{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,2]],"date-time":"2022-04-02T15:47:40Z","timestamp":1648914460665},"reference-count":6,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"6","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2020,6,1]]},"DOI":"10.1587\/transele.2019ecs6017","type":"journal-article","created":{"date-parts":[[2020,1,6]],"date-time":"2020-01-06T22:03:31Z","timestamp":1578348211000},"page":"332-334","source":"Crossref","is-referenced-by-count":0,"title":["An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-\u00b5m SOI Process"],"prefix":"10.1587","volume":"E103.C","author":[{"given":"Mo","family":"ZHOU","sequence":"first","affiliation":[{"name":"University of Science and Technology of China"},{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}]},{"given":"Yi","family":"SHAN","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}]},{"given":"Yemin","family":"DONG","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] S. Voldman, F. Assaderaghi, J. Mandelman, L. Hsu, and G. Shahidi, \u201cDynamic threshold body- and gate-coupled SOI ESD protection networks,\u201d Proc. EOS\/ESD Symp., Santa Clara, CA, USA, pp.23-25, Sept. 1997. DOI:10.1109\/EOSESD.1997.634245 10.1109\/EOSESD.1997.634245","DOI":"10.1109\/EOSESD.1997.634245"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] M.G. Khazhinsky, \u201cESD protection strategies in advanced CMOS SOI ICs,\u201d Microelectron. Reliab., vol.47, no.9-11, pp.1313-1321, 2007. DOI:10.1016\/j.microrel.2007.07.086 10.1016\/j.microrel.2007.07.086","DOI":"10.1016\/j.microrel.2007.07.086"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] K. Verhaege, G. Groeseneken, J.-P. Colinge, and H.E. Maes, \u201cDouble snapback in SOI nMOSFETs and its application for SOI ESD protection,\u201d IEEE Electron Device Lett., vol.14, no.7, pp.326-328, 1993. DOI:10.1109\/55.225561 10.1109\/55.225561","DOI":"10.1109\/55.225561"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] B. Song, Y. Han, M. Li, S. Dong, W. Guo, D. Huang, F. Ma, and M. Miao, \u201cSubstrate-triggered GGNMOS in 65 nm CMOS process for ESD application,\u201d Electron. Lett., vol.46, no.7, pp.518-520, 2010. DOI:10.1049\/el.2010.0205 10.1049\/el.2010.0205","DOI":"10.1049\/el.2010.0205"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] M. Paul, C. Russ, B.S. Kumar, H. Gossner, and M. Shrivastava, \u201cPhysics of current filamentation in ggNMOS devices under ESD condition revisited,\u201d IEEE Trans. Electron Devices, vol.65, no.7, pp.2981-2989, 2018. DOI:10.1109\/TED.2018.2835831 10.1109\/TED.2018.2835831","DOI":"10.1109\/TED.2018.2835831"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] P. Mahajan, S. Suresh, A. Quah, F. Rivai, R. Jain, U. Singh, R. Gauthier, and K.J. Hwang, \u201cRobust ESD implanted 5V GGNMOS clamp design and process optimization with maximized ESD design window,\u201d 2019 EDTM Conf., Singapore, March 2019. DOI:10.1109\/EDTM.2019.8731306 10.1109\/EDTM.2019.8731306","DOI":"10.1109\/EDTM.2019.8731306"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/6\/E103.C_2019ECS6017\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,6,6]],"date-time":"2020-06-06T03:24:24Z","timestamp":1591413864000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/6\/E103.C_2019ECS6017\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,6,1]]},"references-count":6,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2019ecs6017","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,6,1]]}}}