{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T18:42:39Z","timestamp":1754160159088,"version":"3.41.2"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"14","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2025,7,25]]},"DOI":"10.1587\/elex.22.20250269","type":"journal-article","created":{"date-parts":[[2025,6,5]],"date-time":"2025-06-05T18:07:42Z","timestamp":1749146862000},"page":"20250269-20250269","source":"Crossref","is-referenced-by-count":0,"title":["SiC MOSFET &lt;i&gt;&lt;b&gt;V&lt;\/b&gt;&lt;sub&gt;th&lt;\/sub&gt;&lt;\/i&gt; sampling circuit design based on JEP183A"],"prefix":"10.1587","volume":"22","author":[{"given":"Tianyang","family":"Wang","sequence":"first","affiliation":[{"name":"School of Automotive Engineering, Harbin Institute of Technology"}]},{"given":"Qi","family":"Li","sequence":"additional","affiliation":[{"name":"School of Automotive Engineering, Harbin Institute of Technology"}]},{"given":"Dafang","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Automotive Engineering, Harbin Institute of Technology"},{"name":"Qingdao Research Institute of Harbin Institute of Technology (Weihai)"}]},{"given":"Bao","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Automotive Engineering, Harbin Institute of Technology"}]},{"given":"Jinhuan","family":"Zhao","sequence":"additional","affiliation":[{"name":"School of Automotive Engineering, Harbin Institute of Technology"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] X. Jiang, <i>et al<\/i>.: \u201cOnline junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction,\u201d IEEE Trans. Power Electron. <b>36<\/b> (2021) 3757 (DOI: 10.1109\/TPEL.2020.3022390).","DOI":"10.1109\/TPEL.2020.3022390"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] A. Griffo, <i>et al<\/i>.: \u201cReal-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs,\u201d IEEE Trans. Ind. Electron. <b>65<\/b> (2018) 2663 (DOI: 10.1109\/TIE.2017.2739687).","DOI":"10.1109\/TIE.2017.2739687"},{"key":"3","unstructured":"[3] B. Yao, <i>et al<\/i>.: \u201cResearch on influence of drain-source voltage on accurate measurement of SiC MOSFET threshold voltage,\u201d J. Power Supply <b>22<\/b> (2024) 258 (DOI: 10.13234\/j.issn.2095-2805.2024.3.258)."},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] H. Yu, <i>et al<\/i>.: \u201cA novel real-time junction temperature monitoring circuit for SiC MOSFET,\u201d 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (2020) 2605 (DOI: 10.1109\/APEC39645.2020.9124486).","DOI":"10.1109\/APEC39645.2020.9124486"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] H.P. Fu, <i>et al<\/i>.: \u201cAnalysis and modeling for MOSFET degradation under RF stress,\u201d IEICE Electron. Express <b>18<\/b> (2021) 20210116 (DOI: 10.1587\/elex.18.20210116).","DOI":"10.1587\/elex.18.20210116"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] H. Ren, <i>et al<\/i>.: \u201cLifetime prediction of power MOSFET based on LSTM with successive variational mode decomposition and error compensation,\u201d IEICE Electron. Express <b>20<\/b> (2023) 20230277 (DOI: 10.1587\/elex.20.20230277).","DOI":"10.1587\/elex.20.20230277"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] K. Ma, <i>et al<\/i>.: \u201cAdvanced motor driving circuit with improved transfer efficiency based on adaptive segmented control,\u201d IEICE Electron. Express <b>18<\/b> (2021) 20200407 (DOI: 10.1587\/elex.17.20200407).","DOI":"10.1587\/elex.17.20200407"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] P. Jiang, <i>et al<\/i>.: \u201cAccurate current measurement method in high frequency hybrid switch test and application,\u201d IEICE Electron. Express <b>21<\/b> (2024) 20240058 (DOI: 10.1587\/elex.21.20240058).","DOI":"10.1587\/elex.21.20240058"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] Y.D. Yuan, <i>et al<\/i>.: \u201cReverse voltage protection circuits for power MOSFETs in low dropout power applications,\u201d IEICE Electron. Express <b>19<\/b> (2022) 20220347 (DOI: 10.1587\/elex.19.20220347).","DOI":"10.1587\/elex.19.20220347"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] D. 