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Lv, \u201cA survey on 5G\/6G, AI, and Robotics,\u201d Comput. Electr. Eng., vol.95, p.107372, Sept. 2021, doi: 10.1016\/j.compeleceng.2021.107372. 10.1016\/j.compeleceng.2021.107372","DOI":"10.1016\/j.compeleceng.2021.107372"},{"key":"5","doi-asserted-by":"publisher","unstructured":"[5] K. Samdanis and T. Taleb, \u201cThe Road beyond 5G: A Vision and Insight of the Key Technologies,\u201d IEEE Netw., vol.34, no.2, pp.135-141, March\/April 2020, doi: 10.1109\/MNET.001.1900228. 10.1109\/mnet.001.1900228","DOI":"10.1109\/MNET.001.1900228"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] T. Nakamura, \u201c5G Evolution and 6G,\u201d 2020 IEEE Symposium on VLSI Technology, pp.1-5, Aug. 2020, doi: 10.1109\/VLSITechnology18217.2020.9265094. 10.1109\/vlsitechnology18217.2020.9265094","DOI":"10.1109\/VLSITechnology18217.2020.9265094"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] W. Jiang, B. Han, M.A. Habibi, and H.D. Schotten, \u201cThe Road Towards 6G: A Comprehensive Survey,\u201d IEEE Open J. Commun. Soc., vol.2, pp.334-366, Feb. 2021, doi: 10.1109\/OJCOMS.2021.3057679. 10.36227\/techrxiv.13382765.v2","DOI":"10.1109\/OJCOMS.2021.3057679"},{"key":"8","doi-asserted-by":"publisher","unstructured":"[8] M. Fujishima, \u201cFuture of 300 GHz band wireless communications and their enabler, CMOS transceiver technologies,\u201d Jpn. J. Appl. Phys., vol.60, no.SB, p.SB0803, Feb. 2021, doi: 10.35848\/1347-4065\/abdf24. 10.35848\/1347-4065\/abdf24","DOI":"10.35848\/1347-4065\/abdf24"},{"key":"9","unstructured":"[9] ITU-R, \u201cSharing and compatibility studies between land-mobile, fixed and passive services in the frequency range 275-450 GHz,\u201d Report ITU-R SM.2450-0, June 2019. Available: https:\/\/www.itu.int\/dms_pub\/itu-r\/opb\/rep\/R-REP-SM.2450-2019-PDF-E.pdf"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] H. Hamada, T. Tsutsumi, H. Matsuzaki, T. Fujimura, I. Abdo, A. Shirane, K. Okada, G. Itami, H.-J. Song, H. Sugiyama, and H. Nosaka, \u201c300-GHz-Band 120-Gb\/s Wireless Front-End Based on InP-HEMT PAs and Mixers,\u201d IEEE J. Solid-State Circuits, vol.55, no.9, pp.2316-2335, Sept. 2020, doi: 10.1109\/JSSC.2020.3005818. 10.1109\/jssc.2020.3005818","DOI":"10.1109\/JSSC.2020.3005818"},{"key":"11","doi-asserted-by":"publisher","unstructured":"[11] M.H. Eissa, A. Malignaggi, and D. Kissinger, \u201cA 13.5-dBm 200-255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS,\u201d IEEE Solid-State Circuits Lett., vol.2, no.11, pp.268-271, Nov. 2019, doi: 10.1109\/LSSC.2019.2951689. 10.1109\/lssc.2019.2951689","DOI":"10.1109\/LSSC.2019.2951689"},{"key":"12","doi-asserted-by":"publisher","unstructured":"[12] L. John, A. Tessmann, A. Leuther, P. Neininger, T. Merkle, and T. Zwick, \u201cBroadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology,\u201d IEEE Trans. Terahertz Sci. Technol., vol.10, no.3, pp.309-320, May 2020, doi: 10.1109\/TTHZ.2020.2965808. 10.1109\/tthz.2020.2965808","DOI":"10.1109\/TTHZ.2020.2965808"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] A.S.H. Ahmed, U. Soylu, M. Seo, M. Urteaga, and M.J.W. Rodwell, \u201cA compact H-band Power Amplifier with High Output Power,\u201d 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp.123-126, June 2021, doi: 10.1109\/RFIC51843.2021.9490426. 