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Wang, <i>et al<\/i>.: \u201cInvestigation of deformation fluctuation of IGBT chips under switching conditions using the dynamic field reconstruction method,\u201d IEEE Trans. Power Electron. <b>38<\/b> (2023) 2516 (DOI: 10.1109\/TPEL.2022.3214807).","DOI":"10.1109\/TPEL.2022.3214807"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] J.O. Gonzalez, <i>et al<\/i>.: \u201cPerformance and reliability review of 650\u2006V and 900\u2006V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs,\u201d IEEE Trans. Ind. Electron. <b>67<\/b> (2020) 7375 (DOI: 10.1109\/TIE.2019.2945299).","DOI":"10.1109\/TIE.2019.2945299"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] A. Abuelnaga, <i>et al<\/i>.: \u201cA review on IGBT module failure modes and lifetime testing,\u201d IEEE Access <b>9<\/b> (2021) 9643 (DOI: 10.1109\/ACCESS.2021.3049738).","DOI":"10.1109\/ACCESS.2021.3049738"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] Y. 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