{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,7]],"date-time":"2026-04-07T05:16:08Z","timestamp":1775538968099,"version":"3.50.1"},"reference-count":17,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"9","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2024,9,1]]},"DOI":"10.1587\/transele.2023fus0001","type":"journal-article","created":{"date-parts":[[2024,5,14]],"date-time":"2024-05-14T22:10:17Z","timestamp":1715724617000},"page":"237-240","source":"Crossref","is-referenced-by-count":3,"title":["Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on n&lt;sup&gt;+&lt;\/sup&gt;-Si by P&lt;sup&gt;+&lt;\/sup&gt; Implantation to Compensate Surface Holes"],"prefix":"10.1587","volume":"E107.C","author":[{"given":"Koji","family":"ABE","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology"}]},{"given":"Mikiya","family":"KUZUTANI","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology"}]},{"given":"Satoki","family":"FURUYA","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology"}]},{"given":"Jose A.","family":"PIEDRA-LORENZANA","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology"}]},{"given":"Takeshi","family":"HIZAWA","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology"}]},{"given":"Yasuhiko","family":"ISHIKAWA","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] J. Michel, J. Liu, and L.C. Kimerling, \u201cHigh-performance Ge-on-Si photodetectors,\u201d Nat. Photon., vol.4, no.8, pp.527-534, Aug. 2010. 10.1038\/nphoton.2010.157","DOI":"10.1038\/nphoton.2010.157"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling, and J. Michel, \u201cHigh performance, waveguide integrated Ge photodetectors,\u201d Opt. Express, vol.15, no.7, pp.3916-3921, April 2007. 10.1364\/OE.15.003916","DOI":"10.1364\/OE.15.003916"},{"key":"3","doi-asserted-by":"publisher","unstructured":"[3] T. Yin, R. Cohen, M.M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M.J. Paniccia, \u201c31GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate,\u201d Opt. Express, vol.15, no.21, pp.13965-13971, Oct. 2007. 10.1364\/oe.15.013965","DOI":"10.1364\/OE.15.013965"},{"key":"4","doi-asserted-by":"publisher","unstructured":"[4] L. Vivien, J. Osmond, J.-M. F\u00e9d\u00e9li, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, \u201c42GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide,\u201d Opt. Express, vol.17, no.8, pp.6252-6257, April 2009. 10.1364\/oe.17.006252","DOI":"10.1364\/OE.17.006252"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] K.-W. Ang, T.-Y. Liow, M.-B. Yu, Q. Fang, J. Song, G.-Q. Lo, and D.-L. Kwong, \u201cLow thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,\u201d IEEE J. Select. Topics Quantum Electron., vol.16, no.1, pp.106-113, Jan.\/Feb. 2010. 10.1109\/jstqe.2009.2025142","DOI":"10.1109\/JSTQE.2009.2025142"},{"key":"6","doi-asserted-by":"publisher","unstructured":"[6] S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, \u201cMonolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,\u201d Opt. Express, vol.18, no.8, pp.8412-8421, April 2010. 10.1364\/oe.18.008412","DOI":"10.1364\/OE.18.008412"},{"key":"7","doi-asserted-by":"publisher","unstructured":"[7] H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, \u201cMonolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,\u201d Opt. Express, vol.20, no.8, pp.9312-9321, April 2012. 10.1364\/oe.20.009312","DOI":"10.1364\/OE.20.009312"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] J. Fujikata, M. Noguchi, K. Kawashita, R. Katamawari, S. Takahashi, M. Nishimura, H. Ono, D. Shimura, H. Takahashi, H. Yaegashi, T. Nakamura, and Y. Ishikawa, \u201cHigh-speed Ge\/Si electro-absorption optical modulator in C-band operation wavelengths,\u201d Opt. Express, vol.28, no.22, pp.33123-33134, Oct. 2020. 