10.1109\/rfic51843.2021.9490426","DOI":"10.1109\/RFIC51843.2021.9490426"},{"key":"14","doi-asserted-by":"publisher","unstructured":"[14] B. Yun, D.-W. Park, W.-J. Choi, H. Usman Mahmood, and S.-G. Lee, \u201cA 250-GHz 12.6-dB Gain and 3.8-dBm <i>P<\/i><sub>sat<\/sub> Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based <i>G<sub>max<\/sub><\/i>-Core,\u201d IEEE Microw. Wireless Compon. Lett., vol.31, no.3, pp.292-295, March 2021, doi: 10.1109\/LMWC.2020.3046745. 10.1109\/lmwc.2020.3046745","DOI":"10.1109\/LMWC.2020.3046745"},{"key":"15","doi-asserted-by":"publisher","unstructured":"[15] H. Hamada, T. Tsutsumi, A. Pander, H. Matsuzaki, H. Sugiyama, H. Takahashi, and H. Nosaka, \u201c220-325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology,\u201d IEEE Microw. Wirel. Compon. Lett., vol.31, no.6, pp.709-712, June 2021, doi: 10.1109\/LMWC.2021.3061662. 10.1109\/lmwc.2021.3061662","DOI":"10.1109\/LMWC.2021.3061662"},{"key":"16","doi-asserted-by":"publisher","unstructured":"[16] F. Thome and A. Leuther, \u201cA 75-305-GHz Power Amplifier MMIC With 10-14.9-dBm <i>P<\/i><sub>out<\/sub> in a 35-nm InGaAs mHEMT Technology,\u201d IEEE Microw. Wirel. Compon. Lett., vol.31, no.6, pp.741-743, June 2021, doi: 10.1109\/LMWC.2021.3058101. 10.1109\/lmwc.2021.3058101","DOI":"10.1109\/LMWC.2021.3058101"},{"key":"17","doi-asserted-by":"publisher","unstructured":"[17] E. Mohamed, G. Fischer, T. Mausolf, H. R\u00fccker, A. Malignaggi, and G. Kahmen, \u201c220-320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology,\u201d IEEE Microw. Compon. Lett., vol.32, no.11, pp.1335-1338, Nov. 2022, doi: 10.1109\/LMWC.2022.3181407. 10.1109\/lmwc.2022.3181407","DOI":"10.1109\/LMWC.2022.3181407"},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] Z. Griffith, M. Urteaga, and P. Rowell, \u201c180-265 GHz, 17-24 dBm output power broadband, high-gain power amplifiers in InP HBT,\u201d 2017 IEEE MTT-S International Microwave Symposium (IMS), pp.973-976, June 2017, doi: 10.1109\/MWSYM.2017.8058751. 10.1109\/mwsym.2017.8058751","DOI":"10.1109\/MWSYM.2017.8058751"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] A.S.H. Ahmed, A. Simsek, M. Urteaga, and M.J.W. Rodwell, \u201c8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology,\u201d 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp.164-167, Oct. 2018, doi: 10.1109\/BCICTS.2018.8550924. 10.1109\/bcicts.2018.8550924","DOI":"10.1109\/BCICTS.2018.8550924"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] A. Tessmann, A. Leuther, V. Hurm, H. Massler, S. Wagner, M. Kuri, M. Zink, M. Riessle, H.-P. Stulz, M. Schlechtweg, and O. Ambacher, \u201cA Broadband 220-320 GHz Medium Power Amplifier Module,\u201d 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4, Oct. 2014, doi: 10.1109\/CSICS.2014.6978532. 10.1109\/csics.2014.6978532","DOI":"10.1109\/CSICS.2014.6978532"},{"key":"21","doi-asserted-by":"publisher","unstructured":"[21] K.K. Tokgoz, I. Abdo, T. Fujimura, J. Pang, Y. Kawano, T. Iwai, A. Kasamatsu, I. Watanabe, and K. Okada, \u201cA 273-301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS,\u201d IEEE Microw. Wirel. Compon. Lett., vol.29, no.5, pp.342-344, May 2019, doi: 10.1109\/LMWC.2019.2908335. 