{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,12]],"date-time":"2026-03-12T17:59:45Z","timestamp":1773338385157,"version":"3.50.1"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"14","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2025,7,25]]},"DOI":"10.1587\/elex.22.20250280","type":"journal-article","created":{"date-parts":[[2025,5,29]],"date-time":"2025-05-29T18:07:23Z","timestamp":1748542043000},"page":"20250280-20250280","source":"Crossref","is-referenced-by-count":1,"title":["A prediction method for gate degradation of SiC MOSFETs based on on-state resistance variation"],"prefix":"10.1587","volume":"22","author":[{"given":"Peng","family":"Wang","sequence":"first","affiliation":[{"name":"Dept. of Electrical Engineering, Hebei University of Technology"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhigang","family":"Zhao","sequence":"additional","affiliation":[{"name":"Dept. of Electrical Engineering, Hebei University of Technology"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] X. Jiang, <i>et al<\/i>.: \u201cOnline junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction,\u201d IEEE Trans. Power Electron. <b>36<\/b> (2021) 3757 (DOI: 10.1109\/tpel.2020.3022390).","DOI":"10.1109\/TPEL.2020.3022390"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] S. Yang, <i>et al<\/i>.: \u201cAn industry-based survey of reliability in power electronic converters,\u201d IEEE Trans. Ind. Appl. <b>47<\/b> (2011) 1441 (DOI: 10.1109\/tia.2011.2124436).","DOI":"10.1109\/TIA.2011.2124436"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] J. Wei, <i>et al<\/i>.: \u201cReview on the reliability mechanisms of SiC power MOSFETs: a comparison between planar-gate and trench-gate structures,\u201d IEEE Trans. Power Electron. <b>38<\/b> (2023) 8990 (DOI: 10.1109\/tpel.2023.3265864).","DOI":"10.1109\/TPEL.2023.3265864"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] J. Wang and X. Jiang: \u201cReview and analysis of SiC MOSFETs\u2019 ruggedness and reliability,\u201d IET Power Electronics. <b>13<\/b> (2020) 445 (DOI: 10.1049\/iet-pel.2019.0587).","DOI":"10.1049\/iet-pel.2019.0587"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] M. Gurfinkel, <i>et al<\/i>.: \u201cTime-dependent dielectric breakdown of 4HSiC\/SiO2 MOS capacitors,\u201d IEEE Trans. Device Mater. Rel. <b>8<\/b> (2008) 635 (DOI: 10.1109\/tdmr.2008.2001182).","DOI":"10.1109\/TDMR.2008.2001182"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] A. Fayyaz, <i>et al<\/i>.: \u201cHigh temperature pulsed-gate robustness testing of SiC power MOSFETs,\u201d Microelectron. Reliab. <b>55<\/b> (2015) 1724 (DOI: 10.1016\/j.microrel.2015.06.141).","DOI":"10.1016\/j.microrel.2015.06.141"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] C. Miccoli, <i>et al<\/i>.: \u201cStudy of oxide trapping in SiC MOSFETs by means of TCAD simulations,\u201d Mater. Sci. Semiconduct. Process. <b>97<\/b> (2019) 40 (DOI: 10.1016\/j.mssp.2019.02.035).","DOI":"10.1016\/j.mssp.2019.02.035"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] K. Sato, <i>et al<\/i>.: \u201cPrediction of DC-AC converter efficiency degradation due to device aging using a compact MOSFET-aging model,\u201d IEICE Trans. Electron. <b>E103-C<\/b> (2019) 119 (DOI: 10.1587\/transele.2019ECP5010).","DOI":"10.1587\/transele.2019ECP5010"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] S. Fukunaga, <i>et al<\/i>.: \u201cEvaluation of electrical model parameter changes in SiC power MOSFETs during power cycling test,\u201d IEICE Trans. Electron. <b>13<\/b> (2024) 731 (DOI: 10.1541\/ieejjia.24004453).","DOI":"10.1541\/ieejjia.24004453"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] S. Pu, <i>et al<\/i>.: \u201cIn situ degradation monitoring of SiC MOSFET based on switching transient measurement,\u201d IEEE Trans. Ind. Appl. <b>67<\/b> (2020) 5092 (DOI: 10.1109\/tie.2019.2924600).","DOI":"10.1109\/TIE.2019.2924600"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] Z. Zhang, <i>et al<\/i>.: \u201cAn online correction method for inaccuracy of junction temperature monitoring caused by degradation of SiC MOSFETs,\u201d IEEE J. Emerg. Sel. Topics Power Electron. <b>12<\/b> (2024) 5511 (DOI: 10.1109\/jestpe.2024.3402225).","DOI":"10.1109\/JESTPE.2024.3402225"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] X. Zhong, <i>et al<\/i>.: \u201cBias temperature instability of silicon carbide power MOSFET under AC gate stresses,\u201d IEEE Trans. Power Electron. <b>37<\/b> (2022) 1998 (DOI: 10.1109\/tpel.2021.3105272).","DOI":"10.1109\/TPEL.2021.3105272"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] J. Kang, <i>et al<\/i>.: \u201cAn online gate oxide degradation monitoring method for SiC MOSFETs with contactless PCB Rogowski coil approach,\u201d IEEE Trans. Power Electron. <b>38<\/b> (2023) 9673 (DOI: 10.1109\/tpel.2023.3270820).","DOI":"10.1109\/TPEL.2023.3270820"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] A. Moazami, <i>et al<\/i>.: \u201cAn online condition monitoring method for IGBT gate oxide degradation based on the gate current in miller plateau,\u201d IEEE Trans. Ind. Electron. <b>70<\/b> (2022) 9505 (DOI: 10.1109\/tie.2022.3210581).","DOI":"10.1109\/TIE.2022.3210581"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] X. Ye, <i>et