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Elluru, <i>et al<\/i>.: \u201cDesign of an absorptive high-power PIN diode switch for an ultra-wideband radar,\u201d IEEE J. Microw. <b>2<\/b> (2022) 286 (DOI: 10.1109\/jmw.2021.3138889).","DOI":"10.1109\/JMW.2021.3138889"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] Y. Jiang, <i>et al<\/i>.: \u201cDesign of W-band PIN diode SPDT switch with low loss,\u201d Applied Computational Electromagnetics Society <b>36<\/b> (2021) 901 (DOI: 10.47037\/2021.aces.j.360712).","DOI":"10.47037\/2021.ACES.J.360712"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] N.A. Shairi, <i>et al<\/i>.: \u201cDesign and analysis of broadband high isolation of discrete packaged PIN diode SPDT switch for wireless data communication,\u201d IEEE International RF and Microwave Conference (RFM 2011) (2011) 91 (DOI: 10.1109\/rfm.2011.6168703).","DOI":"10.1109\/RFM.2011.6168703"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] L.B. Spejo, <i>et al<\/i>.: \u201c6.5\u2006kV SiC PiN and JBS diodes\u2019 comparison in hybrid and full SiC switch topologies,\u201d Electronics <b>13<\/b> (2024) 4548 (DOI: 10.3390\/electronics13224548).","DOI":"10.3390\/electronics13224548"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] P. Sun, <i>et al<\/i>.: \u201cA novel SiGe PIN diode SPST switch for broadband T\/R module,\u201d IEEE Microw. Wireless Compon. Lett. <b>17<\/b> (2007) 352 (DOI: 10.1109\/lmwc.2007.895706).","DOI":"10.1109\/LMWC.2007.895706"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] H. Ishida and Y. Uemoto: \u201cA high-power RF switch IC using AlGaN\/GaN HFETs with single-stage configuration,\u201d IEEE Trans. Electron Devices <b>52<\/b> (2005) 1893 (DOI: 10.1109\/ted.2005.851835).","DOI":"10.1109\/TED.2005.851835"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] S. Syroiezhin, <i>et al<\/i>.: \u201cHigh-voltage MOSFET-based stacked RF switch with extended bandwidth down to DC,\u201d IEEE Solid-State Circuits Lett. <b>6<\/b> (2023) 129 (DOI: 10.1109\/lssc.2023.3268089).","DOI":"10.1109\/LSSC.2023.3268089"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] C. Wang, <i>et al<\/i>.: \u201cA nonlinear model of RF switch device based on common gate GaAs FETs,\u201d International Journal of Numerical Modelling: Electronic Networks, Devices and Fields <b>37<\/b> (2024) e3308 (DOI: 10.1002\/jnm.3308).","DOI":"10.1002\/jnm.3308"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] A. Bettidi, <i>et al<\/i>.: \u201cHigh power GaN-HEMT SPDT switches for microwave applications,\u201d International Journal of RF and Microwave Computer-Aided Engineering <b>19<\/b> (2009) 598 (DOI: 10.1002\/mmce.20383).","DOI":"10.1002\/mmce.20383"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] Z.Y. Yan, <i>et al<\/i>.: \u201cAn asymmetrical RF switch in 130\u2006nm CMOS with switchable terminal for N77 1T2R RF front end,\u201d IEICE Electron. Express <b>21<\/b> (2024) 20240532 (DOI: 10.1587\/elex.21.20240532).","DOI":"10.1587\/elex.21.20240532"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] D. Im and K. Lee: \u201cStacked-FET linear SOI CMOS SPDT antenna switch with input P1dB greater than 40\u2006dBm,\u201d IEICE Electron. Express <b>9<\/b> (2012) 1813 (DOI: 10.1587\/elex.9.1813).","DOI":"10.1587\/elex.9.1813"},{"key":"12","unstructured":"[12] X. Bu, <i>et al<\/i>.: \u201cThe design of a wide-band SP6T electromechanical coaxial switch,\u201d 2016 IEEE International Conference on Microwave and Millimeter Wave Technology Proceedings (2016) (DOI: 10.1109\/icmmt.2016.7762490)."