{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,5]],"date-time":"2026-02-05T11:29:29Z","timestamp":1770290969342,"version":"3.49.0"},"reference-count":30,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2023,10,1]]},"DOI":"10.1587\/transele.2022ecp5046","type":"journal-article","created":{"date-parts":[[2023,4,12]],"date-time":"2023-04-12T22:11:14Z","timestamp":1681337474000},"page":"605-613","source":"Crossref","is-referenced-by-count":3,"title":["Uniform\/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier"],"prefix":"10.1587","volume":"E106.C","author":[{"given":"Masaru","family":"SATO","sequence":"first","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yusuke","family":"KUMAZAKI","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Naoya","family":"OKAMOTO","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Toshihiro","family":"OHKI","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Naoko","family":"KURAHASHI","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Masato","family":"NISHIMORI","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atsushi","family":"YAMADA","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junji","family":"KOTANI","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Naoki","family":"HARA","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keiji","family":"WATANABE","sequence":"additional","affiliation":[{"name":"Fujitsu"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] T. Kikkawa, K. Imanishi, M. Kanamura, and K. Joshin, \u201cHighly Uniform AlGaN\/GaN Power HEMT on a 3-inch Conductive N-SiC Substrate for Wireless Base Station Application,\u201d IEEE Compound Semiconductor Integrated Circuit Symposium, pp.77-80, 2005. 10.1109\/csics.2005.1531765","DOI":"10.1109\/CSICS.2005.1531765"},{"key":"2","unstructured":"[2] Y. Itoh and K. Honjo, \u201cFundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems,\u201d IEICE Trans. Electron., vol.E86-C, no.2, pp.108-119, Feb. 2003."},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] K. Honjo, R. Ishikawa, and Y. Takayama, \u201cUltra High Efficiency Microwave Power Amplifier for Wireless Power Transmission,\u201d 42nd European Microwave Conference, pp.1339-1342, 2012. 10.23919\/eumc.2012.6459097","DOI":"10.23919\/EuMC.2012.6459097"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] D. Kuchta, D. Gryglewski, and W. Wojtasiak, \u201cA GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios,\u201d Micromachines (Basel), vol.11, no.4, p.398, 2020. DOI: 10.3390\/mi11040398 10.3390\/mi11040398","DOI":"10.3390\/mi11040398"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] M. Oppermann and R. Rieger, \u201cMultifunctional MMICs-Key Enabler for Future AESA Panel Arrays,\u201d 2018 IMAPS Nordic Conference on Microelectronics Packaging, pp.77-80, 2018. 10.23919\/nordpac.2018.8423857","DOI":"10.23919\/NORDPAC.2018.8423857"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] R. Rieger, A. Klaaben, P. Schuh, and M. Oppermann, \u201cA Full-Array-Grid-Compatible Wideband Tx\/Rx Multipack using Multifunctional Chips on GaN and SiGe,\u201d 48th European Radar Conference, pp.1453-1456, 2018. 10.23919\/eurad.2018.8546648","DOI":"10.23919\/EuMC.2018.8541723"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] N. Hasegawa, T. Fujiwara, T. Morita, A. Kishimoto, K. Hasegawa, Y. Takagi, and Y. Ohta, \u201cPhase-Locked Magnetrons for Beam Combining in High Power Antenna Array on MPT System,\u201d IEEE Asia-Pacific Microwave Conference, pp.905-907, 2019. 10.1109\/apmc46564.2019.9038460","DOI":"10.1109\/APMC46564.2019.9038460"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] Z. Du, Z. Wu, W. Gan, G. Liu, X. Zhang, J. Liu, and B. Zeng, \u201cMulti-Physics Modeling and Process Simulation for a Frequency-Shifted Solid-State Source Microwave Oven,\u201d IEEE Access, vol.7, pp.184726-184733, 2019. 