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Amaratunga and F. Udrea: \u201cPower devices for high voltage integrated circuit: new device and technology concepts,\u201d Int. Semicond. Conf. (SMICND) (2001) 441 (DOI: 10.1109\/SMICND.2001.967503).","DOI":"10.1109\/SMICND.2001.967503"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] C. Kuratli, <i>et al.<\/i>: \u201cImplementation of high peak-current IGBT gate drive circuits in VLSI compatible BiCMOS technology,\u201d IEEE J. Solid-State Circuits <b>31<\/b> (1996) 924 (DOI: 10.1109\/4.508204).","DOI":"10.1109\/4.508204"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] A. Biber, <i>et al.<\/i>: \u201cAn IGBT gate drive ASIC with 3\u2006A\/12.5\u2006A CMOS output stages,\u201d Proc. Int. Symp. Power Semicond. Devices ICs (ISPSD) (1995) 411 (DOI: 10.1109\/ISPSD.1995.515073).","DOI":"10.1109\/ISPSD.1995.515073"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] W.C. Chen, <i>et al.<\/i>: \u201cA dynamic bootstrap voltage technique for a high-efficiency buck converter in a universal serial bus power delivery device,\u201d IEEE Trans. Power Electron. <b>31<\/b> (2016) 3002 (DOI: 10.1109\/TPEL.2015.2453511).","DOI":"10.1109\/TPEL.2015.2453511"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] R. Enne, <i>et al.<\/i>: \u201cComparator-controlled rectification at monolithic buck converters for higher input voltages,\u201d IEEE Trans. Power Electron. <b>27<\/b> (2012) 628 (DOI: 10.1109\/TPEL.2011.2171506).","DOI":"10.1109\/TPEL.2011.2171506"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] X. Zhang and D. Maksimovic: \u201cMultimode digital controller for synchronous buck converters operating over wide ranges of input voltages and load currents,\u201d IEEE Trans. Power Electron. <b>25<\/b> (2010) 1958 (DOI: 10.1109\/TPEL.2010.2043959).","DOI":"10.1109\/TPEL.2010.2043959"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] C.W. Kuo, <i>et al.<\/i>: \u201cClosed-loop gate-sensing active driver IC with adaptive delay compensation technique for silicon carbide power MOSFETs,\u201d Proc. Int. Symp. Power Semicond. Devices ICs (ISPSD) (2024) 462 (DOI: 10.1109\/ISPSD59661.2024.10579692).","DOI":"10.1109\/ISPSD59661.2024.10579692"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] S. Yu, <i>et al.<\/i>: \u201cA 400-V half bridge gate driver for normally-off GaN HEMTs with effective dv\/dt control and high dv\/dt immunity,\u201d IEEE Trans. Ind. Electron. <b>70<\/b> (2023) 741 (DOI: 10.1109\/TIE.2022.3153808).","DOI":"10.1109\/TIE.2022.3153808"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] T. Kang, <i>et al.<\/i>: \u201cDesign and analysis of 37.5% energy-recycling flyback-type class-D low-side gate driver IC with 5-to-15-V level conversion,\u201d IEEE Trans. Ind. Appl. <b>52<\/b> (2016) 3324 (DOI: 10.1109\/TIA.2016.2555919).","DOI":"10.1109\/TIA.2016.2555919"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] L. Shu, <i>et al.<\/i>: \u201cCrosstalk analysis and suppression for a closed-loop active IGBT gate driver,\u201d IEEE J. Emerg. Sel. Topics Power Electron. <b>7<\/b> (2019) 1931 (DOI: 10.1109\/JESTPE.2018.2869678).","DOI":"10.1109\/JESTPE.2018.2869678"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] H. Zhu, <i>et al.<\/i>: \u201cAn improved noise immune level-shifter via IGBT gate-emitter voltage detection,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180293 (DOI: 10.1587\/elex.15.20180293).","DOI":"10.1587\/elex.15.20180293"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] D. Zhou, <i>et al.<\/i>: \u201cA 20\u2006MHz 4\u2006A gate driver with 5.5 to 24\u2006V output drive voltage for wide bandgap FETs,\u201d IEICE Electron. Express <b>19<\/b> (2022) 20220267 (DOI: 10.1587\/elex.19.20220267).","DOI":"10.1587\/elex.19.20220267"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] G.H. Thuc and C.-J. Chen: \u201cA gate driver IC for GaN-based synchronous buck converter with a double-sided adaptive dead-time generator,\u201d IEEE Appl. Power Electron. Conf. Expo. (APEC) (2023) 283 (DOI: 10.1109\/APEC43580.2023.10131397).","DOI":"10.1109\/APEC43580.2023.10131397"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] D. Luo, <i>et al.<\/i>: \u201cA GaN driver for a bi-directional buck\/boost converter with three-level VGS protection and optimal-point tracking dead-time control,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>69<\/b> (2022) 2212 (DOI: 10.1109\/TCSI.2022.3146190).","DOI":"10.1109\/TCSI.2022.3146190"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] Y. Lee, <i>et al.<\/i>: \u201cA GaN driver IC with a TDC-based dead-time controller for GaN DC-DC buck converters,\u201d 20th Int. SoC Design Conf. (ISOCC) (2023) 33 (DOI: 10.1109\/ISOCC59558.2023.10396085).","DOI":"10.1109\/ISOCC59558.2023.10396085"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] D. Yan and D.B. Ma: \u201cA monolithic GaN power IC with on-chip gate driving, level shifting, and temperature sensing, achieving direct 48-V\/1-V DC-DC conversion,\u201d IEEE J. Solid-State Circuits <b>57<\/b> (2022) 3865 (DOI: 10.1109\/JSSC.2022.3201781).","DOI":"10.1109\/JSSC.2022.3201781"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] R. Grezaud, <i>et al.