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Krishnamoorthy, H.D. Thacker, O. Torudbakken, S. M\u00fcller, A. Srinivasan, P.J. Decker, H. Opheim, J.E. Cunningham, I. Shubin, X. Zheng, M. Dignum, K. Raj, E. Rongved, and R. Penumatcha, \u201cFrom Chip to Cloud: Optical Interconnects in Engineered Systems,\u201d in Journal of Lightwave Technology, vol.35, no.15, pp.3103-3115, 1 Aug. 1, 2017 (DOI: 10.1109\/JLT.2016.2642822). 10.1109\/jlt.2016.2642822","DOI":"10.1109\/JLT.2016.2642822"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] E. Sentieri, T. Copani, A. Paganini, M. Traldi, A. Palladino, A. Santipo, L. Gerosa, M. Repossi, G. Catrini, M. Campo, F. Radice, A. Diodato, R. Pelleriti, D. Baldi, L. Tarantini, L. Maggi, G. Radaelli, S. Cervini, F. Clerici, and A. Moroni, \u201c12.2 A 4-Channel 200Gb\/s PAM-4 BiCMOS Transceiver with Silicon Photonics Front-Ends for Gigabit Ethernet Applications,\u201d 2020 IEEE International Solid-State Circuits Conference-(ISSCC), pp.210-212, 2020 (DOI: 10.1109\/ISSCC19947.2020.9062992). 10.1109\/isscc19947.2020.9062992","DOI":"10.1109\/ISSCC19947.2020.9062992"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] D. Marris-Morini, L. Vivien, G. Rasigade, J.-M. Fedeli, E. Cassan, X.L. Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, M. Halbwax, and S. Laval, \u201cRecent Progress in High-Speed Silicon-Based Optical Modulators,\u201d in Proc. IEEE, vol.97, no.7, pp.1199-1215, 2009 (DOI:10.1109\/JPROC.2009.2015337). 10.1109\/jproc.2009.2015337","DOI":"10.1109\/JPROC.2009.2015337"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] S. Kanazawa, T. Fujisawa, N. Nunoya, A. Ohki, K. Takahata, H. Sanjoh, R. Iga, and H. Ishii, \u201cUltra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission,\u201d in Journal of Lightwave Technology, vol.31, no.4, pp.602-608, Feb. 15, 2013 (DOI: 10.1109\/JLT.2012.2218793). 10.1109\/jlt.2012.2218793","DOI":"10.1109\/JLT.2012.2218793"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] J. Witzens, \u201cHigh-Speed Silicon Photonics Modulators,\u201d in Proc. IEEE, vol.106, no.12, pp.2158-2182, Dec. 2018 (DOI: 10.1109\/ JPROC.2018.2877636). 10.1109\/jproc.2018.2877636","DOI":"10.1109\/JPROC.2018.2877636"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] S. Tanaka, T. Simoyama, T. Aoki, T. Mori, S. Sekiguchi, S.-H. Jeong, T. Usuki, Y. Tanaka, and K. Morito, \u201cUltralow-Power (1.59 mW\/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach-Zehnder Modulator and 28-nm CMOS Driver,\u201d in Journal of Lightwave Technology, vol.36, no.5, pp.1275-1280, 1 March 1, 2018 (DOI: 10.1109\/JLT.2018.2799965). 10.1109\/jlt.2018.2799965","DOI":"10.1109\/JLT.2018.2799965"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] C. Li, K. Yu, J. Rhim, K. Zhu, N. Qi, M. Fiorentino, T. Pinguet, M. Peterson, V. Saxena, and S. Palermo, \u201cA 3D-Integrated 56 Gb\/s NRZ\/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter,\u201d 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018 (DOI: 10.1109\/BCICTS.2018. 8551089). 10.1109\/bcicts.2018.8551089","DOI":"10.1109\/BCICTS.2018.8551089"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] N. Qi, X. Xiao, S. Hu, X. Li, H. Li, L. Liu, Z. Li, N. Wu, and P.Y. Chiang, \u201cCo-Design and Demonstration of a 25-Gb\/s Silicon-Photonic Mach-Zehnder Modulator With a CMOS-Based High-Swing Driver,\u201d in IEEE J. Sel. Topics Quantum Electron., vol.22, no.6, pp.131-140, Art no.3400410, Nov.-Dec. 2016 (DOI: 10.1109\/JSTQE.2016.2602102). 10.1109\/jstqe.2016.2602102","DOI":"10.1109\/JSTQE.2016.2602102"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] J. Hwang, G.-S. Jeong, W. Bae, J.-E. Park, C.S. Yoon, J.M. Yoon, J. Joo, G. Kim, and D.-K. Jeong, \u201cA 32 Gb\/s, 201 mW, MZM\/EAM Cascode Push-Pull CML Driver in 65 nm CMOS,\u201d in IEEE Trans. Circuits Syst. II, Exp. Briefs, vol.65, no.4, pp.436-440, April 2018 (DOI: 10.1109\/TCSII.2017.2699328). 10.1109\/tcsii.2017.2699328","DOI":"10.1109\/TCSII.2017.2699328"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] H. Sepehrian, A. Yekani, L.A. Rusch, and W. Shi, \u201cCMOS-Photonics Codesign of an Integrated DAC-Less PAM-4 Silicon Photonic Transmitter,\u201d in IEEE Trans. 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