{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,27]],"date-time":"2025-07-27T07:49:26Z","timestamp":1753602566395},"reference-count":28,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2020,3,1]]},"DOI":"10.1587\/transele.2019ecp5010","type":"journal-article","created":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T22:02:48Z","timestamp":1567375368000},"page":"119-126","source":"Crossref","is-referenced-by-count":6,"title":["Prediction of DC-AC Converter Efficiency Degradation due to Device Aging Using a Compact MOSFET-Aging Model"],"prefix":"10.1587","volume":"E103.C","author":[{"given":"Kenshiro","family":"SATO","sequence":"first","affiliation":[{"name":"Graduate School of Advanced Sciences of Matter, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dondee","family":"NAVARRO","sequence":"additional","affiliation":[{"name":"HiSIM Research Center, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shinya","family":"SEKIZAKI","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yoshifumi","family":"ZOKA","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Naoto","family":"YORINO","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hans J\u00fcrgen","family":"MATTAUSCH","sequence":"additional","affiliation":[{"name":"HiSIM Research Center, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mitiko","family":"MIURA-MATTAUSCH","sequence":"additional","affiliation":[{"name":"HiSIM Research Center, Hiroshima University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] S.B. Naderi, M. Negnevitsky, A. Jalilian, and M.T. Hagh, \u201cEfficient fault ride-through scheme for three phase voltage source inverter-interfaced distributed generation using DC link adjustable resistive type fault current limiter,\u201d Renewable Energy, vol.92, pp.484-498, July 2016. 10.1016\/j.renene.2016.02.016","DOI":"10.1016\/j.renene.2016.02.016"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] R.L. Steigerwald, R.W. De Doncker, and M.H. Kheraluwala, \u201cA comparison of high-power DC-DC soft-switched converter topologies,\u201d IEEE Trans. Ind. Appl., vol.32, no.5, pp.1139-1145, Sept.\/Oct. 1996. 10.1109\/28.536876","DOI":"10.1109\/28.536876"},{"key":"3","unstructured":"[3] H. Matsunami, N. Ootani, T. Kimoto, and T. Nakamura, \u201cTechnology of semiconductor SiC and its application,\u201d The Nikkan Kogyo Shimbun, Tokyo, Japan, pp.9-22, 2011."},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] K. Ino, \u201cNew era of power electronics by SiC power devices evolution,\u201d Proc. Inter. Conf. on Planarization\/CMP Technology, Kobe, Japan, p.4, 2014. 10.1109\/icpt.2014.7017231","DOI":"10.1109\/ICPT.2014.7017231"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] J.D. Van Wyk and F.C. Lee, \u201cOn a future for power electronics,\u201d IEEE Journal of Emerging and Selected Topics in Power Electron., vol.1, no.2, pp.59-72, June 2013. 10.1109\/jestpe.2013.2271499","DOI":"10.1109\/JESTPE.2013.2271499"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] L.A. Moran, I. Pastorini, J. Dixon, and R. Wallace, \u201cA fault protection scheme for series active power filters,\u201d IEEE Trans. Power Electron., vol.14, no.5, pp.928-938, Sept. 1999. 10.1109\/63.788498","DOI":"10.1109\/63.788498"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] S. Inoue and H. Akagi, \u201cA Bidirectional Isolated DC-DC Converter as a Core Circuit of the Next-Generation Medium-Voltage Power Conversion System,\u201d IEEE Trans. Power Electron., vol.22, no.2, pp.535-542, March 2007. 