<\/i>: \u201cA gate driver with integrated deadtime controller,\u201d IEEE Trans. Power Electron. <b>31<\/b> (2016) 8409 (DOI: 10.1109\/TPEL.2016.2517679).","DOI":"10.1109\/TPEL.2016.2517679"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] A. Niwa, <i>et al.<\/i>: \u201cA dead-time-controlled gate driver using current-sense FET integrated in SiC MOSFET,\u201d IEEE Trans. Power Electron. <b>33<\/b> (2018) 3258 (DOI: 10.1109\/TPEL.2017.2704620).","DOI":"10.1109\/TPEL.2017.2704620"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] M.D. Glover, <i>et al.<\/i>: \u201cA UVLO circuit in SiC compatible with power MOSFET integration,\u201d IEEE J. Emerg. Sel. Topics Power Electron. <b>2<\/b> (2014) 425 (DOI: 10.1109\/JESTPE.2014.2313119).","DOI":"10.1109\/JESTPE.2014.2313119"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] S. Kawai, <i>et al.<\/i>: \u201cA digital gate driver IC with active gate waveform calibration technique achieving switching loss reduction by 24% and DESAT turn-off arbitrary waveform memory for overcurrent protection targeting 1200\u2006V SiC MOSFETs,\u201d 2023 IEEE Energy Convers. Congr. Expo. (ECCE) (2023) 5414 (DOI: 10.1109\/ECCE53617.2023.10362369).","DOI":"10.1109\/ECCE53617.2023.10362369"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] X. Huang, <i>et al.<\/i>: \u201cResearch on overcurrent detection and protection of high-power SiC MOSFET driver,\u201d 44th Annu. Conf. IEEE Ind. Electron. Soc. (IECON) (2018) 1471 (DOI: 10.1109\/IECON.2018.8591802).","DOI":"10.1109\/IECON.2018.8591802"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] Z. Wang, <i>et al.<\/i>: \u201cA fast overcurrent protection scheme for IGBT modules through dynamic fault current evaluation,\u201d 28th Annu. IEEE Appl. Power Electron. Conf. Expo. (APEC) (2013) 577 (DOI: 10.1109\/APEC.2013.6520268).","DOI":"10.1109\/APEC.2013.6520268"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] P.V. Pol, <i>et al.<\/i>: \u201cA simple and versatile overcurrent protection circuit for power MOSFETs,\u201d Int. J. Electron. <b>106<\/b> (2019) 1864 (DOI: 10.1080\/00207217.2019.1625973).","DOI":"10.1080\/00207217.2019.1625973"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] H. Zhang, <i>et al.<\/i>: \u201cGate driver IC with fully integrated overcurrent protection function by measuring gate-to-emitter voltage during IGBT conduction,\u201d Proc. Int. Symp. Power Semicond. Devices ICs (ISPSD) (2023) 76 (DOI: 10.1109\/ISPSD57135.2023.10147568).","DOI":"10.1109\/ISPSD57135.2023.10147568"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] T. Salomon, <i>et al.<\/i>: \u201cAnalysis of requirements for a modern PWM controller IC for space applications,\u201d European Space Power Conf. (ESPC) (2019) 1 (DOI: 10.1109\/ESPC.2019.8932018).","DOI":"10.1109\/ESPC.2019.8932018"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] J. Zhu, <i>et al.<\/i>: \u201cStudy and implementation of 600-V high-voltage gate driver IC with the common-mode dual-interlock technique for GaN devices,\u201d IEEE Trans. Ind. Electron. <b>68<\/b> (2021) 1506 (DOI: 10.1109\/TIE.2020.2970673).","DOI":"10.1109\/TIE.2020.2970673"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] Q. Hua, <i>et al.<\/i>: \u201cA rugged 650\u2006V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications,\u201d Int. J. Electron. <b>102<\/b> (2014) 755 (DOI: 10.1080\/00207217.2014.938254).","DOI":"10.1080\/00207217.2014.938254"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] Q. Hua, <i>et al.<\/i>: \u201c600\u2006V 30\u2006A SiC IPM with low power loss for motor drive applications,\u201d IEICE Trans. Electron. <b>E100-C<\/b> (2017) 938 (DOI: 10.1587\/transele.E100.C.938).","DOI":"10.1587\/transele.E100.C.938"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] J. Lehmann, <i>et al.<\/i>: \u201cHigh-voltage fully integrated gate driver IC with galvanic isolation based on embedded coreless transformers,\u201d Proc. Int. Symp. Power Semicond. Devices ICs (ISPSD) (2022) 25 (DOI: 10.1109\/ISPSD49238.2022.9813619).","DOI":"10.1109\/ISPSD49238.2022.9813619"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] A.A. Antonov, <i>et al.<\/i>: \u201cDual 4-A high-speed low-side gate driver IC for GaN and Si MOSFETs and IGBTs,\u201d IEEE 23rd Int. Conf. Young Prof. Electron Devices Mater. (EDM) (2022) 378 (DOI: 10.1109\/EDM55285.2022.9855048).","DOI":"10.1109\/EDM55285.2022.9855048"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] J. Oh, <i>et al.<\/i>: \u201cHigh performance of PMSM driver IC integrated sensorless and current sensing circuits,\u201d Proc. Int. Symp. Power Semicond. Devices ICs (ISPSD) (2016) 251 (DOI: 10.1109\/ISPSD.2016.7520825).","DOI":"10.1109\/ISPSD.2016.7520825"},{"key":"32","doi-asserted-by":"crossref","unstructured":"[32] M. Rossberg, <i>et al.<\/i>: \u201c600\u2006V SOI gate driver IC with advanced level shifter concepts for medium and high power applications,\u201d European Conf. Power Electron. Appl. 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