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Briefs <b>70<\/b> (2023) 86 (DOI: 10.1109\/TCSII.2022.3205907).","DOI":"10.1109\/TCSII.2022.3205907"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] S. Zheng, <i>et al<\/i>.: \u201cA 22.5~28.5-GHz low-amplitude-variation low-phase-error hybrid phase shifter using flatness enhancement techniques for 5G NR in 40\u2006nm CMOS,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>72<\/b> (2025) 813 (DOI: 10.1109\/TCSII.2025.3563519).","DOI":"10.1109\/TCSII.2025.3563519"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] H.-D. Chen, <i>et al<\/i>.: \u201cBroadband eight-antenna array design for sub-6\u2006GHz 5G NR bands metal-frame smartphone applications,\u201d IEEE Antennas Wireless Propag. Lett. <b>19<\/b> (2020) 1078 (DOI: 10.1109\/LAWP.2020.2988898).","DOI":"10.1109\/LAWP.2020.2988898"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] L.G. da Silva, <i>et al<\/i>.: \u201cRIS development and implementation in a mm-Waves 5G-NR system toward 6G,\u201d IEEE Wireless Commun. Lett. <b>13<\/b> (2024) 736 (DOI: 10.1109\/LWC.2023.3341301).","DOI":"10.1109\/LWC.2023.3341301"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] C.-Y.-D. Sim, <i>et al<\/i>.: \u201cWideband MIMO antenna array design for future mobile devices operating in the 5G NR frequency bands n77\/n78\/n79 and LTE band 46,\u201d IEEE Antennas Wireless Propag. Lett. <b>19<\/b> (2020) 74 (DOI: 10.1109\/LAWP.2019.2953334).","DOI":"10.1109\/LAWP.2019.2953334"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] W. Zhao and Y. Wang: \u201cA shared-branch eleven-band mobile antenna with a 0.5-mm clearance for metal-bezel mobile phones covering all the 4G LTE and 5G NR bands,\u201d IEEE Trans. Antennas Propag. <b>72<\/b> (2024) 3748 (DOI: 10.1109\/TAP.2024.3354386).","DOI":"10.1109\/TAP.2024.3354386"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] Z. Deng, <i>et al<\/i>.: \u201cA CMOS dual band low-loss high-isolation switch for 5G new radio,\u201d 2023 IEEE International Conference on Integrated Circuits Technologies and Application (2023) (DOI: 10.1109\/ICTA60488.2023.10364269).","DOI":"10.1109\/ICTA60488.2023.10364269"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] T.T.K. Nga, <i>et al<\/i>.: \u201c40\u2006dB-isolation, 1.85\u2006dB-insertion loss full CMOS SPDT switch with body-floating technique and ultra-small active matching network using on-chip solenoid inductor for BLE applications,\u201d Electronics <b>7<\/b> (2018) 297 (DOI: 10.3390\/electronics7110297).","DOI":"10.3390\/electronics7110297"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] Z. Yan, <i>et al<\/i>.: \u201cAn asymmetrical RF switch in 130\u2006nm CMOS with switchable terminal for N77 1T2R RF front end,\u201d IEICE Electron. Express <b>21<\/b> (2024) 20240532 (DOI: 10.1587\/elex.21.20240532).","DOI":"10.1587\/elex.21.20240532"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] K.K. Tokgoz, <i>et al<\/i>.: \u201cDesign of low-loss 60\u2006GHz integrated antenna switch in 65\u2006nm CMOS,\u201d IEICE Electron. Express <b>15<\/b> (2018) 20180067 (DOI: 10.1587\/elex.15.20180067).","DOI":"10.1587\/elex.15.20180067"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] A.A.S. Abdo, <i>et al<\/i>.: \u201cA low-loss high-linearity SOI SP6T antenna switch using diode biasing method,\u201d IEICE Electron. Express <b>16<\/b> (2019) 20190494 (DOI: 10.1587\/elex.16.20190494).","DOI":"10.1587\/elex.16.20190494"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] D. Wang, <i>et al<\/i>.: \u201cA 24-44\u2006GHz broadband transmit-receive front end in 0.13-<i>\u03bc<\/i>m SiGe BiCMOS for multistandard 5G applications,\u201d IEEE Trans. Microw. Theory Techn. <b>69<\/b> (2021) 3463 (DOI: 10.1109\/TMTT.2021.3069858).","DOI":"10.1109\/TMTT.2021.3069858"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] W. Lee and S. Hong: \u201cFrequency-reconfigurable SP4T switch with plaid metal transistors and forward body biasing for enhanced RON \u00d7 COFF characteristics,\u201d IEEE Trans. Circuits Syst. II, Exp. Briefs <b>69<\/b> (2022) 399 (DOI: 10.1109\/TCSII.2021.3094268).","DOI":"10.1109\/TCSII.2021.3094268"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] A. Eltaliawy and J.R. Long: \u201cA broadband, mm-Wave SPST switch with minimum 50-dB isolation in 45-nm SOI-CMOS,\u201d IEEE Trans. Microw. Theory Techn. <b>69<\/b> (2021) 2899 (DOI: 10.1109\/TMTT.2021.3066977).","DOI":"10.1109\/TMTT.2021.3066977"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] W. Lee and S. Hong: \u201cSmall-size low-loss 28-GHz body-floated CMOS DPDT switch using shared