{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T03:39:43Z","timestamp":1774928383583,"version":"3.50.1"},"reference-count":32,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2024,10,1]]},"DOI":"10.1587\/transele.2024mmi0004","type":"journal-article","created":{"date-parts":[[2024,4,8]],"date-time":"2024-04-08T22:14:26Z","timestamp":1712614466000},"page":"292-298","source":"Crossref","is-referenced-by-count":3,"title":["GaN Solid State Power Amplifiers for Microwave Power Transfer and Microwave Heating"],"prefix":"10.1587","volume":"E107.C","author":[{"given":"Koji","family":"YAMANAKA","sequence":"first","affiliation":[{"name":"Mitsubishi Electric Corporation, Information Technology R&D Center"}]},{"given":"Kazuhiro","family":"IYOMASA","sequence":"additional","affiliation":[{"name":"Mitsubishi Electric Corporation, Information Technology R&D Center"}]},{"given":"Takumi","family":"SUGITANI","sequence":"additional","affiliation":[{"name":"Mitsubishi Electric Corporation, Information Technology R&D Center"}]},{"given":"Eigo","family":"KUWATA","sequence":"additional","affiliation":[{"name":"Mitsubishi Electric Corporation, Information Technology R&D Center"}]},{"given":"Shintaro","family":"SHINJO","sequence":"additional","affiliation":[{"name":"Mitsubishi Electric Corporation, Information Technology R&D Center"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] K. Yamanaka, S. Shinjo, Y. Komatsuzaki, S. Sakata, K. Nakatani, and Y. Yamaguchi, \u201cOverview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations,\u201d IEICE Trans. Electron., vol.E104-C, no.10, pp.526-533, Oct. 2021. 10.1587\/transele.2021mmi0008","DOI":"10.1587\/transele.2021MMI0008"},{"key":"2","doi-asserted-by":"publisher","unstructured":"[2] K. Yamanaka, Y. Suzuki, S. Narahashi, T. Wada, M. Kawashima, K. Takei, K. Takagi, A. Honda, Z. LI, L. Zhou, Y. Ohashi, W. Hattori, and Y. Takahashi, \u201cRecent Activities of Japanese Microwave Industry,\u201d IEICE Trans. Electron., vol.E98-C, no.7, pp.621-629, July 2015. 10.1587\/transele.e98.c.621","DOI":"10.1587\/transele.E98.C.621"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] N. Shinohara and S. Kawasaki, \u201cRecent Wireless Power Transmission technologies in Japan for space solar power station\/satellite,\u201d 2009 IEEE Radio and Wireless Symposium, pp.13-15, Jan. 2009. 10.1109\/rws.2009.4957272","DOI":"10.1109\/RWS.2009.4957272"},{"key":"4","unstructured":"[4] https:\/\/mwcc.jp\/en\/"},{"key":"5","unstructured":"[5] https:\/\/www.minicircuits.com\/WebStore\/dashboard.html?model=ZHL-2425-250X%2B"},{"key":"6","unstructured":"[6] K. Yamanaka, Y. Tuyama, H. Ohtsuka, S. Chaki, M. Nakayama, and Y. Hirano, \u201cInternally-matched GaN HEMT High Efficiency Power Amplifier for Space Solar Power Stations,\u201d Proceedings of Asia-Pacific Microwave Conference 2010, WE3A-1, Dec. 2010."},{"key":"7","unstructured":"[7] M. Hangai, Y. Kimoto, K. Harauchi, Y. Yamaguchi, K. Yamanaka, and Y. Homma, \u201c0.15 um GaN amplifier for Space Solar Power Systems by gate length reduction,\u201d IEICE Society conference, Sept. 2015."},{"key":"8","unstructured":"[8] Y. Kamo, T. Kunii, H. Takeuchi, Y. Yamamoto, M. Totsuka, S. Miyakuni, T. Oku, T. Nanjo, H. Chiba, T. Oishi, Y. Abe, Y. Tsuyama, R. Shirahana, H. Ohtsuka, K. Iyomasa, K. Yamanaka, M. Hieda, M. Nakayama, H. Matsuoka, Y. Tarui, T. Ishikawa, T. Takagi, K. Marumoto, and Y. Matsuda, \u201cC-Band 140 W AlGaN\/GaN HEMT with Cat-CVD Technique,\u201d 2005 IEEE MTT-S Int. Microwave Symp. Dig. WE1E-4, June 2005."