{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T11:59:23Z","timestamp":1792756763043,"version":"4.5.0"},"reference-count":32,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2024,10,1]]},"DOI":"10.1587\/transele.2023ctp0002","type":"journal-article","created":{"date-parts":[[2024,4,8]],"date-time":"2024-04-08T22:14:21Z","timestamp":1712614461000},"page":"416-425","source":"Crossref","is-referenced-by-count":5,"title":["Comprehensive Analysis of Read Fluctuations in ReRAM CiM by Using Fluctuation Pattern Classifier"],"prefix":"10.1587","volume":"E107.C","author":[{"given":"Ayumu","family":"YAMADA","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering and Information Systems, The University of Tokyo"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhiyuan","family":"HUANG","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems, The University of Tokyo"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Naoko","family":"MISAWA","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems, The University of Tokyo"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chihiro","family":"MATSUI","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems, The University of Tokyo"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ken","family":"TAKEUCHI","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Systems, The University of Tokyo"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] K. Lee, J. Kim, and J. Park, \u201cLow-cost 7T-SRAM Compute-In-Memory design based on bit-line charge-sharing based analog-to-digital conversion,\u201d 2022 IEEE\/ACM International Conference on Computer Aided Design (ICCAD), San Diego, CA, USA, pp.1-8, 2022. 10.1145\/3508352.3549423","DOI":"10.1145\/3508352.3549423"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] A. Yamada, N. Misawa, C. Matsui, and K. Takeuchi, \u201cReRAM CiM Fluctuation Pattern Classification by CNN Trained on Artificially Created Dataset,\u201d 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, pp.1-6, 2023. DOI: 10.1109\/IRPS48203.2023.10118305. 10.1109\/irps48203.2023.10118305","DOI":"10.1109\/IRPS48203.2023.10118305"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] T. Zanotti, F.M. Puglisi, and P. Pavan, \u201cLow-bit precision neural network architecture with high immunity to variability and random telegraph noise based on resistive memories,\u201d 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, pp.1-6, 2021. DOI: 10.1109\/IRPS46558.2021.9405103. 10.1109\/irps46558.2021.9405103","DOI":"10.1109\/IRPS46558.2021.9405103"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] Y. Du, L. Jing, H. Fang, H. Chen, Y. Cai, R. Wang, J. Zhang, and Z. Ji, \u201cExploring the impact of random telegraph noise-induced accuracy loss on resistive RAM-based deep neural network,\u201d IEEE Trans. Electron Devices, vol.67, no.8, pp.3335-3340, Aug. 2020. 10.1109\/ted.2020.3002736","DOI":"10.1109\/TED.2020.3002736"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] D. Joksas, P. Freitas, Z. Chai, W.H. Ng, M. Buckwell, C. Li, W.D. Zhang, Q. Xia, A.J. Kenyon, and A. Mehonic, \u201cCommittee machines\u2014a universal method to deal with non-idealities in memristor-based neural networks,\u201d Nature Communications, vol.11, 4273, 2020. DOI: 10.1038\/s41467-020-18098-0. 10.1038\/s41467-020-18098-0","DOI":"10.1038\/s41467-020-18098-0"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] Z. Chai, P. Freitas, W. Zhang, F. Hatem, J.F. Zhang, J. Marsland, B. Govoreanu, L. Goux, and G.S. Kar, \u201cImpact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network,\u201d IEEE Electron Device Lett., vol.39, no.11, pp.1652-1655, Nov. 2018. DOI: 10.1109\/LED.2018.2869072. 