{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,5,9]],"date-time":"2024-05-09T00:02:47Z","timestamp":1715212967077},"reference-count":43,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2021,10,1]]},"DOI":"10.1587\/transele.2021mmi0001","type":"journal-article","created":{"date-parts":[[2021,3,11]],"date-time":"2021-03-11T22:07:12Z","timestamp":1615500432000},"page":"480-487","source":"Crossref","is-referenced-by-count":0,"title":["Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers"],"prefix":"10.1587","volume":"E104.C","author":[{"given":"Masaru","family":"SATO","sequence":"first","affiliation":[{"name":"Fujitsu Laboratories"}]},{"given":"Yoshitaka","family":"NIIDA","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"}]},{"given":"Atsushi","family":"YAMADA","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"},{"name":"Fujitsu"}]},{"given":"Junji","family":"KOTANI","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"},{"name":"Fujitsu"}]},{"given":"Shiro","family":"OZAKI","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"},{"name":"Fujitsu"}]},{"given":"Toshihiro","family":"OHKI","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"}]},{"given":"Naoya","family":"OKAMOTO","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"},{"name":"Fujitsu"}]},{"given":"Norikazu","family":"NAKAMURA","sequence":"additional","affiliation":[{"name":"Fujitsu Laboratories"},{"name":"Fujitsu"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] D. Kuchta, D. Gryglewski, and W. Wojtasiak, \u201cA GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios,\u201d Micromachines 2020, vol.11, no.4, 2020. 10.3390\/mi11040398","DOI":"10.3390\/mi11040398"},{"key":"2","unstructured":"[2] A. Nelander and Z. T\u00f3th-P\u00e1l, \u201cModular System Design for a New S-Band Marine Radar,\u201d 2009 International Radar Conference \u201cSurveillance for a Safer World\u201d, 2009."},{"key":"3","unstructured":"[3] Y. Itoh and K. Honjo, \u201cFundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems,\u201d IEICE Trans. Electron., vol.E86-C, no.2, pp.108-119, Feb. 2003."},{"key":"4","unstructured":"[4] J. Gallagher, J.A. Haimerl, T. Higgins, and M. Gruber, \u201cSpace Fence Radar Leverages Power of GaN,\u201d Microwave Journal, pp.4-9, Sept. 2018."},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] M.J. Pelk, W.C.E. Neo, J.R. Gajadharsing, R.S. Pengelly, and L.C.N. de Vreede, \u201cA High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications,\u201d IEEE Trans. Microw. Theory Techn., vol.56, no.7, pp.1582-1591, July 2008. 10.1109\/tmtt.2008.924364","DOI":"10.1109\/TMTT.2008.924364"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] Y. Kobayashi, S. Yoshida, Z. Yamamoto, and S. Kawasaki, \u201cS-Band GaN on Si Based 1kW-Class SSPA System for Space Wireless Applications,\u201d IEICE Trans. Electron., vol.E96-C, no.10, pp.1245-1253, Oct. 2013. 10.1587\/transele.e96.c.1245","DOI":"10.1587\/transele.E96.C.1245"},{"key":"7","unstructured":"[7] P. Hindle, \u201cGoing Green: High Efficiency GaN Amplifier,\u201d Microwave Journal, pp.23-28, Sept. 2018."},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] T. Sugiura, S. Furuta, T. Murakami, K. Tanji, N. Otani, and T.Yoshimatsu, \u201cHigh Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications,\u201d IEICE Trans. Electron., vol.E102-C, no.10, pp.699-706, Oct. 2019. 10.1587\/transele.2019mmp0007","DOI":"10.1587\/transele.2019MMP0007"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] A. Wakejima, K. Matsunaga, Y. Okamoto, Y. Ando, T. Nakayama, K. Kasahara, and H. Miyamoto, \u201c280 W Output Power Singe-ended Amplifier using Single-die GaN-FET for W-CDMA Cellular Base Stations,\u201d Electronics Letters, vol.41, no.18, pp.1004-1005, 2005. 