},{"key":"9","unstructured":"[9] K. Yamanaka, K. Iyomasa, H. Ohtsuka, M. Nakayama, Y. Tsuyama, T. Kunii, Y. Kamo, T. Takagi, \u201cS and C band over 100W GaN HEMT 1chip high power amplifiers with cell division configuration,\u201d 2005 European Gallium Arsenide and Other Semiconductor Application Symposium, pp.241-244, Oct. 2005."},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] Y. Okamoto, A. Wakejima, Y. ando, T. Nakayama, K. Matsunaga, and H. Miyamoto, \u201c100W C-band single-chip GaN FET power amplifier,\u201d Electronics Lett., vol.42, no.5, pp.283-285, March 2006. 10.1049\/el:20064067","DOI":"10.1049\/el:20064067"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] Y. Takada, H. Sakurai, K. Matsushita, K. Masuda, S. Takatsuka, M. Kuraguchi, T. Suzuki, T. Suzuki, M. Hirose, H. Kawasaki, K. Takagi, and K. Tsuda, \u201cC-Band AlGaN\/GaN HEMTs with 170W Output Power,\u201d 2005 Int. Conference on Solid State Devices and Materials, Extended Abstracts, pp.486-487, Sept. 2005. 10.7567\/ssdm.2005.i-6-5l","DOI":"10.7567\/SSDM.2005.I-6-5L"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] H. Shigematsu, Y. Inoue, A. Akasegawa, M. Yamada, S. Masuda, Y. Kamada, A. Yamada, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, K. Joshin, and N. Hara, \u201cC-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE,\u201d 2009 IEEE MTT-S Int.Microwave Symp. Dig., pp.1265-1268, May 2009. 10.1109\/mwsym.2009.5165934","DOI":"10.1109\/MWSYM.2009.5165934"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] T. Yamasaki, Y. Kittaka, H. Minamide, K. Yamauchi, S. Miwa, S. Goto, M. Nakayama, M. Kono, and N. Yoshida, \u201cA 68% Efficiency, C-Band 100W GaN HEMT Amplifier for Space Applications,\u201d 2010 IEEE MTT-S Int. Microwave Symp. Dig. TH3D-1, May 2010. 10.1109\/mwsym.2010.5516252","DOI":"10.1109\/MWSYM.2010.5516252"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] K. Kuroda, R. Ishikawa, and K. Honjo, \u201cHigh-Efficiency GaN HEMT Class-F Amplifier Operating at 5.7 GHz,\u201d Proceedings of the 38th European Microwave Conference, pp.440-443, Oct. 2008. 10.1109\/eumc.2008.4751483","DOI":"10.1109\/EUMC.2008.4751483"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] T. Sugitani, K. Iyomasa, M. Hangai, Y. Kawamura, J. Nishihara, and S. Shinjo, \u201c2.45 GHz ISM-Band 450W High Efficiency GaN Pallet Amplifier for Microwave Heating,\u201d Proceedings of Asia-Pacific Microwave Conference 2018, pp.1621-1623, Dec. 2018. 10.23919\/apmc.2018.8617151","DOI":"10.23919\/APMC.2018.8617151"},{"key":"16","unstructured":"[16] T. Yoshioka, N. Kosaka, M. Hangai, and K. Yamanaka, \u201cMitsubishi Electric's GaN High Power Amplifiers for Civil Applications,\u201d Thailand-Japan MicroWave Nov. 2014."},{"key":"17","unstructured":"[17] RYP24200-20S, \u201c220W, 2.45GHz ISM-band, GaN Pallet Amplifier,\u201d RFHIC, Available"},{"key":"18","unstructured":"[18] F. Platz, O. Bengtsson, A. R\u00e4mer, S.A. Chevtchenko, and W. Heinrich, \u201c2.45 GHz ISM-Band RF-PA Demonstrator for GaN-HEMT optimization,\u201d Proc. German Microwave Conference (GeMIC) 2014, March 2014."},{"key":"19","unstructured":"[19] T. Shi and K. Li, \u201cHigh Power Solid-state Oscillator for Microwave Oven Applications,\u201d 2012 IEEE MTT-S Int. Microw. Symp. Dig., June 2012. 