10.1109\/led.2018.2869072","DOI":"10.1109\/LED.2018.2869072"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] J. Kang, Z. Yu, L. Wu, Y. Fang, Z. Wang, Y. Cai, Z. Ji, J. Zhang, R. Wang, Y. Yang, and R. Huang, \u201cTime-dependent variability in RRAM-based analog neuromorphic system for pattern recognition,\u201d 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp.6.4.1-6.4.4, 2017. DOI: 10.1109\/IEDM.2017.8268340. 10.1109\/iedm.2017.8268340","DOI":"10.1109\/IEDM.2017.8268340"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, and S. Yoneda, \u201cNanoscale filaments in Ta-O resistive RAM bit array: microscopy analysis and switching property,\u201d 2019 IEEE 11th International Memory Workshop (IMW), Monterey, CA, USA, pp.1-4, 2019. DOI: 10.1109\/IMW.2019.8739389. 10.1109\/imw.2019.8739389","DOI":"10.1109\/IMW.2019.8739389"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] K. Taoka, N. Misawa, S. Koshino, C. Matsui, and K. Takeuchi, \u201cSimulated annealing algorithm &amp; ReRAM device co-optimization for Computation-in-Memory,\u201d 2021 IEEE International Memory Workshop (IMW), Dresden, Germany, pp.1-4, 2021. DOI: 10.1109\/IMW51353.2021.9439610. 10.1109\/imw51353.2021.9439610","DOI":"10.1109\/IMW51353.2021.9439610"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] M.-F. Chang, J.-M. Hung, P.-C. Chen, and T.-H. Wen, \u201cReliable computing of ReRAM based Compute-in-Memory circuits for AI edge devices,\u201d 2022 IEEE\/ACM International Conference On Computer Aided Design (ICCAD), San Diego, CA, USA, pp.1-6, 2022. DOI: 10.1145\/3508352.3561119. 10.1145\/3508352.3561119","DOI":"10.1145\/3508352.3561119"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] R. Mochida, K. Kouno, Y. Hayata, M. Nakayama, T. Ono, H. Suwa, R. Yasuhara, K. Katayama, T. Mikawa, and Y. Gohou, \u201cA 4M synapses integrated analog ReRAM based 66.5 TOPS\/W neural-network processor with cell current controlled writing and flexible network architecture,\u201d 2018 IEEE Symposium on VLSI Technology, Honolulu, HI, USA, pp.175-176, 2018. DOI: 10.1109\/VLSIT.2018.8510676. 10.1109\/vlsit.2018.8510676","DOI":"10.1109\/VLSIT.2018.8510676"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] X. Sun and S. Yu, \u201cImpact of non-ideal characteristics of resistive synaptic devices on implementing convolutional neural networks,\u201d IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol.9, no.3, pp.570-579, Sept. 2019. DOI: 10.1109\/JETCAS.2019.2933148. 10.1109\/jetcas.2019.2933148","DOI":"10.1109\/JETCAS.2019.2933148"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] V. Joshi, M. Le Gallo, S. Haefeli, I. Boybat, S.R. Nandakumar, C. Piveteau, M. Dazzi, B. Rajendran, A. Sebastian, and E. Eleftheriou, \u201cAccurate deep neural network inference using computational phase-change memory,\u201d Nature Communications, vol.11, 2473, 2020. DOI: 10.1038\/s41467-020-16108-9. 10.1038\/s41467-020-16108-9","DOI":"10.1038\/s41467-020-16108-9"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] C. Matsui, K. Toprasertpong, S. Takagi, and K. Takeuchi, \u201cEnergy-efficient reliable HZO FeFET Computation-in-Memory with local multiply &amp; global accumulate array for source-follower &amp; charge-sharing voltage sensing,\u201d 2021 Symposium on VLSI Technology, Kyoto, Japan, pp.1-2, 2021. 10.23919\/vlsicircuits52068.2021.9492448","DOI":"10.23919\/VLSICircuits52068.2021.9492448"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] C. Matsui, E. Kobayashi, K. Toprasertpong, S. Takagi, and K. Takeuchi, \u201cVersatile FeFET voltage-sensing analog CiM for fast &amp; small-area hyperdimensional computing,\u201d 2022 IEEE International Symposium on Circuits and Systems (ISCAS), Austin, TX, USA, pp.3403-3407, 2022. DOI: 10.1109\/ISCAS48785.2022.9937237. 