matching network,\u201d IEEE Microw. Wireless Compon. Lett. <b>28<\/b> (2018) 1113 (DOI: 10.1109\/LMWC.2018.2874501).","DOI":"10.1109\/LMWC.2018.2874501"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] T. Bordignon, <i>et al<\/i>.: \u201cEnhanced RF switch performance in RFSOI technology: achieving 74\u2006fs RON\uff65COFF and 3.3\u2006V RFVMAX on thinned SOI,\u201d 2024 IEEE European Solid-State Electronics Research Conference (ESSERC) (2024) 448 (DOI: 10.1109\/ESSERC62670.2024.10719593).","DOI":"10.1109\/ESSERC62670.2024.10719593"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] P.T. Nguyen, <i>et al<\/i>.: \u201cA DC-20-GHz impedance tuner using power-enhanced stacked-FET switch in 45-nm SOI CMOS,\u201d IEEE Microw. Wireless Technol. Lett. <b>33<\/b> (2023) 459 (DOI: 10.1109\/LMWT.2022.3220934).","DOI":"10.1109\/LMWT.2022.3220934"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] J. Lee, <i>et al<\/i>.: \u201cMillimeter-wave frequency reconfigurable dual-band CMOS power amplifier for 5G communication radios,\u201d IEEE Trans. Microw. Theory Techn. <b>70<\/b> (2022) 801 (DOI: 10.1109\/TMTT.2021.3122533).","DOI":"10.1109\/TMTT.2021.3122533"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] L. Chen, <i>et al<\/i>.: \u201cA W-band SPDT switch with 15-dBm P1dB in 55-nm bulk CMOS,\u201d IEEE Microw. Wireless Compon. Lett. <b>32<\/b> (2022) 879 (DOI: 10.1109\/LMWC.2022.3159529).","DOI":"10.1109\/LMWC.2022.3159529"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] J. Park, <i>et al<\/i>.: \u201cA small-size K-band SPDT switch using alternate CMOS structure with resonating inductor matching,\u201d IEEE Microw. Wireless Compon. Lett. <b>30<\/b> (2020) 1093 (DOI: 10.1109\/LMWC.2020.3026389).","DOI":"10.1109\/LMWC.2020.3026389"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] S. Kaleem, <i>et al<\/i>.: \u201cA high-power Ka-band single-pole single-throw switch MMIC using 0.25\u2006<i>\u03bc<\/i>m GaN on SiC,\u201d 2015 IEEE Radio and Wireless Symposium (RWS) (2015) 132 (DOI: 10.1109\/RWS.2015.7129738).","DOI":"10.1109\/RWS.2015.7129738"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] A. Biondi, <i>et al<\/i>.: \u201cA Ka-band GaN 2x4 MMIC switch for compact and scalable switch matrices,\u201d 2022 17th European Microwave Integrated Circuits Conference (EuMIC) (2022) 25 (DOI: 10.23919\/EuMIC54520.2022.9923543).","DOI":"10.23919\/EuMIC54520.2022.9923543"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] J. Chou, <i>et al<\/i>.: \u201cA Ka-band 35-dBm P0.1dB low-loss monolithic SPDT switch using anti-series diode connection,\u201d 2023 IEEE\/MTT-S International Microwave Symposium (IMS 2023) (2023) 1112 (DOI: 10.1109\/IMS37964.2023.10188064).","DOI":"10.1109\/IMS37964.2023.10188064"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] H. Im, <i>et al<\/i>.: \u201cW-band GaN HEMT switch using the state-dependent concurrent matching method,\u201d Electronics <b>12<\/b> (2023) 2236 (DOI: 10.3390\/electronics12102236).","DOI":"10.3390\/electronics12102236"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] H.-Y. Chang and C.-Y. Chan: \u201cA low loss high isolation DC-60\u2006GHz SPDT traveling-wave switch with a body bias technique in 90\u2006nm CMOS process,\u201d IEEE Microw. Wireless Compon. Lett. <b>20<\/b> (2010) 82 (DOI: 10.1109\/LMWC.2009.2038518).","DOI":"10.1109\/LMWC.2009.2038518"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] B.-W. Min and G.M. Rebeiz: \u201cKa-band low-loss and high-isolation 0.13\u2006<i>\u03bc<\/i>m CMOS SPST\/SPDT switches using high substrate resistance,\u201d 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (2007) 569 (DOI: 10.1109\/RFIC.2007.380948).","DOI":"10.1109\/RFIC.2007.380948"},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] W. Lee and S. Hong: \u201cLow-loss and small-size 28\u2006GHz CMOS SPDT switches using switched inductor,\u201d 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (2018) 148 (DOI: 10.1109\/RFIC.2018.8428974).","DOI":"10.1109\/RFIC.2018.8428974"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] B.-W. Min and G.M. Rebeiz: \u201cKa-band low-loss and high-isolation switch design in 0.13\u2006<i>\u03bc<\/i>m CMOS,\u201d IEEE Trans. Microw. Theory Techn. <b>56<\/b> (2008) 1364 (DOI: 10.1109\/TMTT.2008.921749).","DOI":"10.1109\/TMTT.2008.921749"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] C.-M. Tsao and H.-T. Hsu: \u201cAn ultra-wideband, high power and high isolation single-pole-double-throw switch using capacitive loading approach,\u201d IEEE Trans. Circuits Syst. II, Exp. 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