10.1109\/mwsym.2012.6257774"},{"key":"20","unstructured":"[20] MRF24300N, \u201c320W, 2.45GHz ISM-band, RF Power LDMOS Transistor,\u201d NXP, Available"},{"key":"21","unstructured":"[21] BPC2425M9X250, \u201c300W, 2.45GHz ISM-band, LDMOS Pallet Amplifier,\u201d AMPLEON, Available"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] H. Ikeda and Y. Itoh, \u201c2.4GHz-Band High Power and High Efficiency Solid-State Injection-Locked Oscillator Using Imbalanced Coupling Resonator in Feedback Circuit,\u201d Proc. 2017 IEEE MTT-S Int. Microwave Symp. (IMS), pp.447-450, June 2017 10.1109\/mwsym.2017.8058592","DOI":"10.1109\/MWSYM.2017.8058592"},{"key":"23","doi-asserted-by":"publisher","unstructured":"[23] B. Yang, T. Mitani, and N. Shinohara, \u201cExperimental Study on a 5.8 GHz Power-Variable Phase-Controlled Magnetron,\u201d IEICE Trans. Electron., vol.E100-C, no.10, pp.901-907, Oct. 2017. 10.1587\/transele.e100.c.901","DOI":"10.1587\/transele.E100.C.901"},{"key":"24","unstructured":"[24] K. Iyomasa, K. Yamanaka, T. Shiode, H. Mizutani, M. Tsuru, Y. Kawamura, T. Yoshioka, Y. Komatsuzaki, Y. Yamaguchi, K. Nakatani, R. Komaru, and H. Fukumoto, \u201cIndustrial microwave heating device using GaN amplifier module,\u201d IEICE Technical Report, Nov. 2016."},{"key":"25","unstructured":"[25] K. Iyomasa, Y. Kawamura, R. Komaru, Y. Yamaguchi, K. Nakatani, T. Shiode, K. Yamanaka, K. Mori and H. Fukumoto, \u201cDemonstration of Uniform Heating Distribution Control for Microwave Heating Small Reactor with Solid-State Oscillators,\u201d IEICE Technical Report, Oct. 2017."},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] W.S. Lee, K.W. Lee, S.H. Lee, K. Cho, and S. Cho, \u201cA GaN\/Diamond HEMTs with 23 W\/mm for Next Generation High Power RF Application,\u201d 2019 IEEE\/MTT-S International Microwave Symposium, pp.1395-1398, June 2019. 10.1109\/mwsym.2019.8700882","DOI":"10.1109\/MWSYM.2019.8700882"},{"key":"27","unstructured":"[27] https:\/\/www.mitsubishielectric.com\/news\/2019\/0902.html."},{"key":"28","doi-asserted-by":"publisher","unstructured":"[28] M. Kasu, K. Ueda, H. Kageshima, and Y. Yamauchi, \u201cRF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination,\u201d IEICE Trans. Electron., vol.E91-C, no.7, pp.1042-1049, July 2008. 10.1093\/ietele\/e91-c.7.1042","DOI":"10.1093\/ietele\/e91-c.7.1042"},{"key":"29","unstructured":"[29] H. Umezawa, S. Miyamoto, H. Matsudaira, H. Ishizaka, K.-S. Song, M. Tachiki, and H. Kawarada, \u201cRF Performance of Diamond Surface-Channel Field-Effect Transistors,\u201d IEICE Trans. Electron., vol.E86-C, no.10, pp.1949-1954, Oct. 2003."},{"key":"30","doi-asserted-by":"publisher","unstructured":"[30] M. Sato, Y. Kumazaki, N. Okamoto, T. Ohki, N. Kurahashi, M. Nishimori, A. Yamada, J. Kotani, N. Hara, and K. Watanabe, \u201cUniform\/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier,\u201d IEICE Trans. Electron., vol.E106-C, no.10, pp.605-613, Oct. 2023. 10.1587\/transele.2022ecp5046","DOI":"10.1587\/transele.2022ECP5046"},{"key":"31","unstructured":"[31] https:\/\/xtech.nikkei.com\/atcl\/nxt\/column\/18\/02277\/120500008\/?P=3"},{"key":"32","unstructured":"[32] Y. Yamaguchi, S. Shinjo, K. Yamanaka, and T. Oishi, \u201cLarge signal mdoel of GaN-on-Si by taking into account temperature dependence of RF leakage at substrate,\u201d IEICE Society conference, Sept. 2016."}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/10\/E107.C_2024MMI0004\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,5]],"date-time":"2024-10-05T03:25:20Z","timestamp":1728098720000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E107.C\/10\/E107.C_2024MMI0004\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,1]]},"references-count":32,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.2024mmi0004","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10,1]]},"article-number":"2024MMI0004"}}