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Zhang: \u201cA novel on-line method for monitoring the junction temperature of SiC MOSFET based on threshold voltage,\u201d Proc. CSEE <b>40<\/b> (2020) 5742 (DOI: 10.13334\/j.0258-8013.pcsee.200609)."},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] T. Funaki, <i>et al<\/i>.: \u201cCharacterization of SiC power module for high switching frequency operation,\u201d IEICE Electron. Express <b>7<\/b> (2010) 1008 (DOI: 10.1587\/elex.7.1008).","DOI":"10.1587\/elex.7.1008"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] T. Liu, <i>et al<\/i>.: \u201cA short circuit protection circuit for SiC MOSFET with self-adjustive blanking time,\u201d IEICE Electron. Express <b>21<\/b> (2021) 20210345 (DOI: 10.1587\/elex.18.20210345).","DOI":"10.1587\/elex.18.20210345"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] K. Nagaoka, <i>et al<\/i>.: \u201cHigh-speed gate drive circuit for SiC MOSFET by GaN HEMT,\u201d IEICE Electron. Express <b>11<\/b> (2015) 20150285 (DOI: 10.1587\/elex.12.20150285).","DOI":"10.1587\/elex.12.20150285"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] S. Fukunaga, <i>et al<\/i>.: \u201cAn experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD,\u201d IEICE Electron. Express <b>17<\/b> (2019) 20190392 (DOI: 10.1587\/elex.16.20190392).","DOI":"10.1587\/elex.16.20190392"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] T. Funaki: \u201cComparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs,\u201d IEICE Electronics Express <b>10<\/b> (2013) 20130744 (DOI: 10.1587\/elex.10.20130744).","DOI":"10.1587\/elex.10.20130744"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] A. Yao, <i>et al<\/i>.: \u201cHigh-speed switching operation for a SiC CMOS and power module,\u201d IEICE Electron. Express <b>18<\/b> (2021) 20210234 (DOI: 10.1587\/elex.18.20210234).","DOI":"10.1587\/elex.18.20210234"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] T. Funaki, <i>et al<\/i>.: \u201cComparative study of the static and switching characteristics of SiC and Si MOSFETs,\u201d IEICE Electron. Express <b>8<\/b> (2011) 1215 (DOI: 10.1587\/elex.8.1215).","DOI":"10.1587\/elex.8.1215"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] N. Phankong, <i>et al<\/i>.: \u201cCharacterization of the gate-voltage dependency of input capacitance in a SiC MOSFET,\u201d IEICE Electron. Express <b>7<\/b> (2010) 480 (DOI: 10.1587\/elex.7.480).","DOI":"10.1587\/elex.7.480"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] C. 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Gui, <i>et al<\/i>.: \u201cResearch on threshold voltage testing technology of SiC MOSFET,\u201d Environmental Testing <b>41<\/b> (2023) 123."},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] R. Wang and X. Zhu: \u201cAn online junction temperature detection circuit for SiC MOSFETs considering threshold voltage drift compensation,\u201d Microelectronics Reliability <b>163<\/b> (2024) 115548 (DOI: 10.1016\/j.microrel.2024.115548).","DOI":"10.1016\/j.microrel.2024.115548"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] Y. Chen, <i>et al<\/i>.: \u201cInvestigation of threshold voltage instability of SiC MOSFETs under different gate voltage sequences,\u201d IEEE Trans. Electron Devices <b>71<\/b> (2024) 2536 (DOI: 10.1109\/TED.2024.3365776).","DOI":"10.1109\/TED.2024.3365776"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/14\/22_22.20250269\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,26]],"date-time":"2025-07-26T04:01:38Z","timestamp":1753502498000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/14\/22_22.20250269\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,7,25]]},"references-count":30,"journal-issue":{"issue":"14","published-print":{"date-parts":[[2025]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.22.20250269","relation":{},"ISSN":["1349-2543"],"issn-type":[{"type":"electronic","value":"1349-2543"}],"subject":[],"published":{"date-parts":[[2025,7,25]]},"article-number":"22.20250269"}}