{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T15:28:12Z","timestamp":1773761292138,"version":"3.50.1"},"reference-count":31,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"9","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2025,5,10]]},"DOI":"10.1587\/elex.22.20250116","type":"journal-article","created":{"date-parts":[[2025,3,27]],"date-time":"2025-03-27T22:08:16Z","timestamp":1743113296000},"page":"20250116-20250116","source":"Crossref","is-referenced-by-count":1,"title":["A low-power bandgap-free LDO circuit with wide input range"],"prefix":"10.1587","volume":"22","author":[{"given":"Jie","family":"Pan","sequence":"first","affiliation":[{"name":"Beijing Smart-chip Microelectronics Technology Co., Ltd."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chenghao","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yidong","family":"Yuan","sequence":"additional","affiliation":[{"name":"Beijing Smart-chip Microelectronics Technology Co., Ltd."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yi","family":"Hu","sequence":"additional","affiliation":[{"name":"Beijing Smart-chip Microelectronics Technology Co., Ltd."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongwei","family":"Shen","sequence":"additional","affiliation":[{"name":"Beijing Smart-chip Microelectronics Technology Co., Ltd."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zekun","family":"Zhou","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] H. Akhamal and M. Chakir: \u201cA 90\u2006nm CMOS LDO regulator with high load regulation using a gain boost-up technique,\u201d Multimedia Computing and Systems (ICMCS) (2016) 7905612 (DOI: 10.1109\/icmcs.2016.7905612).","DOI":"10.1109\/ICMCS.2016.7905612"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] S. Huang and Q. Duan: \u201cA 300-mA load CMOS low-dropout regulator without an externalcapacitor for SoC and embedded applications,\u201d Circuit Theory and Applications <b>45<\/b> (2017) 2281 (DOI: 10.1002\/cta.2356).","DOI":"10.1002\/cta.2356"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] S. Ji, <i>et al<\/i>.: \u201cHigh-frequency high power density 3-D integrated gallium-nitride-based point of load module design,\u201d IEEE Trans. Power Electron. <b>28<\/b> (2013) 4216 (DOI: 10.1109\/tpel.2012.2235859).","DOI":"10.1109\/TPEL.2012.2235859"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] S.M. Ahsanuzzaman, <i>et al<\/i>.: \u201cAn integrated high density power management solution for portable applications based on a multioutput switched-capacitor circuit,\u201d IEEE Trans. Power Electron. <b>31<\/b> (2016) 4305 (DOI: 10.1109\/tpel.2015.2474738).","DOI":"10.1109\/TPEL.2015.2474738"},{"key":"5","unstructured":"[5] J. Mei and H. Zhang: \u201cLow-dropout regulator without resistance,\u201d Record of Joint Conference of Electrical and Electronics Engineers in Kyushu <b>2014<\/b> (2014) 02-1A-07 (in Japanese) (DOI: 10.11527\/jceeek.2014.0_17)."},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] Y. Okuma, <i>et al<\/i>.: \u201c0.5-V input digital low-dropout regulator (LDO) with 98.7% current efficiency in 65\u2006nm CMOS,\u201d IEICE Trans. Electron. <b>E94-C<\/b> (2011) 938 (DOI: 10.1587\/transele.e94.c.938).","DOI":"10.1587\/transele.E94.C.938"},{"key":"7","unstructured":"[7] K. Nomata and T. Kohama: \u201cStability of the LDO regulator,\u201d Record of Joint Conference of Electrical and Electronics Engineers in Kyushu <b>2010<\/b> (2010) 10-1A-06."