10.1109\/access.2019.2960317","DOI":"10.1109\/ACCESS.2019.2960317"},{"key":"9","unstructured":"[9] https:\/\/www.microwavejournal.com\/articles\/34902-ampleon-cost-optimized-250-w-ldmos-for-245-ghz-ism-applications-and-solid-state-cooking"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] T. Ishizaki and T. Matsumuro, \u201cRecent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating,\u201d IEICE Trans. Electron., vol.E103-C, no.10, pp.404-410, Oct. 2020. 10.1587\/transele.2020mmi0002","DOI":"10.1587\/transele.2020MMI0002"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] T. Sugitani, K. Iyomasa, M. Hangai, Y. Kawamura, J. Nishihara, and S. Shinjo, \u201c2.45 GHz ISM-Band 450W High Efficiency GaN Pallet Amplifier for Microwave Heating,\u201d Proceedings of 2018 Asia-Pacific Microwave Conference, pp.1621-1623, 2018. 10.23919\/apmc.2018.8617151","DOI":"10.23919\/APMC.2018.8617151"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] K. Nakatani and T. Ishizaki, \u201cA 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating,\u201d Journal of Electromagnetic engineering and Science, vol.15, no.2, pp.82-88, 2015. 10.5515\/jkiees.2015.15.2.82","DOI":"10.5515\/JKIEES.2015.15.2.82"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] K. Iyomasa, T. Shiode, K. Yamanaka, K. Mori, H. Fukumoto, T. Ishizaki, Y. Tsukahara, and Y. Wada, \u201cHigh Efficiency Chemical Reactions Induced by Concentrated Microwave Heating Using GaN Amplifier Modules,\u201d Journal of the Japan Petroleum Institute, vol.61, no.2, pp.163-170, 2018. (Japanese)","DOI":"10.1627\/jpi.61.163"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] N. Okamoto, M. Sato, M. Nishimori, Y. Kumazaki, T. Ohki, N. Hara, and K. Watanabe, \u201cThermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven,\u201d IEEE Trans. Compon. Packag. Manuf. Technol., vol.11, no.11, pp.1909-1916, Nov. 2021. 10.1109\/tcpmt.2021.3116616","DOI":"10.1109\/TCPMT.2021.3116616"},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] J. Kotani, A. Yamada, T. Ishiguro, S. Tomabechi, and N. Nakamura, \u201cLow Dislocation Density InAlN\/AlN\/GaN Heterostructures Grown on GaN Substrates and the Effects on Gate Leakage Characteristics,\u201d Appl. Phys. Lett., vol.108, no.15, 152109, April 2016. 10.1063\/1.4947004","DOI":"10.1063\/1.4947004"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] Y. Kumazaki, T. Ohki, J. Kotani, S. Ozaki, Y. Niida, Y. Minoura, M. Nishimori, N. Okamoto, M. Sato, N. Nakamura, and K. Watanabe, \u201cOver 80% Power-Added-Efficiency GaN High-Electron-Mobility Transistors on Free-Standing GaN Substrates,\u201d Applied Physics Express, vol.14, no.1, no.0165002, Jan. 2021. 10.35848\/1882-0786\/abc1cc","DOI":"10.35848\/1882-0786\/abc1cc"},{"key":"17","doi-asserted-by":"publisher","unstructured":"[17] C. Mion, J.F. Muth, E.A. Preble, and D. Hanser, \u201cAccurate Dependence of Gallium Nitride Thermal Conductivity on Dislocation Density,\u201d Applied Physics Letters, vol.89, no.9, Art. No. 092123, 2006. 10.1063\/1.2335972","DOI":"10.1063\/1.2335972"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] S. Dellier, T. Dehaene, and E. Peragin, \u201cGaN High-Efficiency S-band Power Amplifier with Power Flexibility from 1 to 10 Watts,\u201d 2014 IEEE Topical Conference on Power Amplifier for Wireless and Radio Applications (PAWR), pp.28-30, 2014. 10.1109\/pawr.2014.6825732","DOI":"10.1109\/PAWR.2014.6825732"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] K. Krishnamurthy, M.J. Poulton, J. Martin, R. Vetury, J.D. Brown, and J.B. Shealy, \u201cA 250W S-band GaN HEMT Amplifier,\u201d 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, pp.1-4, 2007. 10.1109\/csics07.2007.14","DOI":"10.1109\/CSICS07.2007.14"},{"key":"20","doi-asserted-by":"publisher","unstructured":"[20] Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata, and M. Kuzuhara, \u201cImproved Power Performance for a Recessed-Gate AlGaN-GaN Heterojunction FET with a Field-Modulating Plate,\u201d IEEE Trans. Microw. Theory Techn., vol.52, no.11 pp.2536-2540, 2004. 