10.1109\/lmwc.2019.2908335","DOI":"10.1109\/LMWC.2019.2908335"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] Y. Kumazaki, S. Ozaki, N. Okamoto, N. Hara, Y. Nakasha, M. Sato, and T. Ohki, \u201cHigh-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs,\u201d 2022 Asia-Pacific Microwave Conference (APMC), pp.276-278, Nov. 2022, doi: 10.23919\/APMC55665.2022.9999847. 10.23919\/apmc55665.2022.9999847","DOI":"10.23919\/APMC55665.2022.9999847"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] N. Hara, N. Okamoto, K. Imanishi, K. Sawada, T. Takahashi, K. Makiyama, and M. Tanikawa, \u201cImprovement in reliability of InP-based HEMTs by suppressing impact ionization,\u201d Proc. IPRM, pp.615-618, June 2004, doi: 10.1109\/ICIPRM.2004.1442800. 10.1109\/iciprm.2004.1442800","DOI":"10.1109\/ICIPRM.2004.1442800"},{"key":"24","doi-asserted-by":"publisher","unstructured":"[24] T. Takahashi, Y. Kawano, K. Makiyama, S. Shiba, M. Sato, Y. Nakasha, and N. Hara, \u201cEnhancement of <i>f<sub>max<\/sub><\/i> to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs\/InGaAs HEMTs,\u201d IEEE Trans. Electron Devices, vol.64, no.1, pp.89-95, Jan. 2017, doi: 10.1109\/TED.2016.2624899. 10.1109\/ted.2016.2624899","DOI":"10.1109\/TED.2016.2624899"},{"key":"25","doi-asserted-by":"publisher","unstructured":"[25] S. Ozaki, Y. Kumazaki, N. Okamoto, N. Hara, and T. Ohki, \u201cImproved <i>f<\/i><sub>T<\/sub>\/<i>f<sub>max<\/sub><\/i> in wide bias range by steam-annealed ultrathin-Al<sub>2<\/sub>O<sub>3<\/sub> gate dielectrics for InP-based high-electron-mobility transistors,\u201d Appl. Phys. Express, vol.15, no.4, p.041001, March 2022, doi: 10.35848\/1882-0786\/ac5a17. 10.35848\/1882-0786\/ac5a17","DOI":"10.35848\/1882-0786\/ac5a17"},{"key":"26","doi-asserted-by":"publisher","unstructured":"[26] N. Hara, K. Makiyama, T. Takahashi, K. Sawada, T. Arai, T. Ohki, M. Nihei, T. Suzuki, Y. Nakasha, and M. Nishi, \u201cHighly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs,\u201d IEEE Trans. Semicond. Manuf., vol.16, no.3, pp.370-375, Aug. 2003, doi: 10.1109\/TSM.2003.815629. 10.1109\/tsm.2003.815629","DOI":"10.1109\/TSM.2003.815629"},{"key":"27","doi-asserted-by":"crossref","unstructured":"[27] K. Makiyama, T. Takahashi, T. Suzuki, K. Sawada, T. Ohki, M. Nishi, N. Hara, M. Takikawa, \u201cImprovement of circuit-speed of HEMTs IC by reducing the parasitic capacitance,\u201d IEEE International Electron Devices Meeting 2003, pp.30.6.1-30.6.4, 2003, doi: 10.1109\/IEDM.2003.1269384. 10.1109\/iedm.2003.1269384","DOI":"10.1109\/IEDM.2003.1269384"},{"key":"28","doi-asserted-by":"publisher","unstructured":"[28] S. Ozaki, K. Makiyama, T. Ohki, N. Okamoto, S. Kaneki, K. Nishiguchi, N. Hara, and T. Hashizume, \u201cEffects of air annealing on DC characteristics of InAlN\/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al<sub>2<\/sub>O<sub>3<\/sub>,\u201d Appl. Phys. Express, vol.10, no.6, p.061001, May 2017, doi: 10.7567\/APEX.10.061001 10.7567\/apex.10.061001","DOI":"10.7567\/APEX.10.061001"},{"key":"29","doi-asserted-by":"publisher","unstructured":"[29] B. Hughes and P.J. Tasker, \u201cBias dependence of the MODFET intrinsic model elements values at microwave frequencies,\u201d IEEE Trans. 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Urteaga, \u201cA prescription for sub-millimeter-wave transistor characterization,\u201d IEEE Trans. THz Sci. 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