{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,20]],"date-time":"2025-12-20T21:59:21Z","timestamp":1766267961006,"version":"3.30.2"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"23","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2024,12,10]]},"DOI":"10.1587\/elex.21.20240525","type":"journal-article","created":{"date-parts":[[2024,9,26]],"date-time":"2024-09-26T22:12:56Z","timestamp":1727388776000},"page":"20240525-20240525","source":"Crossref","is-referenced-by-count":1,"title":["Research on damage effects of pHEMT low noise amplifiers under HPM injection"],"prefix":"10.1587","volume":"21","author":[{"given":"Ruxin","family":"Zheng","sequence":"first","affiliation":[{"name":"Research Center for Electromagnetic Environmental Effects, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhicheng","family":"Xue","sequence":"additional","affiliation":[{"name":"Research Center for Electromagnetic Environmental Effects, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chengjie","family":"Li","sequence":"additional","affiliation":[{"name":"Research Center for Electromagnetic Environmental Effects, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shiping","family":"Tang","sequence":"additional","affiliation":[{"name":"Research Center for Electromagnetic Environmental Effects, Southeast University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] L. 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Electron Devices <b>64<\/b> (2017) 3470 (DOI: 10.1109\/ted.2017.2713423).","DOI":"10.1109\/TED.2017.2713423"},{"key":"21","unstructured":"[21] M.S. Alam: \u201cEnhanced Emitter Transit Time for Heterojunction Bipolar Transistors (HBT),\u201d Advances in Electrical Engineering Systems <b>1<\/b> (2012)."},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] S.A. Campbell, <i>et al<\/i>.: \u201cMOSFET transistors fabricated with high permitivity TiO<sub>2<\/sub> dielectrics,\u201d IEEE Trans. Electron Devices <b>44<\/b> (1997) 104 (DOI: 10.1109\/16.554800).","DOI":"10.1109\/16.554800"},{"key":"23","unstructured":"[23] M. Lahsaini, <i>et al<\/i>.: \u201cDesign of broadband low noise amplifier based on HEMT transistors in the X-band,\u201d International Journal of Engineering Science &amp; Technology <b>5<\/b> (2013) 468."},{"key":"24","unstructured":"[24] M. 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Fuxing, <i>et al<\/i>.: \u201cStudy on high power microwave nonlinear effects and degradation characteristics of C-band low noise amplifier,\u201d Microelectronics Reliability <b>128<\/b> (2022) 114427 (DOI: 10.1016\/j.microrel.2021.114427).","DOI":"10.1016\/j.microrel.2021.114427"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] H. Wang, <i>et al<\/i>.: \u201cDamage effects and mechanism of GaAs solar cells induced by high-power microwaves,\u201d IEICE Electron. Express <b>18<\/b> (2021) 20210020 (DOI: 10.1587\/elex.18.20210020).","DOI":"10.1587\/elex.18.20210020"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/23\/21_21.20240525\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,14]],"date-time":"2024-12-14T03:27:32Z","timestamp":1734146852000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/21\/23\/21_21.20240525\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,12,10]]},"references-count":30,"journal-issue":{"issue":"23","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.21.20240525","relation":{},"ISSN":["1349-2543"],"issn-type":[{"type":"electronic","value":"1349-2543"}],"subject":[],"published":{"date-parts":[[2024,12,10]]},"article-number":"21.20240525"}}