10.1109\/tpel.2006.889939","DOI":"10.1109\/TPEL.2006.889939"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] B. Abdi, A.H. Ranjbar, G.B. Gharehpetian, and J. Milimonfared, \u201cReliability Considerations for Parallel Performance of Semiconductor Switches in High-Power Switching Power Supplies,\u201d IEEE Trans. Ind. Electron., vol.56, no.6, pp.2133-2139, June 2009. 10.1109\/tie.2009.2014306","DOI":"10.1109\/TIE.2009.2014306"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] S.C.O. Mathuna, J.A. Ferreira, and J.D. van Wyk, \u201cTowards a road-map for power electronic system integration,\u201d Proc. European Conference on Power Electronics and Applications, pp.1-9, Sept. 2005. 10.1109\/epe.2005.219758","DOI":"10.1109\/EPE.2005.219758"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] H.-J. Schulze, F.-J. Niedernostheide, F. Pfirsch, and R. Baburske, \u201cLimiting Factors of the Safe Operating Area for Power Devices,\u201d IEEE Trans. Electron Devices, vol.60, no.2, pp.551-562, Feb. 2013. 10.1109\/ted.2012.2225148","DOI":"10.1109\/TED.2012.2225148"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] J.A. Schrock, W.B. Ray II, K. Lawson, A. Bilbao, S.B. Bayne, S.L. Holt, L. Cheng, J.W. Palmour, and C. Scozzie, \u201cHigh-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions,\u201d IEEE Trans. Power Electron., vol.30, no.6, pp.2891-2895, June 2015. 10.1109\/tpel.2014.2357013","DOI":"10.1109\/TPEL.2014.2357013"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] S. Safari, A. Castellazzi, and P. Wheeler, \u201cExperimental and analytical performance evaluation of SiC power devices in the matrix converter,\u201d IEEE Trans. Power Electron., vol.29, no.5, pp.2584-2596, May 2014. 10.1109\/tpel.2013.2289746","DOI":"10.1109\/TPEL.2013.2289746"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] A. Saito, K. Sato, Y. Tanimoto, K. Matsuura, Y. Sasaki, M. Miura-Mattausch, H.J. Mattausch, and Y. Zoka, \u201cEfficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC\/DC Converters,\u201d IEICE Trans. Electron., vol.E99-C, no.9, pp.1065-1070, Sept. 2016. 10.1587\/transele.e99.c.1065","DOI":"10.1587\/transele.E99.C.1065"},{"key":"14","unstructured":"[14] S. Sekizaki, N. Yorino, Y. Nakamura, Y. Sasaki, Y. Zoka, and I. Nishizaki, \u201cA theoretical and experimental study on pseudo-synchronizing power inverter,\u201d Proc. International Conference on Electrical Engineering (ICEE2016), no.90025, Okinawa Jichikaikan, Okinawa, Japan, July 2016."},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] M. Miura-Mattausch, H.J. Mattausch, and T. Ezaki, The Physics and Modeling of MOSFETs, Singapore: World Scientific, 2008. 10.1142\/6159","DOI":"10.1142\/6159"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] Y. Tanimoto, A. Saito, K. Matsuura, H. Kikuchihara, H.J.Mattausch, M. Miura-Mattausch, and N. Kawamoto, \u201cPower-Loss Prediction of High-Voltage SiC-MOSFET Circuits with Compact Model Including Carrier-Trap Influences,\u201d IEEE Trans. Power Electron., vol.31, no.6, pp.4509-4516, June 2016. 10.1109\/tpel.2015.2477413","DOI":"10.1109\/TPEL.2015.2477413"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] K. Sato, S. Sekizaki, D. Navarro, Y. Zoka, N. Yorino, H. Zenitani, H.J. Mattausch, and M. Miura-Mattausch, \u201cAging Simulation of SiC-MOSFET in DC-AC Converter,\u201d Proc. Electron Devices Technology and Manufacturing, Toyama, Japan, pp.119-121, 2017. 10.1109\/edtm.2017.7947534","DOI":"10.1109\/EDTM.2017.7947534"},{"key":"18","unstructured":"[18] HiSIM_HV User's Manual, Hiroshima, Japan, 2016."