{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,31]],"date-time":"2026-01-31T18:10:27Z","timestamp":1769883027881,"version":"3.49.0"},"reference-count":32,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"2","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Electron. Express"],"published-print":{"date-parts":[[2026,1,25]]},"DOI":"10.1587\/elex.22.20250543","type":"journal-article","created":{"date-parts":[[2025,10,26]],"date-time":"2025-10-26T22:07:38Z","timestamp":1761516458000},"page":"20250543-20250543","source":"Crossref","is-referenced-by-count":0,"title":["Study on single event burnout mechanism on the \u201cstep current\u201d of SiC schottky diodes"],"prefix":"10.1587","volume":"23","author":[{"given":"Yanan","family":"Liang","sequence":"first","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"}]},{"given":"Ziyu","family":"Wang","sequence":"additional","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"}]},{"given":"Rui","family":"Chen","sequence":"additional","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}]},{"given":"Jianwei","family":"Han","sequence":"additional","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"},{"name":"University of Chinese Academy of Sciences"}]},{"given":"Bing","family":"Liu","sequence":"additional","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"}]},{"given":"Qian","family":"Chen","sequence":"additional","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"}]},{"given":"Shipeng","family":"Shangguan","sequence":"additional","affiliation":[{"name":"National Space Science Center, Chinese Academy of Sciences"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] S. Kuboyama, <i>et al<\/i>.: \u201cAnomalous charge collection in silicon carbide Schottky barrier diodes and resulting permanent damage and single-event burnout,\u201d IEEE Trans. Nucl. Sci. <b>53<\/b> (2007) 3343 (DOI: 10.1109\/tns.2006.885165).","DOI":"10.1109\/TNS.2006.885165"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] T. Makino, <i>et al<\/i>.: \u201cHeavy-ion induced anomalous charge collection from 4H-SiC Schottky barrier diodes,\u201d IEEE Trans. Nucl. Sci. <b>60<\/b> (2013) 2647 (DOI: 10.1109\/tns.2013.2243469).","DOI":"10.1109\/TNS.2013.2243469"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] T. Makino, <i>et al<\/i>.: \u201cEpitaxial layer thickness dependence on heavy ion induced charge collection in 4H-SiC Schottky barrier diodes,\u201d Materials Science Forum <b>858<\/b> (2016) 753 (DOI: 10.4028\/www.scientific.net\/msf.858.753).","DOI":"10.4028\/www.scientific.net\/MSF.858.753"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] D. McMorrow, <i>et al<\/i>.: \u201cCharge-collection dynamics of InP-based high electron mobility transistors (HEMTs),\u201d 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. no.01TH8605) (2001) 132 (DOI: 10.1109\/RADECS.2001.1159270).","DOI":"10.1109\/RADECS.2001.1159270"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] A.F. Witulski, <i>et al<\/i>.: \u201cSingle-event burnout of SiC junction barrier Schottky diode high-voltage power devices,\u201d IEEE Trans. Nucl. Sci. <b>65<\/b> (2018) 256 (DOI: 10.1109\/tns.2017.2782227).","DOI":"10.1109\/TNS.2017.2782227"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] C. Peng, <i>et al<\/i>.: \u201cDamage mechanism of sic Schottky barrier diode irradiated by heavy ions,\u201d Acta Phys. Sin. <b>71<\/b> (2022) 176101 (DOI: 10.7498\/aps.71.20220628).","DOI":"10.7498\/aps.71.20220628"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] C. Abbate, <i>et al<\/i>.: \u201cAnalysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes,\u201d IEEE Trans. Nucl. Sci. <b>62<\/b> (2015) 202 (DOI: 10.1109\/tns.2014.2387014).","DOI":"10.1109\/TNS.2014.2387014"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] R. Li, <i>et al<\/i>.: \u201cInfluence of heavy ion irradiation and high temperature on the performance of 4H-SiC Schottky barrier particle