10.1049\/el:20052513","DOI":"10.1049\/el:20052513"},{"key":"10","unstructured":"[10] T. Kikkawa, T. Maniwa, H. Hayashi, M. Kanamura, S. Yokokawa, M. Nishi, N. Adachi, M. Yokoyama, Y. Tateno, and K. Joshin, \u201cAn over 200-W Output Power GaN HEMT Push-pull Amplifier with High Reliability,\u201d Proc. IEEE MTT-S International Microwave Symposium, pp.1347-1350, 2004. 10.1109\/mwsym.2004.1338818"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S.P. DenBaars, J.S. Speck, and U.K. Mishra, \u201cHigh-Power AlGaN\/GaN HEMTs for Ka-Band Applications,\u201d IEEE Electron Device Lett., vol.26, no.11, pp.781-783, Nov. 2005. 10.1109\/led.2005.857701","DOI":"10.1109\/LED.2005.857701"},{"key":"12","unstructured":"[12] K. Joshin and T. Kikkawa, \u201cHigh-Power and High-Efficiency GaN HEMT Amplifiers,\u201d Proc. IEEE Radio and Wireless Symposium, pp.65-68, 2008. 10.1109\/rws.2008.4463429"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] S. Shinjo, M. Hangai, Y. Yamaguchi, and M. Miyazaki, \u201cAdvanced GaN HEMT Modeling Techniques and Power Amplifiers for Millimeter-Wave Applications,\u201d Proc. IEEE MTT-S International Microwave Symposium, pp.566-569, 2020. 10.1109\/ims30576.2020.9223979","DOI":"10.1109\/IMS30576.2020.9223979"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] C.M. Cooke, K.M.K.H. Leong, A. Escorcia, K. Nguyen, X.B. Mei, J. Arroyo, T.W. Barton, D.L. Wu, and W.R. Deal, \u201cA 220-GHz InP HEMT Direct Detection Polarimeter,\u201d IEEE Trans. Microw. Theory Techn., vol.67, no.12, pp.5191-5201, Dec. 2019. 10.1109\/tmtt.2019.2944908","DOI":"10.1109\/TMTT.2019.2944908"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] H. Hamada, T. Fujimura, I. Abdo, K. Okada, H. Song, H. Sugiyama, H. Matsuzaki, and H. Nosaka, \u201c300-GHz, 100-Gb\/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer,\u201d Proc. IEEE MTT-S International Microwave Symposium, pp.1480-1483, 2018. 10.1109\/mwsym.2018.8439850","DOI":"10.1109\/MWSYM.2018.8439850"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] A. Ghavidel, F. Tamjid, A. Fathy, and A. Kheirdoost, \u201cGaN Widening Possibilities for PAs,\u201d IEEE Microw. Mag., pp.46-55, 2017.","DOI":"10.1109\/MMM.2017.2680059"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] M. Roberg, S. Schafer, O. Marrufo, and T. Hon, \u201cA 2-20 GHz Distributed GaN Power Amplifier Using a Novel Biasing Technique,\u201d Proc. IEEE MTT-S International Microwave Symposium, pp.694-697, 2019. 10.1109\/mwsym.2019.8700748","DOI":"10.1109\/MWSYM.2019.8700748"},{"key":"18","doi-asserted-by":"publisher","unstructured":"[18] J. Oh, J. Jang, C.-Y. Kim, and S. Hong, \u201cA W-Band 4-GHz Bandwidth Phase-Modulated Pulse Compression Radar Transmitter in 65-nm CMOS,\u201d IEEE Trans. Microw. Theory Techn., vol.63, no.8, pp.2609-2618, 2015. 10.1109\/tmtt.2015.2442992","DOI":"10.1109\/TMTT.2015.2442992"},{"key":"19","unstructured":"[19] S. Masuda, \u201cAdvances in GaN HEMT MMIC Amplifiers,\u201d 2010 Asia-Pacific Microwave Conference, WS2A-4, 2010."},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] C.F. Campbell, S. Nayak, M. Kao, and S. Chen, \u201cDesign and Performance of 16-40 GHz GaN Distributed Power Amplifier MMICs Utilizing an Advanced 0.15 \u00b5m GaN Process,\u201d Proc. IEEE MTT-S International Microwave Symposium, 2016. 10.1109\/mwsym.2016.7540019","DOI":"10.1109\/MWSYM.2016.7540019"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, N. Okamoto, M. Sato, S. Masuda, and K. Watanabe, \u201cX-Ku wide bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE,\u201d Proc. IEEE Compound Semiconductor Integrated Circuit Symposium, 2014. 