{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,22]],"date-time":"2025-02-22T05:29:12Z","timestamp":1740202152094,"version":"3.37.3"},"reference-count":17,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"6","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2010]]},"DOI":"10.1587\/transele.e93.c.803","type":"journal-article","created":{"date-parts":[[2010,6,1]],"date-time":"2010-06-01T06:07:20Z","timestamp":1275372440000},"page":"803-811","source":"Crossref","is-referenced-by-count":1,"title":["A 0.13 .MU.m CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation"],"prefix":"10.1587","volume":"E93-C","author":[{"given":"Kenichi","family":"AGAWA","sequence":"first","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Shinichiro","family":"ISHIZUKA","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Hideaki","family":"MAJIMA","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Hiroyuki","family":"KOBAYASHI","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Masayuki","family":"KOIZUMI","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Takeshi","family":"NAGANO","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Makoto","family":"ARAI","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Yutaka","family":"SHIMIZU","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Asuka","family":"MAKI","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Go","family":"URAKAWA","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Tadashi","family":"TERADA","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Nobuyuki","family":"ITOH","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Mototsugu","family":"HAMADA","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Fumie","family":"FUJII","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Tadamasa","family":"KATO","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Sadayuki","family":"YOSHITOMI","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]},{"given":"Nobuaki","family":"OTSUKA","sequence":"additional","affiliation":[{"name":"Semiconductor Company, Toshiba Corporation"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2002.804350"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] H. Ishikuro, M. Hamada, K. Agawa, S. Kousai, H. Kobayashi, D.M. Nguyen, and F. Hatori, “A single-chip CMOS Bluetooth transceiver with 1.5MHz IF and direct modulation transmitter,” ISSCC, pp.94-95, Feb. 2003.","DOI":"10.1109\/ISSCC.2003.1234222"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] Y. Tee, et al., “Design techniques to combat process, temperature and supply variation in Bluetooth RFIC,” RFIC Symp., pp.551-554, June 2003.","DOI":"10.1109\/RFIC.2003.1214006"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2003.821769"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] I. Bhatti, et al., “A fully integrated transformer-based front-end architecture for wireless transceivers,” ISSCC, pp.106-107, Feb. 2005.","DOI":"10.1109\/ISSCC.2005.1493891"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.857417"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] B. Marholev, et al., “A single-chip Bluetooth EDR device in 0.13µm CMOS,” ISSCC, pp.558-559, Feb. 2007.","DOI":"10.1109\/ISSCC.2007.373542"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] K. Agawa, et al., “A −90dBm sensitivity 0.13µm CMOS Bluetooth transceiver operating in wide temperature range,” CICC, pp.655-658, Sept. 2007.","DOI":"10.1109\/CICC.2007.4405817"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] D. Weber, et al., “A single-chip CMOS Radio SoC for v2.1 Bluetooth Applications,” ISSCC, pp.558-559, Feb. 2008.","DOI":"10.1109\/ISSCC.2008.4523208"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] H. Majima, H. Ishikuro, K. Agawa, and M. Hamada, “A 1.2-V CMOS complex bandpass filter with a tunable center frequency,” ESSCIRC, pp.327-330, Sept. 2005.","DOI":"10.1109\/ESSCIR.2005.1541626"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/4.760378"},{"key":"12","unstructured":"[12] B. Razavi, Design of analog CMOS integrated circuits, chapter 11, McGraw-Hill Companies, 2001."},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] D. Miyashita, H. Ishikuro, T. Shimada, T. Tanzawa, S. Kousai, H. Kobayashi, H. Majima, K. Agawa, M. Hamasa, and F. Hatori, “A low-IF CMOS single-chip Bluetooth EDR transmitter with digital I\/Q mismatch trimming circuit,” VLSI Circuits Symp., pp.298-301, June 2005.","DOI":"10.1109\/VLSIC.2005.1469390"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/4.918909"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] M. Khellah, et al., “Bitline leakage compensation (BLC) and leakage reduction (BLR) techniques for 2-3GHz on-chip cache arrays in microprocessors on 90nm logic technology,” VLSI Circuits Symp., pp.262-263, June 2005.","DOI":"10.1109\/VLSIC.2005.1469381"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2001937"},{"key":"17","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2020201"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/www.jstage.jst.go.jp\/article\/transele\/E93.C\/6\/E93.C_6_803\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T11:46:18Z","timestamp":1740138378000},"score":1,"resource":{"primary":{"URL":"http:\/\/www.jstage.jst.go.jp\/article\/transele\/E93.C\/6\/E93.C_6_803\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010]]},"references-count":17,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2010]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.e93.c.803","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"type":"print","value":"0916-8524"},{"type":"electronic","value":"1745-1353"}],"subject":[],"published":{"date-parts":[[2010]]}}}