},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] K. Mii, <i>et al<\/i>.: \u201cUltra-low quiescent current LDO with FVF-based load transient enhanced circuit,\u201d IEICE Trans. Electron. <b>E103-C<\/b> (2020) 466 (DOI: 10.1587\/transele.2019ctp0001).","DOI":"10.1587\/transele.2019CTP0001"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] S. Han, <i>et al<\/i>.: \u201cA low noise CMOS low dropout regulator with an area-efficient bandgap reference,\u201d IEICE Trans. Electron. <b>E92-C<\/b> (2009) 740 (DOI: 10.1587\/transele.e92.c.740).","DOI":"10.1587\/transele.E92.C.740"},{"key":"10","unstructured":"[10] K. Koga and T. Kohama: \u201cStability improvement of LDO regulator,\u201d Record of Joint Conference of Electrical and Electronics Engineers in Kyushu <b>2011<\/b> (2011) 09-2P-10 (DOI: 10.11527\/jceeek.2011.0_585)."},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] A. Maity and A. Patra: \u201cA single-stage low-dropout regulator with a wide dynamic range for generic applications,\u201d IEEE Trans. Very Large Scale Integr. (VLSI) Syst. <b>24<\/b> (2016) 2117 (DOI: 10.1109\/tvlsi.2015.2503048).","DOI":"10.1109\/TVLSI.2015.2503048"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] S.S. Chong, <i>et al<\/i>.: \u201cA 4.7\u2006<i>\u03bc<\/i>A quiescent current, 450\u2006mA CMOS low-dropout regulator with fast transient response,\u201d IEICE Trans. Electron. <b>E94-C<\/b> (2011) 1271 (DOI: 10.1587\/transele.e94.c.1271).","DOI":"10.1587\/transele.E94.C.1271"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] X. Qu, <i>et al<\/i>.: \u201cA low-power on-chip LDO with advanced reference buffer,\u201d IEICE Electron. Express <b>11<\/b> (2014) 20140824 (DOI: 10.1587\/elex.11.20140824).","DOI":"10.1587\/elex.11.20140824"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] H.-I Pan and C.-L. Chen: \u201cA 0.18\u2006<i>\u03bc<\/i>m stability-enhanced CMOS LDO with robust compensation scheme,\u201d IEICE Trans. Electron. <b>E92-C<\/b> (2009) 1080 (DOI: 10.1587\/transele.e92.c.1080).","DOI":"10.1587\/transele.E92.C.1080"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] S. Huang, <i>et al<\/i>.: \u201cA high efficiency adaptively biased LDO with frequency modulated charge pump for NMOS output stage,\u201d IEICE Electron. Express <b>21<\/b> (2024) 20240493 (DOI: 10.1587\/elex.21.20240493).","DOI":"10.1587\/elex.21.20240493"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] K.S. Wook and Y.S. Koo: \u201cDesign of capless LDO regulator with low voltage application based ESD protection circuit using SR-latch switch structure,\u201d IEICE Electron. Express <b>19<\/b> (2022) 20220221 (DOI: 10.1587\/elex.19.20220221).","DOI":"10.1587\/elex.19.20220221"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] S. Liu, <i>et al<\/i>.: \u201cDesign of self-referenced wide input voltage range LDO using enhanced current mirror buffer and improved lead compensation,\u201d IEICE Electron. Express <b>17<\/b> (2020) 20200120 (DOI: 10.1587\/elex.17.20200120).","DOI":"10.1587\/elex.17.20200120"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] K.S. Wook and Y.S. Koo: \u201cDesign of high-reliability LDO regulator with SCR based ESD protection circuit using body technique and load transient detection,\u201d IEICE Electron. Express <b>19<\/b> (2022) 20220110 (DOI: 10.1587\/elex.19.20220110).","DOI":"10.1587\/elex.19.20220110"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] B. Song, <i>et al<\/i>.: \u201cA 1.14-fs FOM off-chip capless LDO with fast transient response for low-power IoT devices,\u201d IEICE Electron. Express <b>22<\/b> (2025) 20240611 (DOI: 10.1587\/elex.21.20240611).","DOI":"10.1587\/elex.21.20240611"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] M. Gao, <i>et al<\/i>.: \u201cA wide input range, external capacitor-less LDO with fast transient response,\u201d IEICE Electron. Express <b>20<\/b> (2023) 20230008 (DOI: 10.1587\/elex.20.20230008).","DOI":"10.1587\/elex.20.20230008"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] S. Yang, <i>et al<\/i>.: \u201cA 12 -82\u2006dB PSR LDO with PSR