10.1109\/csics.2014.6978586","DOI":"10.1109\/CSICS.2014.6978586"},{"key":"22","unstructured":"[22] E. Kuwata, K. Yamanaka, H. Koyama, Y. Kamo, T. Kirikoshi, M. Nakayama, and Y. Hirano, \u201cC-K Band Ultra Broadband GaN MMIC Amplifier with 20 W Output Power,\u201d Proc. Asia-Pacific Microwave Conference, pp.1558-1561, 2011."},{"key":"23","unstructured":"[23] S. Nuttinck, E. Gebara, B. Banerjee, S. Venkataraman, J. Laskar, and H.M. Harris, \u201cApplications of GaN Microwave Electronic Devices,\u201d IEICE Trans. Electron., vol.E86-C, no.8, pp.1409-1415, Aug. 2003."},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] A. Corrion, C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U.K. Mishra, and J.S. Speck, \u201cReview of Recent Developments in Growth of AlGaN\/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy,\u201d IEICE Trans. Electron., vol.E89-C, no.7, pp.906-912, July 2006. 10.1093\/ietele\/e89-c.7.906","DOI":"10.1093\/ietele\/e89-c.7.906"},{"key":"25","doi-asserted-by":"publisher","unstructured":"[25] T. Ohki, A. Yamada, Y. Minoura, K. Makiyama, J. Kotani, S. Ozaki, M. Sato, N. Okamoto, K. Joshin, and N. Nakamura, \u201cAn Over 20-W\/mm S-Band InAlGaN\/GaN HEMT with SiC\/Diamond-Bonded Heat Spreader,\u201d IEEE Electron Device Lett., vol.40, no.2, pp.287-290, Feb. 2019. 10.1109\/led.2018.2884918","DOI":"10.1109\/LED.2018.2884918"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] K. Makiyama, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, K. Joshin, K. Watanabe, and Y. Miyamoto, \u201cCollapse-Free High Power InAlGaN\/GaN-HEMT with 3 W\/mm at 96 GHz,\u201d Proc. IEEE International Electron Devices Meeting, 2015. 10.1109\/iedm.2015.7409659","DOI":"10.1109\/IEDM.2015.7409659"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] K. Makiyama, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y.Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, and Y. Miyamoto, \u201cHigh-Power-Density InAlGaN\/GaN-HEMT Technology for W-band Amplifier,\u201d Proc. IEEE Compound Semiconductor Integrated Circuit Symposium, 2016. 10.1109\/csics.2016.7751045","DOI":"10.1109\/CSICS.2016.7751045"},{"key":"28","unstructured":"[28] K. Joshin, S. Ozaki, T. Ohki, N. Okamoto, Y. Niida, and K. Makiyama, \u201cMillimeter-wave GaN HEMT Model with <i>V<sub>ds<\/sub><\/i> Dependence of <i>C<sub>ds<\/sub><\/i> for Power Amplifier Applications,\u201d Proc. Asia-Pacific Microwave Conference, pp.582-584, 2014."},{"key":"29","doi-asserted-by":"publisher","unstructured":"[29] K. Joshin, K. Makiyama, S. Ozaki, T. Ohki, N. Okamoto, Y.Niida, M. Sato, S. Masuda, and K. Watanabe, \u201cMillimeter-Wave GaN HEMT for Power Amplifier Applications,\u201d IEICE Trans. Electron., vol.E97-C, no.10, pp.923-929, Oct. 2014. 10.1587\/transele.e97.c.923","DOI":"10.1587\/transele.E97.C.923"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] Y. Niida, M. Sato, M. Nishimori, T. Ohki, and N. Nakamura, \u201cAn over 230 W, 0.5-2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique,\u201d Proc. IEEE MTT-S International Microwave Symposium, pp.25-28, 2020. 10.1109\/ims30576.2020.9223974","DOI":"10.1109\/IMS30576.2020.9223974"},{"key":"31","unstructured":"[31] Verilog-A definition of Angelov GaN FET in Agilent Advanced Design System (ADS) 2012.08."},{"key":"32","doi-asserted-by":"crossref","unstructured":"[32] Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, M. Sato, K. Joshin, and K. Watanabe, \u201c3.6 W\/mm High Power Density W-band InAlGaN\/GaN HEMT MMIC Power Amplifier,\u201d Proc. IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, pp.24-26, 2016. 