (DOI: 10.1109\/TNS.2016.2636338).","DOI":"10.1109\/TNS.2016.2636338"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] H. Wang, <i>et al<\/i>.: \u201cSEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology,\u201d Microelectronics Reliability <b>72<\/b> (2017) 39 (DOI: 10.1016\/j.microrel.2017.04.003).","DOI":"10.1016\/j.microrel.2017.04.003"},{"key":"18","unstructured":"[18] H. Li: \u201cSEE evaluation method for DFF cell based CMOS\/SOI technology,\u201d Transactions of Beijing Institute of Technology <b>38<\/b> (2018) 63 (DOI: 10.15918\/j.tbit1001-0645.2018.01.011)."},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] L. Wang, <i>et al.<\/i>: \u201cExperimental study of single event upset and single event latch-up in SOl SRAM,\u201d 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (2016) 1506 (DOI: 10.1109\/ICSICT.2016.7998784).","DOI":"10.1109\/ICSICT.2016.7998784"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] Y. Luo, <i>et al<\/i>.: \u201cSingle-event cluster multibit upsets due to localized latch-up in a 90 nm COTS SRAM containing SEL mitigation design,\u201d IEEE Trans. Nucl. Sci. <b>61<\/b> (2014) 1918 (DOI: 10.1109\/TNS.2014.2314722).","DOI":"10.1109\/TNS.2014.2314722"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] B. Wang, <i>et al.<\/i>: \u201cA comparison of heavy ion induced single event upset susceptibility in unhardened 6T\/SRAM and hardened ADE\/SRAM,\u201d Nuclear Instruments and Methods in Physics Research B <b>406<\/b> (2017) 437 (DOI: 10.1016\/j.nimb.2017.01.034).","DOI":"10.1016\/j.nimb.2017.01.034"},{"key":"22","unstructured":"[22] Z.S. Yang, <i>et al<\/i>.: \u201cApplication mode of the evaluation outcomes of mountainous land suitability for urban construction in compilation of general land-use planning in Yunnan Province--based on the strategy of \u201cConstructing Mountainous Cities\u201d and its effects\u201d (2016)."},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] W.E. Calienes Bartra, <i>et al<\/i>.: \u201cFDSOI and bulk CMOS SRAM cell resilience to radiation effects,\u201d Microelectronics Reliability <b>64<\/b> (2016) 152 (DOI: 10.1016\/j.microrel.2016.07.133).","DOI":"10.1016\/j.microrel.2016.07.133"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] T.D. Loveless, <i>et al<\/i>.: \u201cParametric variability affecting 45nm SOI SRAM single event upset cross-sections,\u201d IEEE Trans. Nucl. Sci. <b>57<\/b> (2010) 3228 (DOI: 10.1109\/TNS.2010.2081688).","DOI":"10.1109\/TNS.2010.2081688"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] D. Tang, <i>et al.<\/i>: \u201cSingle event upset sensitivity of 45nm FDSOI and SOI FinFET SRAM,\u201d Science China <b>7<\/b> (2013) 6 (DOI: 10.1007\/s11431-012-5125-x).","DOI":"10.1007\/s11431-012-5125-x"},{"key":"26","unstructured":"[26] B. Liang, <i>et al.<\/i>: \u201cPropagation induced pulse broadening of single event transient,\u201d Journal of Semiconductors <b>29<\/b> (2008) 1827."},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] P. Huang, <i>et al<\/i>.: \u201cMechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology,\u201d Chinese Physics B <b>25<\/b> (2016) 036103 (DOI: 10.1088\/1674-1056\/25\/3\/036103).","DOI":"10.1088\/1674-1056\/25\/3\/036103"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] M. Chan, <i>et al.<\/i>: \u201cModeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs,\u201d Solid-State Electronics <b>48<\/b> (2004) 969 (DOI: 10.1016\/j.sse.2003.12.012).","DOI":"10.1016\/j.sse.2003.12.012"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] O. Musseau, <i>et al.<\/i>: \u201cLaser probing of bipolar amplification in 0.25-\u00b5mMOS\/SOI transistors,\u201d IEEE Trans. Nucl. Sci. <b>47<\/b> (2000) 2196 (DOI: 10.1109\/23.903753).","DOI":"10.1109\/23.903753"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] M.J. Gadlage, <i>et al.<\/i>: \u201cScaling trends in SET pulse widths in sub-100nm bulk CMOS processes,\u201d IEEE Trans. Nucl. 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