{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,27]],"date-time":"2026-05-27T23:25:22Z","timestamp":1779924322102,"version":"3.53.1"},"reference-count":20,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"11","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2020,11,1]]},"DOI":"10.1587\/transele.2019ocp0005","type":"journal-article","created":{"date-parts":[[2020,7,9]],"date-time":"2020-07-09T22:06:23Z","timestamp":1594332383000},"page":"661-668","source":"Crossref","is-referenced-by-count":3,"title":["Highly Reliable and Compact InP-Based In-Phase and Quadrature Modulators for Over 400 Gbit\/s Coherent Transmission Systems"],"prefix":"10.1587","volume":"E103.C","author":[{"given":"Hajime","family":"TANAKA","sequence":"first","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tsutomu","family":"ISHIKAWA","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Takashi","family":"KITAMURA","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Masataka","family":"WATANABE","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ryuji","family":"YAMABI","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ryo","family":"YAMAGUCHI","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Naoya","family":"KONO","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Takehiko","family":"KIKUCHI","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Morihiro","family":"SEKI","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tomokazu","family":"KATSUYAMA","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mitsuru","family":"EKAWA","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hajime","family":"SHOJI","sequence":"additional","affiliation":[{"name":"Sumitomo Electric Industries, Ltd."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W.Wiegmann, T.H. Wood, and C.A. Burrus, \u201cBand-edge electroabsorption in quantum well structures: the quantum-confined stark effect,\u201d Phys. Rev. Lett., vol.53, no.22, pp.2173-2176, Nov. 1984. 10.1103\/physrevlett.53.2173","DOI":"10.1103\/PhysRevLett.53.2173"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] A. Rao and S. Fathpour, \u201cHeterogeneous thin-film Lithium Niobate integrated photonics for electrooptics and nonlinear optics,\u201d IEEE J. Sel. Topics Quantum Electron., vol.24, no.6, Art. No. 8200912, Nov.-Dec. 2018. 10.1109\/jstqe.2018.2836939","DOI":"10.1109\/JSTQE.2018.2836939"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] A. Rao and S. Fathpour, \u201cCompact Lithium Niobate electrooptic modulators,\u201d IEEE J. Sel. Topics Quantum Electron., vol.24, no.4, Art. No. 3400114, July-Aug. 2018. 10.1109\/jstqe.2017.2779869","DOI":"10.1109\/JSTQE.2017.2779869"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] Y. Yamaguchi, A. Kanno, N. Yamamoto, T. Kawanishi, and H. Nakajima, \u201cHigh extinction ratio LN modulator with low half-wave voltage and small chirp by using thin substrate,\u201d Proc. 22nd Microoptics Conference, Tokyo, Japan, pp.36-37, Nov. 2017. 10.23919\/moc.2017.8244483","DOI":"10.23919\/MOC.2017.8244483"},{"key":"5","unstructured":"[5] T. Kawanishi, \u201cUltra high-speed LN modulator technology and its applications,\u201d Proc. The 16th Opto-Electronics And Communications Conference, Kaohsiung, Taiwan, pp.57-58, July 2011."},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] D.J. Thomson, F.Y. Gardesc, J. Fedeli, S. Zlatanovic, Y. Hu, B.P.P. Kuo, E. Myslivets, N. Alic, S. Radic, G.Z. Mashanovich, and G.T. Reed, \u201c50-Gb\/s silicon optical modulator,\u201d IEEE Photon. Technol. Lett., vol.24, no.4, pp.234-236, Feb. 2012. 10.1109\/lpt.2011.2177081","DOI":"10.1109\/LPT.2011.2177081"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] H. Xu, X. Xiao, X. Li, Y. Hu, Z. Li, T. Chu, Y. Yu, and J. Yu, \u201cHigh speed silicon Mach-Zehnder modulator based on interleaved PN junctions,\u201d Opt. Express, vol.20, no.14, pp.15093-15099, June 2012. 10.1364\/oe.20.015093","DOI":"10.1364\/OE.20.015093"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] P. Dong, L. Chen, and Y. Chen, \u201cHigh-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,\u201d Opt. Express, vol.20, no.6, pp.6163-6169, Feb. 2012. 10.1364\/oe.20.006163","DOI":"10.1364\/OE.20.006163"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N.Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, \u201c12.5-Gb\/s operation with 0.29-Vcm V<sub>\u03c0<\/sub>L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,\u201d Opt. Express, vol.20, no.3, pp.2911-2923, Jan. 2012. 