al<\/i>.: \u201cOnline condition monitoring of power MOSFET gate oxide degradation based on miller platform voltage,\u201d IEEE Trans. Power Electron. <b>32<\/b> (2017) 4776 (DOI: 10.1109\/tpel.2016.2602323).","DOI":"10.1109\/TPEL.2016.2602323"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] M. Farhadi, <i>et al<\/i>.: \u201cTemperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances,\u201d IEEE Trans. Power Electron. <b>36<\/b> (2021) 8308 (DOI: 10.1109\/tpel.2021.3049394).","DOI":"10.1109\/TPEL.2021.3049394"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] S. Hayashi and K. Wada: \u201cOperational verification of gate drive circuit with condition monitoring function for gate oxide degradation of SiC MOSFETs,\u201d IEEE Open J. Power Electron. <b>5<\/b> (2024) 709 (DOI: 10.1109\/ojpel.2024.3396839).","DOI":"10.1109\/OJPEL.2024.3396839"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] S. Hayashi and K. Wada: \u201cGate drive circuit with input capacitance ciss measurement function for the condition monitoring of power devices,\u201d IEEJ Trans. Ind. Appl. <b>142<\/b> (2022) 471 (DOI: 10.1541\/ieejias.142.471).","DOI":"10.1541\/ieejias.142.471"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] U. Karki, <i>et al<\/i>.: \u201cEffect of gate-oxide degradation on electrical parameters of silicon carbide MOSFETs,\u201d IEEE Trans. Electron Devices <b>67<\/b> (2020) 2544 (DOI: 10.1109\/ted.2020.2990128).","DOI":"10.1109\/TED.2020.2990128"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] J. Liu, <i>et al<\/i>.: \u201cAn online gate oxide degradation monitoring method for SiC mosfets based on turn-on gate voltage filtering,\u201d IEEE Trans. Power Electron. <b>39<\/b> (2024) 5020 (DOI: 10.1109\/tpel.2024.3363421).","DOI":"10.1109\/TPEL.2024.3363421"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] F. Yang, <i>et al<\/i>.: \u201cTurn-on delay based real-time junction temperature measurement for SiC MOSFETs with aging compensation,\u201d IEEE Trans. Power Electron. <b>36<\/b> (2021) 1280 (DOI: 10.1109\/tpel.2020.3009202).","DOI":"10.1109\/TPEL.2020.3009202"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] U. Karki, <i>et al<\/i>.: \u201cEffect of gate-oxide degradation on electrical parameters of power MOSFETs,\u201d IEEE Trans. Power Electron. <b>33<\/b> (2018) 10764 (DOI: 10.1109\/tpel.2018.2801848).","DOI":"10.1109\/TPEL.2018.2801848"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] Z. Chen, <i>et al<\/i>.: \u201cCryogenic and high temperature performance of 4H-SiC power MOSFETs,\u201d APEC.28th IEEE Appl. Power Electron. Conf. and Expo. (2013) 207 (DOI: 10.1109\/apec.2013.6520209).","DOI":"10.1109\/APEC.2013.6520209"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] T. Kimoto and J.A. Cooper: <i>Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications<\/i> (John Wiley &amp; Sons, 2014) 2nd ed. 314 (DOI: 10.1002\/9781118313534).","DOI":"10.1002\/9781118313534"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] S.L. Rumyantsev, <i>et al<\/i>.: \u201cChannel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures,\u201d Semicond. Sci. Technol. <b>24<\/b> (2009) 075001 (DOI: 10.1088\/0268-1242\/24\/7\/075011).","DOI":"10.1088\/0268-1242\/24\/7\/075011"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] G.C. Patil, <i>et al<\/i>.: \u201cA simple analytical model of 4H-SiC MOSFET for high temperature circuit simulations,\u201d Annual IEEE India Conf. (INDICON) (2014) 1 (DOI: 10.1109\/indicon.2014.7030554).","DOI":"10.1109\/INDICON.2014.7030554"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] W. Zhou, <i>et al<\/i>.: \u201cHigh temperature stability and the performance degradation of SiC MOSFETs,\u201d IEEE Trans. Power Electron. <b>29<\/b> (2014) 2329 (DOI: 10.1109\/tpel.2013.2283509).","DOI":"10.1109\/TPEL.2013.2283509"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] J. Kang, <i>et al<\/i>.: \u201cInvestigation of off-state stress induced degradation of SiC MOSFETs under short-circuit condition,\u201d IEEE Trans. Ind. Electron. <b>70<\/b> (2022) 5224 (DOI: 10.1109\/tie.2022.3189071).","DOI":"10.1109\/TIE.2022.3189071"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] N. Stojadinovic, <i>et al<\/i>.: \u201cElectrical stressing effects in commercial power VDMOSFETs,\u201d IEE Proc. Circuits Devices Syst. <b>153<\/b> (2006) 281 (DOI: 10.10495\/ip-cds:20050050).","DOI":"10.1049\/ip-cds:20050050"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] M. Chaturvedi, <i>et al<\/i>.: \u201cComparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps,\u201d IEEE Electron Devices <b>69<\/b> (2022) 6225 (DOI: 10.1109\/ted.2022.3206184).","DOI":"10.1109\/TED.2022.3206184"}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/14\/22_22.20250280\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,26]],"date-time":"2025-07-26T04:01:53Z","timestamp":1753502513000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/22\/14\/22_22.20250280\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,7,25]]},"references-count":30,"journal-issue":{"issue":"14","published-print":{"date-parts":[[2025]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.22.20250280","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,7,25]]},"article-number":"22.20250280"}}