10.1109\/iscas48785.2022.9937237","DOI":"10.1109\/ISCAS48785.2022.9937237"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] K. Higuchi, C. Matsui, and K. Takeuchi, \u201cInvestigation of memory non-ideality impacts on non-volatile memory based Computation-in-Memory AI inference by comprehensive simulation platform,\u201d 2022 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, pp.1-2, 2022. DOI: 10.1109\/SNW56633.2022.9889067. 10.1109\/snw56633.2022.9889067","DOI":"10.1109\/SNW56633.2022.9889067"},{"key":"17","doi-asserted-by":"crossref","unstructured":"[17] S. Fukuyama, A. Hayakawa, R. Yasuhara, S. Matsuda, H. Kinoshita, and K. Takeuchi, \u201cComprehensive analysis of data-retention and endurance trade-off of 40nm TaOx-based ReRAM,\u201d 2019 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, pp.1-6, 2019. DOI: 10.1109\/IRPS.2019.8720436. 10.1109\/irps.2019.8720436","DOI":"10.1109\/IRPS.2019.8720436"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] F.M. Puglisi, A. Padovani, L. Larcher, and P. Pavan, \u201cRandom telegraph noise: measurement, data analysis, and interpretation,\u201d 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Chengdu, China, pp.1-9, 2017. DOI: 10.1109\/IPFA.2017.8060057. 10.1109\/ipfa.2017.8060057","DOI":"10.1109\/IPFA.2017.8060057"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] S. Vecchi, P. Pavan, and F.M. Puglisi, \u201cA unified framework to explain random telegraph noise complexity in MOSFETs and RRAMs,\u201d 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, pp.1-6, 2023. DOI: 10.1109\/IRPS48203.2023.10117832. 10.1109\/irps48203.2023.10117832","DOI":"10.1109\/IRPS48203.2023.10117832"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] L. Reganaz, D. Deleruyelle, Q. Rafhay, J. Minguet Lopez, N.Castellani, J.F. Nodin, A. Bricalli, G. Piccolboni, G. Molas, and F. Andrieu, \u201cInvestigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability,\u201d 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, pp.1-6, 2023. DOI: 10.1109\/IRPS48203.2023.10117882. 10.1109\/irps48203.2023.10117882","DOI":"10.1109\/IRPS48203.2023.10117882"},{"key":"21","doi-asserted-by":"publisher","unstructured":"[21] C. Wang, H. Wu, B. Gao, T. Zhang, Y. Yang, and H. Qian, \u201cConduction mechanism, dynamics and stability in ReRAMs,\u201d Microelectronic Engineering, vols.187-188, pp.121-133, 2018. DOI: 10.1016\/j.mee.2017.11.003. 10.1016\/j.mee.2017.11.003","DOI":"10.1016\/j.mee.2017.11.003"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] S. Ambrogio, S. Balatti, V. McCaffrey, D. Wang, and D. Ielmini, \u201cImpact of low-frequency noise on read distributions of resistive switching memory (RRAM),\u201d 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA, pp.14.4.1-14.4.4, 2014. DOI: 10.1109\/IEDM.2014.7047051. 10.1109\/iedm.2014.7047051","DOI":"10.1109\/IEDM.2014.7047051"},{"key":"23","doi-asserted-by":"publisher","unstructured":"[23] J. Martin-Martinez, J. Diaz, R. Rodriguez, M. Nafria, and X. Aymerich, \u201cNew weighted time lag method for the analysis of random telegraph signals,\u201d IEEE Electron Device Lett., vol.35, no.4, pp.479-481, April 2014. 10.1109\/led.2014.2304673","DOI":"10.1109\/LED.2014.2304673"},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] G. Gonz\u00e1lez-Cordero, M.B. Gonz\u00e1lez, F. Jim\u00e9nez-Molinos, F.Campabada, and J.B. Rold\u00e1n, \u201cNew method to analyze random telegraph signals in resistive random access memories,\u201d Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.37, no.1, 012203, 2019. 