{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,7]],"date-time":"2023-10-07T05:03:56Z","timestamp":1696655036093},"reference-count":20,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2020,10,1]]},"DOI":"10.1587\/transele.2020mmi0002","type":"journal-article","created":{"date-parts":[[2020,3,18]],"date-time":"2020-03-18T22:05:32Z","timestamp":1584569132000},"page":"404-410","source":"Crossref","is-referenced-by-count":1,"title":["Recent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating"],"prefix":"10.1587","volume":"E103.C","author":[{"given":"Toshio","family":"ISHIZAKI","sequence":"first","affiliation":[{"name":"Ryukoku University"}]},{"given":"Takayuki","family":"MATSUMURO","sequence":"additional","affiliation":[{"name":"Ryukoku University"}]}],"member":"532","reference":[{"key":"1","unstructured":"[1] I. Angelov, H. Zirath, and N. Rousset, \u201cA New Empirical Nonlinear Model for HEMT and MESFET Devices,\u201d IEEE Trans. Microw. Theory Techn., vol.40, no.12, pp.2258-2266, Dec. 1992."},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] I. Angelov, V. Desmaris, K. Dynefors, P.\u00c5. Nilsson, N. Rorsman,and H. Zirath, \u201cOn the large-signal modeling of AlGaN\/GaN HEMTs and SiC MESFETs,\u201d EGAAS, pp.309-312, 2005.","DOI":"10.1109\/APMC.2006.4429422"},{"key":"3","unstructured":"[3] S. Yoshikawa, K. Nakatani, and T. Ishizaki, \u201cA Study on Non-linear Device Model for Design of High-Efficiency GaN Saturated Power Amplifiers,\u201d IEICE Trans. Electron., vol.J97-C, no.12, pp.463-471, Dec. 2014. (in Japanese)"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] K. Nakatani and T. Ishizaki, \u201c2.4GHz-Band 100W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating,\u201d Journal of Elec. Engineering and Science, vol.15, no.2, pp.82-88, April 2015. 10.5515\/jkiees.2015.15.2.82","DOI":"10.5515\/JKIEES.2015.15.2.82"},{"key":"5","unstructured":"[5] S. Yoshida, R. Ishikawa, and K. Honjo, \u201cExperimental Parameter Extraction Method by Pulse Response Evaluation Applied to Multistage Thermal <i>RC<\/i> Ladder Circuit in Large-Signal HEMT Model for Analysis of Thermal Memory Effect,\u201d IEICE Trans. Electron., vol.J97-C, no.12, pp.456-462, Dec. 2014."},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] M.S. Hashmi and F.M. Ghannouchi, \u201cIntroduction to Load-Pull Systems and their Applications,\u201d IEEE Instrum. Meas. Mag., vol.16, no.1, pp.30-36, 2013. 10.1109\/mim.2013.6417055","DOI":"10.1109\/MIM.2013.6417055"},{"key":"7","unstructured":"[7] Product Note 92, \u201cHybrid tuners,\u201d Focus Microwaves, July 2017."},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] A. Ferrero, V. Teppati, and U. Pisani, \u201cRecent Improvements in Real-Time Load-Pull Systems,\u201d Proc. IMTC2006, April 2006. 10.1109\/imtc.2006.328515","DOI":"10.1109\/IMTC.2006.328515"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] V. Teppati, A. Ferrero, and U. Pisani, \u201cRecent Advances in Real-Time Load-Pull Systems,\u201d IEEE Trans. Instrum. Meas., vol.57, no.11, pp.2640-2646, Nov. 2008. 10.1109\/tim.2008.926044","DOI":"10.1109\/TIM.2008.926044"},{"key":"10","unstructured":"[10] K. Kawabe, G. Nishio, and T. Ishizaki, \u201cBasic study on Open- and Closed-Loop Active Load-Pull System,\u201d IEICE Tech. Rep., vol.117, no.291, MW2017-113, pp.9-13, Nov. 2017. (in Japanese)"},{"key":"11","unstructured":"[11] K. Kawabe and T. Ishizaki, \u201cStudy on stability of Active Load-Pull Systems,\u201d IEICE Tech. Rep., MW2017-158, Dec. 2017. [In Japanese]"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] K. Kawabe and T. Ishizaki, \u201cA Novel Composite-Loop Active Load-Pull System Having Stability and Simple Structure,\u201d Proc. APMC2018, Nov. 2018. 10.23919\/apmc.2018.8617562","DOI":"10.23919\/APMC.2018.8617562"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] A. Maekawa, T. Yamamoto, E. Mitani, and S. Sano, \u201cA 500W push-pull AlGaN\/GaN HEMT amplifier for L-band high power application,\u201d IEEE\/MTT-S Digest of IMS2006, pp.722-725, June 2006. 10.1109\/mwsym.2006.249735","DOI":"10.1109\/MWSYM.2006.249735"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] N. Ui and S. Sano, \u201cA 100W Class-E GaN HEMT with 75% drain efficiency at 2 GHz,\u201d Proc. EuMIC2006, pp.72-74, Sept. 2006. 10.1109\/emicc.2006.282753","DOI":"10.1109\/EMICC.2006.282753"},{"key":"15","unstructured":"[15] K. Yamanaka, Y. Tuyama, and H. Ohtsuka, \u201cInternally-matched GaN HEMT high efficiency power amplifier for space solar power stations,\u201d Proc. APMC2010, pp.119-122, 2010."},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] K. Motoi, K. Matsunaga, S. Yamanouchi, K. Kunihiro, and M. Fukaishi, \u201cA 72% PAE, 95-W, single-chip GaN FET S-band inverse class-F power amplifier with a harmonic resonant circuit,\u201d IEEE\/MTT-S Digest of IMS2012, pp.1-3, 2012. 10.1109\/mwsym.2012.6258355","DOI":"10.1109\/MWSYM.2012.6258355"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] H. Maehara, H. Uchida, N. Kosaka, E. Kuwata, K. Yamanaka, J. Nishihara, K. Kawashima, and M. Nakayama, \u201cInternally matched GaN FET at C-band with 220W output power and 56% power added efficiency,\u201d Proc. APMC2012, Dec. 2012. 10.1109\/apmc.2012.6421597","DOI":"10.1109\/APMC.2012.6421597"},{"key":"18","unstructured":"[18] T. Tani, S. Naka, A. Yamada, T.D. Khiem, and S. Tani, \u201cNew horizon of Microwave in Medical Field; Invention of Surgery Assisting Devices using Microwave,\u201d Digest of MWE2019, TH2B-1, Nov. 2019. (in Japanese)"},{"key":"19","unstructured":"[19] S. Naka, A. Yamada, and T. Tani, \u201cMicrowave Surgical Device and Intraoperative MRI realize Ultimate Surgical System,\u201d Digest of MWE2019, TH2B-2, Nov. 2019. [In Japanese]"},{"key":"20","unstructured":"[20] A. Suzuki and T. Ishizaki, \u201c2.4GHz-Band Compact GaN Power Amplifier with LTCC Matching Circuit,\u201d Digest of Society Conf., C-2-7, Sept. 2016. (in Japanese)"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/10\/E103.C_2020MMI0002\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,10,3]],"date-time":"2020-10-03T03:19:22Z","timestamp":1601695162000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E103.C\/10\/E103.C_2020MMI0002\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,10,1]]},"references-count":20,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2020]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2020mmi0002","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,10,1]]}}}