},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] H. Tanoue, A. Tanaka, Y. Oodate, T. Nakahagi, C. Ma, M. Miyake, H.J. Mattausch, M. Miura-Mattausch, K. Matsuzawa, S. Yamaguchi, T. Hoshida, M. Imade, R. Koh, and T. Arakawa, \u201cUniversal Properties and Compact Modeling of Dynamics Hot-Electron Degradation in n-MOSFETs,\u201d IEEE Intl. Reliability Physics Symposium,Anaheim, CA, USA, pp.CM.4.1-CM.4.6, 2013. 10.1109\/irps.2013.6532064","DOI":"10.1109\/IRPS.2013.6532064"},{"key":"20","doi-asserted-by":"publisher","unstructured":"[20] H. Tanoue, A. Tanaka, Y. Oodate, T. Nakahagi, D. Sugiyama, C. Ma, H.J. Mattausch, and M. Miura-Mattausch, \u201cCompact Modeling of Dynamic MOSFET Degradation Due to Hot-Electrons,\u201d IEEE Trans. Device Mater. Rel., vol.17, no.1, pp.52-58, March 2017. 10.1109\/tdmr.2017.2655519","DOI":"10.1109\/TDMR.2017.2655519"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] M. Miura-Mattausch, H. Miyamoto, H. Kikuchihara, D. Navarro, T.K. Maiti, N. Rohbani, C. Ma, H.J. Mattausch, A. Schiffmann, A. Steinmair, and E. Seebacher, \u201cModeling of Dynamic Trap Density Increase for Aging Simulation of Any MOSFET Circuits,\u201d Proc. European Solid-State Device Research Conference, Leuven, Belgium, pp.192-195, 2017. 10.1109\/essderc.2017.8066624","DOI":"10.1109\/ESSDERC.2017.8066624"},{"key":"22","doi-asserted-by":"publisher","unstructured":"[22] H. Yoshioka, T. Nakamura, and T. Kimoto, \u201cAccurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance,\u201d J. Applied Physics, 111, 014502, 2012. 10.1063\/1.3673572","DOI":"10.1063\/1.3673572"},{"key":"23","doi-asserted-by":"publisher","unstructured":"[23] A. Fayyaz, G. Romano, and A. Castellazzi, \u201cBody diode reliability investigation of SiC power MOSFETs,\u201d Microelectronics Reliability, vol.64, pp.530-534, 2016. 10.1016\/j.microrel.2016.07.044","DOI":"10.1016\/j.microrel.2016.07.044"},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] M. Matin, A. Saha, and J.A. Cooper, \u201cA self-aligned process for high voltage, short-channel vertical DMOSFETs in 4H-SiC,\u201d IEEE Trans. Electron Devices, vol.51, no.10, pp.1721-1725, Oct. 2004. 10.1109\/ted.2004.835622","DOI":"10.1109\/TED.2004.835622"},{"key":"25","unstructured":"[25] F. Ciobaru, \u201cDetermination of electrically active traps at the interface of SiC-MIS capacitors,\u201d Ph.D. Dissertation, Friedrich-Alexander-Universit\u00e4t, Erlangen-N\u00fcrnberg, 2005."},{"key":"26","doi-asserted-by":"publisher","unstructured":"[26] E. Murakami, K. Oda, and T. Takeshita, \u201cSpecial features of Fowler-Nordheim stress degration of SiC-MOSFETs,\u201d Japanese Journal of Applied Physics, vol.55, 04ER14, 2016. 10.7567\/jjap.55.04er14","DOI":"10.7567\/JJAP.55.04ER14"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] C. Ma, H.J. Mattausch, M. Miyake, T. Iizuka, M. Miura-Mattausch, K. Matsuzawa, S. Yamaguchi, T. Hoshida, M. Imade, R. Koh, T. Arakawa, and J. He, \u201cCompact Reliability Model for Degradation of Advanced p-MOSFETs Due to NBTI and Hot-Carrier Effects in the Circuit Simulation,\u201d IEEE Intl. Reliability Physics Symposium, Anaheim, CA, USA, pp.2A.3.1-2A.3.6, 2013. 10.1109\/irps.2013.6531943","DOI":"10.1109\/IRPS.2013.6531943"},{"key":"28","unstructured":"[28] M. Yano and R. Uchida, Power Electronics, Maruzen Publishing, Tokyo, Japan, 2000."}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/3\/E103.C_2019ECP5010\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,3,7]],"date-time":"2020-03-07T03:20:31Z","timestamp":1583551231000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/3\/E103.C_2019ECP5010\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,3,1]]},"references-count":28,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2019ecp5010","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,3,1]]}}}