enhance technique and dynamic compensation technique,\u201d IEICE Electron. Express <b>22<\/b> (2025) 20240723 (DOI: 10.1587\/elex.21.20240723).","DOI":"10.1587\/elex.21.20240723"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] Y. Xie, <i>et al<\/i>.: \u201cAn integrated capacitor-less LDO with transient and stability enhancement,\u201d IEICE Electron. Express <b>21<\/b> (2024) 20240199 (DOI: 10.1587\/elex.21.20240199).","DOI":"10.1587\/elex.21.20240199"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] X. Qu, <i>et al<\/i>.: \u201cA low-power on-chip LDO with advanced reference buffer,\u201d IEICE Electron. Express <b>11<\/b> (2014) 20140824 (DOI: 10.1587\/elex.11.20140824).","DOI":"10.1587\/elex.11.20140824"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] W.-Y. Hsu, <i>et al<\/i>.: \u201cA 0-to-35\u2006mA NMOS capacitor-less LDO with dual-loop regulation achieving 3\u2006ns response time and 1\u2006pF-to-10\u2006nF loading range,\u201d IEEE 49th European Solid State Circuits Conference (ESSCIRC) (2023) 253 (DOI: 10.1109\/esscirc59616.2023.10268699).","DOI":"10.1109\/ESSCIRC59616.2023.10268699"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] Q. Wu, <i>et al<\/i>.: \u201cDesign of wide input voltage range and low quiescent current LDO,\u201d IEICE Electron. Express <b>21<\/b> (2024) 20240328 (DOI: 10.1587\/elex.21.20240328).","DOI":"10.1587\/elex.21.20240328"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] J. Yin, <i>et al<\/i>.: \u201cAn 800\u2006mA load current LDO with wide input voltage range,\u201d 2017 International Conference on Circuits, Devices and Systems (ICCDS) (2017) 174 (DOI: 10.1109\/ICCDS.2017.8120473).","DOI":"10.1109\/ICCDS.2017.8120473"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] Z. Zhou, <i>et al<\/i>.: \u201cA bandgap reference using a novel soft self-start bias circuit,\u201d 2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) (2018) 484 (DOI: 10.1109\/APCCAS.2018.8605671).","DOI":"10.1109\/APCCAS.2018.8605671"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] J. Yin, <i>et al<\/i>.: \u201cAn 800\u2006mA load current LDO with wide input voltage range,\u201d 2017 International Conference on Circuits, Devices and Systems (ICCDS) (2017) 174 (DOI: 10.1109\/ICCDS.2017.8120473).","DOI":"10.1109\/ICCDS.2017.8120473"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] Y. Lu, <i>et al<\/i>.: \u201cA fully-integrated low-dropout regulator with full-spectrum power supply rejection,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers <b>62<\/b> (2015) 707 (DOI: 10.1109\/TCSI.2014.2380644).","DOI":"10.1109\/TCSI.2014.2380644"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] F. Lavalle-Aviles, <i>et al<\/i>.: \u201cA high power supply rejection and fast settling time capacitor-less LDO,\u201d IEEE Trans. Power Electron. <b>34<\/b> (2019) 474 (DOI: 10.1109\/TPEL.2018.2826922).","DOI":"10.1109\/TPEL.2018.2826922"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] G. Cai, <i>et al<\/i>.: \u201cA fully integrated FVF LDO with enhanced full-spectrum power supply rejection,\u201d IEEE Trans. Power Electron. <b>36<\/b> (2021) 4326 (DOI: 10.1109\/TPEL.2020.3024595).","DOI":"10.1109\/TPEL.2020.3024595"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/9\/22_22.20250116\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,10]],"date-time":"2025-05-10T03:53:11Z","timestamp":1746849191000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/9\/22_22.20250116\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,10]]},"references-count":31,"journal-issue":{"issue":"9","published-print":{"date-parts":[[2025]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.22.20250116","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,5,10]]},"article-number":"22.20250116"}}