},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] T. Zhang, <i>et al<\/i>.: \u201cA novel design of ultra-wideband SP10T electromechanical coaxial switch,\u201d 2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT) (2020) (DOI: 10.1109\/icmmt49418.2020.9386493).","DOI":"10.1109\/ICMMT49418.2020.9386493"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] N. Forcier: \u201cRF\/microwave switch considerations,\u201d IEEE AUTOTESTCON (2008) 484 (DOI: 10.1109\/autest.2008.4662664).","DOI":"10.1109\/AUTEST.2008.4662664"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] Z. Deng, <i>et al<\/i>.: \u201cNovel high isolation and high capacitance ratio RF MEMS switch: design, analysis and performance verification,\u201d Micromachines <b>13<\/b> (2022) 646 (DOI: 10.3390\/mi13050646).","DOI":"10.3390\/mi13050646"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] G.S. Kondaveeti, <i>et al<\/i>.: \u201cDesign of a novel structure capacitive RF MEMS switch to improve performance parameters,\u201d IET Circuits, Devices &amp; Systems <b>13<\/b> (2019) 1093 (DOI: 10.1049\/iet-cds.2019.0206).","DOI":"10.1049\/iet-cds.2019.0206"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] Kurmendra and R. Kumar: \u201cA review on RF micro-electro-mechanical-systems (MEMS) switch for radio frequency applications,\u201d Microsystem Technologies <b>27<\/b> (2020) 2525 (DOI: 10.1007\/s00542-020-05025-y).","DOI":"10.1007\/s00542-020-05025-y"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] Kurmendra and R. Kumar: \u201cMaterials selection approaches and fabrication methods in RF MEMS switches,\u201d Journal of Electronic Materials <b>50<\/b> (2021) 3149 (DOI: 10.1007\/s11664-021-08817-8).","DOI":"10.1007\/s11664-021-08817-8"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] D. Yamane, <i>et al<\/i>.: \u201cAn SOI bulk-micromachined dual SPDT RF-MEMS switch by layer-wise separation design of waveguide and switching mechanism,\u201d IEICE Electron. Express <b>7<\/b> (2010) 80 (DOI: 10.1587\/elex.7.80).","DOI":"10.1587\/elex.7.80"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] L.-Y. Ma, <i>et al<\/i>.: \u201cComprehensive study on RF-MEMS switches used for 5G scenario,\u201d IEEE Access <b>7<\/b> (2019) 107506 (DOI: 10.1109\/access.2019.2932800).","DOI":"10.1109\/ACCESS.2019.2932800"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] A. Tkachenko, <i>et al<\/i>.: \u201cInvestigation and research of high-performance RF MEMS switches for use in the 5G RF front-end modules,\u201d Micromachines <b>14<\/b> (2023) 477 (DOI: 10.3390\/mi14020477).","DOI":"10.3390\/mi14020477"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] Y. Xu, <i>et al<\/i>.: \u201cA novel RF MEMS switch on frequency reconfigurable antenna application,\u201d Microsystem Technologies <b>24<\/b> (2018) 3833 (DOI: 10.1007\/s00542-018-3863-9).","DOI":"10.1007\/s00542-018-3863-9"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] Y. Mafinejad, <i>et al<\/i>.: \u201cPi-shaped MEMS architecture for lowering actuation voltage of RF switching,\u201d IEICE Electron. Express <b>6<\/b> (2009) 1483 (DOI: 10.1587\/elex.6.1483).","DOI":"10.1587\/elex.6.1483"},{"key":"24","unstructured":"[24] Radiall: \u201cDatasheet of R571433141 switch.\u201d"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] R. Marani and A.G. Perri: \u201cDesign and simulation study of full adder circuit based on CNTFET and CMOS technology by ADS,\u201d ECS Journal of Solid State Science and Technology <b>7<\/b> (2018) M108 (DOI: 10.1149\/2.0281806jss).","DOI":"10.1149\/2.0281806jss"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] X. Chen and Y. Liu: <i>Finite Element Modeling and Simulation with ANSYS Workbench<\/i> (CRC Press, 2018) 2nd ed. (DOI: 10.1201\/9781351045872).","DOI":"10.1201\/9781351045872"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] S.C. Krishna, <i>et al<\/i>.: \u201cOn the prediction of strength from hardness for copper alloys,\u201d Journal of Materials <b>2013<\/b> (2013) 352578 (DOI: 10.1155\/2013\/352578).","DOI":"10.1155\/2013\/352578"},{"key":"28","doi-asserted-by":"crossref","unstructured":"[28] P.J. Rae and D.M. 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