10.1364\/oe.20.002911","DOI":"10.1364\/OE.20.002911"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] J. Fujikata, M. Takahashi, S. Takahashi, T. Horikawa, and T.Nakamura, \u201cHigh-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon,\u201d Jpn. J. Appl. Phys., vol.55, no.4, Art. no. 042202-1-6, April 2016. 10.7567\/jjap.55.042202","DOI":"10.7567\/JJAP.55.042202"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] M. Takenaka, J. Han, F. Boeuf, J. Park, Q. Li, C.P. Ho, D. Lyu, S. Ohno, J. Fujikata, S. Takahashi, and S. Takagi, \u201cIII-V\/Si hybrid MOS optical phase shifter for Si photonic integrated circuits,\u201d J. Light. Technol., vol.37, no.5, pp.1474-1483, March 2019. 10.1109\/jlt.2019.2892752","DOI":"10.1109\/JLT.2019.2892752"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] N. Kono, T. Kitamura, H. Yagi, N. Itabashi, T. Tatsumi, Y.Yamauchi, K. Fujii, K. Horino, S. Yamanaka, K. Tanaka, K.Yamaji, C. Fukuda, and H. Shoji, \u201cCompact and low power DP-QPSK modulator module with InP-based modulator and driver ICs,\u201d Proc. Optical Fiber Communication Conference 2013, Anaheim, CA, p.OWIG.2., March 2013. 10.1364\/ofc.2013.ow1g.2","DOI":"10.1364\/OFC.2013.OW1G.2"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] H. Yagi, T. Kaneko, N. Kono, Y. Yoneda, K. Uesaka, M. Ekawa, M. Takechi, and H. Shoji, \u201cInP-based monolithically integrated photonic devices for digital coherent transmission,\u201d IEEE J. Sel. Topics Quantum Electron., vol.24, no.1, Art. No. 6100411, Jan.-Feb. 2018. 10.1109\/jstqe.2017.2725445","DOI":"10.1109\/JSTQE.2017.2725445"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] T. Kitamura, M. Watanabe, N. Kono, T. Kikuchi, R. Yamabi, H. Tanaka, M. Seki, T. Katsuyama, M. Ekawa, and H. Shoji, \u201cOn-chip integration of RF termination resistor and backside via hole in InP-based Mach-Zehnder modulator for compact coherent transceiver,\u201d Proc. 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan, p.H-4-05, Sept. 2018. 10.7567\/ssdm.2018.h-4-05","DOI":"10.7567\/SSDM.2018.H-4-05"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] F. Hirose, K. Mochizuki, J. Suzuki, S. Hayashi, Y. Suzuki, and K. Hasegawa, \u201cCompact InP MZM optical sub-assembly with built-in electrical filters by three-dimensional packaging technique,\u201d Proc. 24th OptoElectronics and Communications Conference, Fukuoka, Japan, p.WD2-3, July 2019. 10.23919\/ps.2019.8817723","DOI":"10.23919\/PS.2019.8817723"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] Y. Ogiso, J. Ozaki, Y. Ueda, N. Kashio, N. Kikuchi, E. Yamada, H. Tanobe, S. Kanazawa, H. Yamazaki, Y. Ohiso, T. Fujii, and M.Kohtoku, \u201cOver 67 GHz bandwidth and 1.5 V V\u03c0 InP-based optical IQ modulator with n-i-p-n heterostructure,\u201d J. Light. Technol., vol.35, no.8, pp.1450-1455, April 2017. 10.1109\/jlt.2016.2639542","DOI":"10.1109\/JLT.2016.2639542"},{"key":"17","doi-asserted-by":"publisher","unstructured":"[17] M. Yuda, M. Fukuda, and H. Miyazawa, \u201cDegradation mode in semiconductor optical modulators,\u201d Electron. Lett., vol.31, no.20, pp.1778-1779, Sept. 1995. 10.1049\/el:19951227","DOI":"10.1049\/el:19951227"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] H. Mawatari, T. Yasui, K. Watanabe, M. Ishikawa, E. Yamada, Y. Shibata, and H. Ishii, \u201cClarification of the degradation modes of an InP-based semiconductor MZ modulator,\u201d Proc. 2012 IEEE International Reliability Physics Symposium, Anaheim, CA, pp.CD.7.1-CD.7.5., April 2012. 10.1109\/irps.2012.6241884","DOI":"10.1109\/IRPS.2012.6241884"},{"key":"19","unstructured":"[19] K. Kotani, T. Kawasaki, T. Miyazaki, S. Yaegasi, and H. Yano, \u201cHigh etch rate and low temperature InP backside via etching using HI-based inductively coupled plasma,\u201d Proc. 2004 Int. Conf. Indium Phosphide Related Mater., Kagoshima, Japan, pp.717-720, May\/June 2004. 10.1109\/iciprm.2004.1442826"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] A. Berman, \u201cTime-zero dielectric reliability test by a ramp method,\u201d Proc. of 19th International Reliability Physics Symposium, Las Vegas, NV, pp.204-209, April 1981. 10.1109\/irps.1981.362997","DOI":"10.1109\/IRPS.1981.362997"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/11\/E103.C_2019OCP0005\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,11,7]],"date-time":"2020-11-07T03:12:20Z","timestamp":1604718740000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/11\/E103.C_2019OCP0005\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,1]]},"references-count":20,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2019ocp0005","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,11,1]]}}}