detector,\u201d Radiation Physics and Chemistry <b>207<\/b> (2023) 110819 (DOI: 10.1016\/j.radphyschem.2023.110819).","DOI":"10.1016\/j.radphyschem.2023.110819"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] D. Mcmorrow, <i>et al<\/i>.: \u201cCharge-collection mechanisms of heterostructure FETs,\u201d IEEE Trans. Nucl. Sci. <b>41<\/b> (1994) 2055 (DOI: 10.1109\/23.340542).","DOI":"10.1109\/23.340542"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] S. DasGupta, <i>et al<\/i>.: \u201cGate bias dependence of single event charge collection in AlSb\/InAs HEMTs,\u201d IEEE Trans. Nucl. Sci. <b>57<\/b> (2010) 1856 (DOI: 10.1109\/tns.2009.2039806).","DOI":"10.1109\/TNS.2009.2039806"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] A. Albadri, <i>et al<\/i>.: \u201cCoupled electrothermal simulations of single event burnout in power diodes,\u201d IEEE Trans. Nucl. Sci. <b>52<\/b> (2006) 2194 (DOI: 10.1109\/tns.2005.860691).","DOI":"10.1109\/TNS.2005.860691"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] D.R. Ball, <i>et al<\/i>.: \u201cIon-induced energy pulse mechanism for single-event burnout in high-voltage sic power MOSFETs and junction barrier Schottky diodes,\u201d IEEE Trans. Nucl. Sci. <b>67<\/b> (2020) 22 (DOI: 10.1109\/tns.2019.2955922).","DOI":"10.1109\/TNS.2019.2955922"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] H. Zhang, <i>et al<\/i>.: \u201cSensitivity of heavy-ion-induced single event burnout in SiC MOSFET,\u201d Chinese Physics B <b>31<\/b> (2022) 018501 (DOI: 10.1088\/1674-1056\/ac051d)","DOI":"10.1088\/1674-1056\/ac051d"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] J. McPherson, <i>et al<\/i>.: \u201cSimulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: physical failure mechanism and robustness vs performance tradeoffs,\u201d Applied Physics Letters <b>120<\/b> (2022) 043501.","DOI":"10.1063\/5.0076740"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] R.C. Germanicus, <i>et al<\/i>.: \u201cFailure analysis of atmospheric neutron-induced single event burnout of a commercial SiC MOSFET,\u201d Materials Science Forum <b>1062<\/b> (2022) 544 (DOI: 10.4028\/p-973n9u).","DOI":"10.4028\/p-973n9u"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] G. Soelkner, <i>et al<\/i>.: \u201cReliability of SiC power devices against cosmic radiation-induced failure,\u201d Materials Science Forum <b>556<\/b> (2007) 851 (DOI: 10.4028\/www.scientific.net\/msf.556-557.851).","DOI":"10.4028\/www.scientific.net\/MSF.556-557.851"},{"key":"17","unstructured":"[17] C. Felgemacher, <i>et al<\/i>.: \u201cBenefits of increased cosmic radiation robustness of SiC semiconductors in large power-converters,\u201d International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2016) (2016)."},{"key":"18","doi-asserted-by":"publisher","unstructured":"[18] Y. Huang, <i>et al<\/i>.: \u201cComparative numerical analysis of the robustness of Si and sic PiN diodes against cosmic radiation-induced failure,\u201d Silicon Carbide and Related Materials 2019, Materials Science Forum <b>1004<\/b> (2020) 1088 (DOI: 10.4028\/www.scientific.net\/msf.1004.1088)","DOI":"10.4028\/www.scientific.net\/MSF.1004.1088"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] W. Kaindl, <i>et al<\/i>.: \u201cPhysically based simulation of strong charge multiplication events in power devices triggered by incident ions,\u201d 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (2004) 257 (DOI: 10.1109\/wct.2004.239974).","DOI":"10.1109\/WCT.2004.239974"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] Y. Lei, <i>et al<\/i>.: \u201cTCAD simulation research of the single event burnout and hardening in power LDMOS transistors, \u201d 5th International Conference on Circuits, Systems and Simulation (ICCSS) (2022) (DOI: 10.1109\/iccss55260.2022.9802363).","DOI":"10.1109\/ICCSS55260.2022.9802363"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] S. Shangguan, <i>et al<\/i>.: \u201cSingle