10.1116\/1.5059384","DOI":"10.1116\/1.5059384"},{"key":"25","doi-asserted-by":"publisher","unstructured":"[25] K. Sugawara, H. Shima, M. Takahashi, Y. Naitoh, H. Suga, and H. Akinaga, \u201cLow-frequency-noise spectroscopy of TaOx-based resistive switching memory,\u201d Adv. Electron. Mater., vol.8, no.8,, 2100758, 2022. DOI: 10.1002\/aelm.202100758. 10.1002\/aelm.202100758","DOI":"10.1002\/aelm.202100758"},{"key":"26","doi-asserted-by":"publisher","unstructured":"[26] G. Gonz\u00e1lez-Cordero, M.B. Gonz\u00e1lez, M. Zabala, K. Kalam, A. Tamm, F. Jim\u00e9nez-Molinos, F. Campabadal, and J.B. Rold\u00e1n, \u201cStudy of RTN signals in resistive switching devices based on neural networks,\u201d Solid-State Electronics, vol.183, 108034, 2021. DOI: 10.1016\/j.sse.2021.108034. 10.1016\/j.sse.2021.108034","DOI":"10.1016\/j.sse.2021.108034"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] O.P. Das and S.K. Pandey, \u201cInfluence of conducting filament dimension on the performance of ReRAM device in the SET state,\u201d 2020 IEEE International Symposium on Smart Electronic Systems (iSES), Chennai, India, pp.13-16, 2020. DOI: 10.1109\/iSES50453.2020.00014. 10.1109\/ises50453.2020.00014","DOI":"10.1109\/iSES50453.2020.00014"},{"key":"28","doi-asserted-by":"publisher","unstructured":"[28] Y.M. Strelniker, S. Havlin, R. Berkovits, and A. Frydman, \u201cResistance distribution in the hopping percolation model,\u201d Phys. Rev. E., vol.72, 016121, July 2005. DOI: 10.1103\/PhysRevE.72.016121. 10.1103\/physreve.72.016121","DOI":"10.1103\/PhysRevE.72.016121"},{"key":"29","doi-asserted-by":"publisher","unstructured":"[29] A. Rodriguez-Fernandez, C. Cagli, J. Su\u00f1e, and E. Miranda, \u201cSwitching voltage and time statistics of filamentary conductive paths in HfO<sub>2<\/sub>-Based ReRAM devices,\u201d IEEE Electron Device Lett., vol.39, no.5, pp.656-659, May 2018. DOI: 10.1109\/LED.2018.2822047. 10.1109\/led.2018.2822047","DOI":"10.1109\/LED.2018.2822047"},{"key":"30","doi-asserted-by":"crossref","unstructured":"[30] Z. Wei, R. Yasuhara, K. Katayama, T. Mikawa, T. Ninomiya, and S. Muraoka, \u201cQuantitative method for estimating characteristics of conductive filament in ReRAM,\u201d 2014 IEEE International Symposium on Circuits and Systems (ISCAS), Melbourne, VIC, Australia, pp.842-845, 2014. DOI: 10.1109\/ISCAS.2014.6865267. 10.1109\/iscas.2014.6865267","DOI":"10.1109\/ISCAS.2014.6865267"},{"key":"31","doi-asserted-by":"publisher","unstructured":"[31] Y. Zhao, P. Huang, Z. Chen, C. Liu, H. Li, B. Chen, W. Ma, F. Zhang, B. Gao, X. Liu, and J. Kang, \u201cModeling and optimization of bilayered TaO<i><sub>x<\/sub><\/i> RRAM based on defect evolution and phase transition effects,\u201d IEEE Trans. Electron Devices, vol.63, no.4, pp.1524-1532, April 2016. DOI: 10.1109\/TED.2016.2532470. 10.1109\/ted.2016.2532470","DOI":"10.1109\/TED.2016.2532470"},{"key":"32","doi-asserted-by":"publisher","unstructured":"[32] H.-F. Zhang, B.-Y. Ning, T.-C. Weng, and X.-J. Ning, \u201cWhich phase of Ta<sub>2<\/sub>O<sub>5<\/sub> being of the largest dielectric constant,\u201d Journal of the American Ceramic Society, vol.104, no.12, pp.6413-6423, 2021. 10.1111\/jace.18026","DOI":"10.1111\/jace.18026"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/10\/E107.C_2023CTP0002\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,5]],"date-time":"2024-10-05T03:24:30Z","timestamp":1728098670000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/10\/E107.C_2023CTP0002\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,1]]},"references-count":32,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2023ctp0002","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10,1]]},"article-number":"2023CTP0002"}}