{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,15]],"date-time":"2025-02-15T05:22:24Z","timestamp":1739596944204,"version":"3.37.1"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2025,2,10]]},"DOI":"10.1587\/elex.21.20240678","type":"journal-article","created":{"date-parts":[[2024,12,16]],"date-time":"2024-12-16T22:13:27Z","timestamp":1734387207000},"page":"20240678-20240678","source":"Crossref","is-referenced-by-count":0,"title":["Fabrication of through glass via (TGV) substrates using a pulse width modulated (PWM) vacuum suction system for molten solder filling"],"prefix":"10.1587","volume":"22","author":[{"given":"Seung-Han","family":"Chung","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering, Seoul National University"}]},{"given":"Jin-Yeong","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Foundry Engineering, Dankook University"}]},{"given":"Yong-Kweon","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Seoul National University"}]},{"given":"Seung-Ki","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Semiconductor Convergence Engineering, Dankook University"}]},{"given":"Jae-Hyoung","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Semiconductor Convergence Engineering, Dankook University"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] D. 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Ko, <i>et al<\/i>.: \u201cAdvanced solder TSV filling technology developed with vacuum and wave soldering,\u201d 2011 IEEE 61st Electronic Components and Technology Conference (ECTC) (2011) (DOI: 10.1109\/ECTC.2011.5898806)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/3\/22_21.20240678\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,2,15]],"date-time":"2025-02-15T03:28:20Z","timestamp":1739590100000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/3\/22_21.20240678\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,2,10]]},"references-count":30,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2025]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.21.20240678","relation":{},"ISSN":["1349-2543"],"issn-type":[{"type":"electronic","value":"1349-2543"}],"subject":[],"published":{"date-parts":[[2025,2,10]]},"article-number":"21.20240678"}}