event effects of sic diode demonstrated by pulsed-laser two photon absorption,\u201d Microelectronics Reliability <b>139<\/b> (2022) 114791 (DOI: 10.1016\/j.microrel.2021.114364).","DOI":"10.1016\/j.microrel.2021.114364"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] F. Darracq, <i>et al<\/i>.: \u201cInvestigation on the single event burnout sensitive volume using two-photon absorption laser testing,\u201d IEEE Trans. Nucl. Sci. <b>59<\/b> (2012) 999 (DOI: 10.1109\/tns.2012.2192449).","DOI":"10.1109\/TNS.2012.2192449"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] R.A. Johnson, <i>et al<\/i>.: \u201cEnhanced charge collection in SiC power MOSFETs demonstrated by pulse-laser two-photon absorption see experiments,\u201d IEEE Trans. Nucl. Sci. <b>66<\/b> (2019) 1694 (DOI: 10.1109\/tns.2019.2922883).","DOI":"10.1109\/TNS.2019.2922883"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] S. Shangguan, <i>et al<\/i>.: \u201cDisplacement damage and single event effects of SiC diodes and MOSFETs by neutron, heavy ions and pulsed laser,\u201d Microelectronics Reliability <b>139<\/b> (2022) 114791 (DOI: 10.1016\/j.microrel.2022.114791).","DOI":"10.1016\/j.microrel.2022.114791"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] C. Martinella, <i>et al<\/i>.: \u201cHeavy-ion induced single event effects and latent damages in SiC power MOSFETs,\u201d Microelectronics Reliability <b>128<\/b> (2022) 114423 (DOI: 10.1016\/j.microrel.2021.114423).","DOI":"10.1016\/j.microrel.2021.114423"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] L. Shu, <i>et al<\/i>.: \u201cObservation of single event burnout (SEB) in a SOI NLDMOSFET using a pulsed laser,\u201d Microelectronics Reliability <b>116<\/b> (2021) 113997 (DOI: 10.1016\/j.microrel.2020.113997).","DOI":"10.1016\/j.microrel.2020.113997"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] E.W. Cascio, <i>et al<\/i>.: \u201cSingle event effects in power MOSFETs due to the secondary neutron environment in a proton therapy center,\u201d IEEE Trans. Nucl. Sci. <b>59<\/b> (2012) 3154 (DOI: 10.1109\/tns.2012.2221741).","DOI":"10.1109\/TNS.2012.2221741"},{"key":"28","unstructured":"[28] Y.M. Zhang, <i>et al<\/i>.: \u201cDesign and modeling of merged PiN\/Schottky diode (MPS) based on SiC and Si,\u201d Power Electronics <b>36<\/b> (2002) 56."},{"key":"29","unstructured":"[29] J.Y. Zhang: \u201cStudy on switching characteristics of 4H-SiC PIN diodes,\u201d MS Thesis, Xidian University, Xian (2010)."},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] Y.T. Yu, <i>et al<\/i>.: \u201cCorrection of single event latchup rate prediction using pulsed laser mapping test,\u201d IEEE Trans. Nucl. Sci. <b>62<\/b> (2015) 565 (DOI: 10.1109\/tns.2015.2412555).","DOI":"10.1109\/TNS.2015.2412555"},{"key":"31","doi-asserted-by":"crossref","unstructured":"[31] A.A. Pechenkin, <i>et al<\/i>.: \u201cEvaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests,\u201d Russian Microelectronics <b>44<\/b> (2015) 33 (DOI: 10.1134\/s1063739715010072).","DOI":"10.1134\/S1063739715010072"},{"key":"32","unstructured":"[32] J. Lutz, <i>et al<\/i>.: <i>Semi-Conductor Power Devices\u2006\u2014\u2006Physics, Characteristics, Reliability<\/i> (Springer International Publishing, 2018)."}],"container-title":["IEICE Electronics Express"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/23\/2\/23_22.20250543\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,1,31]],"date-time":"2026-01-31T03:53:46Z","timestamp":1769831626000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/elex\/23\/2\/23_22.20250543\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,1,25]]},"references-count":32,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2026]]}},"URL":"https:\/\/doi.org\/10.1587\/elex.22.20250543","relation":{},"ISSN":["1349-2543"],"issn-type":[{"value":"1349-2543","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,1,25]]},"article-number":"22.20250543"}}