10.1109\/pawr.2016.7440153","DOI":"10.1109\/PAWR.2016.7440153"},{"key":"33","unstructured":"[33] M. Sato, \u201cGaN HEMT Technology for W-Band High Power Amplifiers,\u201d European Microwave Conference, Workshop WS-02-6, 2017."},{"key":"34","unstructured":"[34] J. Sevick, Transmission Line Transformers, 4th ed., 2001."},{"key":"35","doi-asserted-by":"crossref","unstructured":"[35] J. Cho, K. Lim, S. You, M. Seo, K. Kim, J. Sim, M. Park, and Y. Yang, \u201cDesign of a 100 Watt High-Efficiency Power Amplifier for the 10-500 MHz Band,\u201d Proc. Asia Pacific Microwave Conference, pp.285-288, 2009. 10.1109\/apmc.2009.5385389","DOI":"10.1109\/APMC.2009.5385389"},{"key":"36","unstructured":"[36] G. Boeck, \u201cModeling and Design of Multilayer Transmission Line Transformers and Baluns,\u201d Proc. IEEE International Conference on Microwave and Optoelectronics, pp.230-232, 2005. 10.1109\/imoc.2005.1579984"},{"key":"37","unstructured":"[37] A.A. Tanany, D. Gruner, and G. Boeck, \u201cHarmonically Tuned 100 W Broadband GaN HEMT Power Amplifier with more than 60% PAE,\u201d Proc. European Microwave Conference, pp.159-162, 2011."},{"key":"38","unstructured":"[38] M.T. Arnous, K. Bathich, S. Preis, and G. Boeck, \u201cHarmonically-Tuned Octave Bandwidth 200 W GaN Power Amplifier,\u201d Proc. European Microwave Integrated Circuit Conference, pp.429-432, 2012."},{"key":"39","doi-asserted-by":"crossref","unstructured":"[39] S. Preis, D. Gruner, and G. Boeck, \u201cInvestigation of Class-B\/J Continuous Modes in Broadband GaN Power Amplifiers,\u201d Proc. IEEE MTT-S International Microwave Symposium, 2012. 10.1109\/mwsym.2012.6258413","DOI":"10.1109\/MWSYM.2012.6258413"},{"key":"40","doi-asserted-by":"crossref","unstructured":"[40] P. Saad, D. Maassen, and G. Boeck, \u201cEfficient and Wideband Two-Stage 100 W GaN-HEMT Power Amplifier,\u201d Proc. European Microwave Integrated Circuit Conference, pp.337-340, 2014. 10.1109\/eumic.2014.6997861","DOI":"10.1109\/EuMIC.2014.6997861"},{"key":"41","doi-asserted-by":"crossref","unstructured":"[41] K. Krishnamurthy, D. Lieu, R. Vetury, and J. Martin, \u201cA 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module,\u201d Proc. IEEE Compound Semiconductor Integrated Circuit Symposium, 2010. 10.1109\/csics.2010.5619612","DOI":"10.1109\/CSICS.2010.5619612"},{"key":"42","doi-asserted-by":"crossref","unstructured":"[42] B.A. Ezzeddine, A. Hung, E. Viveiros, and H. Huang, \u201cUltra Wide-Band, High-Power, High-Efficiency GaN Amplifier,\u201d Proc. IEEE International Wireless Symposium (IWS), 2013. 10.1109\/ieee-iws.2013.6616737","DOI":"10.1109\/IEEE-IWS.2013.6616737"},{"key":"43","doi-asserted-by":"crossref","unstructured":"[43] Y. Niida, M. Sato, T. Ohki, and N. Nakamura, \u201cA 0.6-2.1-GHz Wideband GaN High-Power Amplifier Using Transmission-Line-Transformer Based Differential-Mode Combiner with Second-Harmonic Suppression,\u201d IEEE Trans. Microw. Theory Techn., vol.69, no.3, pp.1675-1683, March 2021.","DOI":"10.1109\/TMTT.2021.3053977"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E104.C\/10\/E104.C_2021MMI0001\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,8]],"date-time":"2024-05-08T04:38:59Z","timestamp":1715143139000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E104.C\/10\/E104.C_2021MMI0001\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,10,1]]},"references-count":43,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2021]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2021mmi0001","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,10,1]]},"article-number":"2021MMI0001"}}