10.1109\/tmtt.2004.837159","DOI":"10.1109\/TMTT.2004.837159"},{"key":"21","doi-asserted-by":"publisher","unstructured":"[21] M.-Y. Cao, K. Zhang, Y.-H. Chen, J.C. Zhang, X.H. Ma, and Y. Hao, \u201cHigh-efficiency S-band Harmonic Tuning GaN Amplifier,\u201d Chin. Phys. B., vol.23, no.3, 2014. 10.1088\/1674-1056\/23\/3\/037305","DOI":"10.1088\/1674-1056\/23\/3\/037305"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] R. Leoni, N. Kolias, P. Jablonski, F. Altunkilic, E. Johnson, and W. Bourcy, \u201cRaytheon High Power Density GaN Technology,\u201d 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017. 10.1109\/csics.2017.8240475","DOI":"10.1109\/CSICS.2017.8240475"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] N. Tuffy and L. Pattison, \u201cA Compact High Efficiency GaN-Si PA Implemented in a Low Cost DFN Package with 71% Fractional Bandwidth,\u201d 2014 IEEE Trans. Microw. Theory Techn.-S International Microwave Symposium (IMS2014), pp.1-3, 2014. 10.1109\/mwsym.2014.6848465","DOI":"10.1109\/MWSYM.2014.6848465"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] B. Pichler, N. Leder, T. Faseth, and H. Arthaber, \u201cDesign of a PWM Driven Continuous Mode Class F Amplifier using Harmonic Load Pull Measurements,\u201d Proceedings of 2014 Mediterranean Microwave Symposium (MM2014), pp.1-3, 2014. 10.1109\/mms.2014.7088942","DOI":"10.1109\/MMS.2014.7088942"},{"key":"25","doi-asserted-by":"crossref","unstructured":"[25] S. Shukla and J. Kitchen, \u201cGaN-on-Si Switched Mode RF Power Amplifiers for Non-Constant Envelope Signals,\u201d 2017 IEEE Topical Conference on RF\/Microwave Power Amplifier for Radio and Wireless Applications (PAWR), pp.88-91, 2017. 10.1109\/pawr.2017.7875581","DOI":"10.1109\/PAWR.2017.7875581"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] F.H. Raab, \u201cClass-D Power Amplifier with RF Pulse-Width Modulation,\u201d 2010 IEEE Trans. Microw. Theory Techn.-S International Microwave Symposium, pp.924-927, 2010. 10.1109\/mwsym.2010.5516001","DOI":"10.1109\/MWSYM.2010.5516001"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] J.M. Ospchuk, \u201cThe Magnetron and the Microwave Oven: A Unique and Lasting Relationship,\u201d 2010 International Conference on the Origins and Evolution of the Cavity Magnetron, pp.46-51, 2010. 10.1109\/cavmag.2010.5565567","DOI":"10.1109\/CAVMAG.2010.5565567"},{"key":"28","unstructured":"[28] L. Setti, M. Audhuy-Peaudecerf, and S. Lefeuvre, \u201cModel of a Microwave Oven with Focalizing Antennas,\u201d Symposium on Antenna Technology and Applied Electromagnetics, pp.423-426, 1994."},{"key":"29","doi-asserted-by":"crossref","unstructured":"[29] H.S. Noh, J.S. Yun, J.M. Kim, and S.I. Jeon, \u201cMicrostrip Patch Array Antenna with High Gain and Wideband for Tx\/Rx Dual Operation at Ku-Band,\u201d IEEE Antennas and Propagation Society Symposium, pp.2480-2483, 2004. 10.1109\/APS.2004.1331876","DOI":"10.1109\/APS.2004.1331876"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] H. Huang, Y. Liu, S. Zhang, and S. Gong, \u201cUniplanar Differentially Driven Ultrawideband polarization Diversity Antenna With Band-Notched Characteristics,\u201d IEEE Antennas and Wireless Propagation Letters, vol.14, pp.563-566, 2015.","DOI":"10.1109\/LAWP.2014.2374332"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E106.C\/10\/E106.C_2022ECP5046\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,18]],"date-time":"2024-10-18T05:13:26Z","timestamp":1729228406000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E106.C\/10\/E106.C_2022ECP5046\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,10,1]]},"references-count":30,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2023]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2022ecp5046","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,10,1]]},"article-number":"2022ECP5046"}}