10.1364\/oe.405447","DOI":"10.1364\/OE.405447"},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] S. Lischke, A. Peczek, J.S. Morgan, K. Sun, D. Steckler, Y. Yamamoto, F. Kornd\u00f6rfer, C. Mai, S. Marschmeyer, M. Fraschke, A. Kr\u00fcger, A. Beling, and L. Zimmermann, \u201cUltra-fast germanium photodiode with 3-dB bandwidth of 265GHz,\u201d Nat. Photon., vol.15, no.12, pp.925-931, Dec. 2021. 10.1038\/s41566-021-00893-w","DOI":"10.1038\/s41566-021-00893-w"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] T. Umezawa, T. Sakamoto, A. Kanno, N. Yamamoto, and T. Kawanishi, \u201cHigh Speed 2-D Photodetector Array for Space and Mode-Division Multiplexing Fiber Communications,\u201d J. Lightwave Technol., vol.36, no.17, pp.3684-3692, Sept. 2018. 10.1109\/jlt.2018.2846266","DOI":"10.1109\/JLT.2018.2846266"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] C.-L. Chen, S.-W. Chu, B.-J. Chen, Y.-F. Lyu, K.-C. Hsu, C.-F. Liang, S.-S. Su, M.-J. Yang, C.-Y. Chen, S.-L. Cheng, H.-D. Liu, C.-T. Lin, K.P. Petrov, H.-W. Chen, K.-C. Chu, P.-C. Wu, P.-T. Huang, N. Na, and S.-L. Chen, \u201cAn Up-to-1400nm 500MHz Demodulated Time-of-Flight Image Sensor on a Ge-on-Si Platform,\u201d 2020 IEEE Int. Conf. Solid-State Circuits (ISSCC), 5.3, Feb. 2020. 10.1109\/isscc19947.2020.9063107","DOI":"10.1109\/ISSCC19947.2020.9063107"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L.C. Kimerling, \u201cHigh-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration,\u201d IEEE Trans. Electron Devices, vol.48, no.6, pp.1092-1096, June 2001. 10.1109\/16.925232","DOI":"10.1109\/16.925232"},{"key":"13","doi-asserted-by":"publisher","unstructured":"[13] K. Ito, T. Hiraki, T. Tsuchizawa, and Y. Ishikawa, \u201cWaveguide-integrated vertical pin photodiodes of Ge fabricated on p<sup>+<\/sup> and n<sup>+<\/sup> Si-on-insulator layers,\u201d Jpn. J. Appl. Phys., vol.56, no.4S, 04CH05, April 2017. 10.7567\/jjap.56.04ch05","DOI":"10.7567\/JJAP.56.04CH05"},{"key":"14","unstructured":"[14] Y. Ishikawa, K. Ito, K. Noguchi, and T. Hiraki, \u201cNear-infrared pin Photodetectors of Ge Epitaxial Layers for Si Photonics,\u201d IEICE Trans. Electron. C, vol.J101-C, pp.374-380, Oct. 2018."},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] Y. Ishikawa and S. Saito, \u201cGe-on-Si photonic devices for photonic-electronic integration on a Si platform,\u201d IEICE Electron Express, vol.11, no.24, 20142008, Oct. 2014. 10.1587\/elex.11.20142008","DOI":"10.1587\/elex.11.20142008"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] J. Tersoff, \u201cSchottky barrier heights and the continuum of Gap States,\u201d Phys. Rev. Lett., vol.52, no.6, pp.465-468, Feb. 1984. 10.1103\/physrevlett.52.465","DOI":"10.1103\/PhysRevLett.52.465"},{"key":"17","doi-asserted-by":"publisher","unstructured":"[17] H. Hasegawa and H. Ohno, \u201cUnified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interfaces,\u201d J. Vac. Sci. Technol. B, vol.4, no.4, pp.1130-1138, July 1986. 10.1116\/1.583556","DOI":"10.1116\/1.583556"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/9\/E107.C_2023FUS0001\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T03:23:56Z","timestamp":1725679436000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/9\/E107.C_2023FUS0001\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,9,1]]},"references-count":17,"journal-issue":{"issue":"9","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2023fus0001","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,9,1]]},"article-number":"2023FUS0001"}}