{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,27]],"date-time":"2025-07-27T07:31:27Z","timestamp":1753601487729},"reference-count":20,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"1","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2024,1,1]]},"DOI":"10.1587\/transele.2023ecs6005","type":"journal-article","created":{"date-parts":[[2023,7,9]],"date-time":"2023-07-09T22:12:26Z","timestamp":1688940746000},"page":"18-21","source":"Crossref","is-referenced-by-count":1,"title":["Thermoelectric Effect of Ga-Sn-O Thin Films for Internet-of-Things Application"],"prefix":"10.1587","volume":"E107.C","author":[{"given":"Yuhei","family":"YAMAMOTO","sequence":"first","affiliation":[{"name":"Ryukoku University"}]},{"given":"Naoki","family":"SHIBATA","sequence":"additional","affiliation":[{"name":"Ryukoku University"}]},{"given":"Tokiyoshi","family":"MATSUDA","sequence":"additional","affiliation":[{"name":"Ryukoku University"},{"name":"Kindai University"}]},{"given":"Hidenori","family":"KAWANISHI","sequence":"additional","affiliation":[{"name":"Ryukoku University"},{"name":"Nara Institute of Science and Technology (NAIST)"}]},{"given":"Mutsumi","family":"KIMURA","sequence":"additional","affiliation":[{"name":"Ryukoku University"},{"name":"Nara Institute of Science and Technology (NAIST)"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] Q.H. Zhang, X.Y. Huang, S.Q. Bai, X. Shi, C. Uher, and L.D. Chen, \u201cThermoelectric devices for power generation: Recent progress and future challenges,\u201d Adv. Eng. Mater., vol.18, no.2, pp.194-213, 2016. 10.1002\/adem.201500333","DOI":"10.1002\/adem.201500333"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] R. He, G. Schierning, and K. Nielsch, \u201cThermoelectric devices: A review of devices, architectures, and contact optimization,\u201d Adv. Mater. Technol., vol.3, no.4, 1700256, 2018. 10.1002\/admt.201700256","DOI":"10.1002\/admt.201700256"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] J. Gubbi, R. Buyya, S. Marusic, and M. Palaniswami, \u201cInternet of Things (IoT): A vision, architectural elements, and future directions,\u201d Future Gener. Comput. Syst., vol.29, no.7, pp.1645-1660, 2013. 10.1016\/j.future.2013.01.010","DOI":"10.1016\/j.future.2013.01.010"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] S. Madakam, R. 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O&apos;Quinn, \u201cThin-film thermoelectric devices with high room-temperature figures of merit,\u201d Nature, vol.413, pp.597-602, 2001. 10.1038\/35098012","DOI":"10.1038\/35098012"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] J. Pei, B. Cai, H.-L. Zhuang, and J.-F. Li, \u201cBi<sub>2<\/sub>Te<sub>3<\/sub>-based applied thermoelectric materials: Research advances and new challenges,\u201d Natl. Sci. Rev., vol.7, no.12, pp.1856-1858, 2020. 10.1093\/nsr\/nwaa259","DOI":"10.1093\/nsr\/nwaa259"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] T. Kamiya and H. Hosono, \u201cMaterial characteristics and applications of transparent amorphous oxide semiconductors,\u201d NPG Asia Materials, vol.2, pp.15-22, 2010. 10.1038\/asiamat.2010.5","DOI":"10.1038\/asiamat.2010.5"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, \u201cRoom-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,\u201d Nature, vol.432, pp.488-492, 2004. 10.1038\/nature03090","DOI":"10.1038\/nature03090"},{"key":"17","doi-asserted-by":"publisher","unstructured":"[17] Y. Fujimoto, M. Uenuma, Y. Ishikawa, and Y. Uraoka, \u201cAnalysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration,\u201d AIP Adv., vol.5, no.9, 097209, 2015. 10.1063\/1.4931951","DOI":"10.1063\/1.4931951"},{"key":"18","doi-asserted-by":"publisher","unstructured":"[18] T. Matsuda, K. Umeda, Y. Kato, D. Nishimoto, M. Furuta, and M. Kimura, \u201cRare-metal-free high-performance Ga-Sn-O thin film transistor,\u201d Sci. Rep., vol.7, 44326, 2017. 10.1038\/srep44326","DOI":"10.1038\/srep44326"},{"key":"19","doi-asserted-by":"publisher","unstructured":"[19] S. Sugisaki, T. Matsuda, M. Uenuma, T. Nabatame, Y. Nakashima, T. Imai, Y. Magari, D. Koretomo, M. Furuta, and M. Kimura, \u201cMemristive characteristic of an amorphous Ga-Sn-O thin-film device,\u201d Sci. Rep., vol.9, 2757, 2019. 10.1038\/s41598-019-39549-9","DOI":"10.1038\/s41598-019-39549-9"},{"key":"20","doi-asserted-by":"publisher","unstructured":"[20] T. Matsuda, M. Uenuma, and M. Kimura, \u201cThermoelectric effects of amorphous Ga-Sn-O thin film,\u201d Jpn. J. Appl. Phys., vol.56, no.7, 070309, 2017. 10.7567\/jjap.56.070309","DOI":"10.7567\/JJAP.56.070309"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/1\/E107.C_2023ECS6005\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,13]],"date-time":"2024-05-13T04:54:55Z","timestamp":1715576095000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/1\/E107.C_2023ECS6005\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,1,1]]},"references-count":20,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2023ecs6005","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,1,1]]},"article-number":"2023ECS6005"}}