{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,4]],"date-time":"2025-05-04T04:01:54Z","timestamp":1746331314261,"version":"3.40.4"},"reference-count":40,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"5","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Fundamentals"],"published-print":{"date-parts":[[2025,5,1]]},"DOI":"10.1587\/transfun.2024eap1074","type":"journal-article","created":{"date-parts":[[2024,11,11]],"date-time":"2024-11-11T22:10:37Z","timestamp":1731363037000},"page":"722-735","source":"Crossref","is-referenced-by-count":0,"title":["Maximum Output Power Design on an 85\u2006kHz Class-D Half-Bridge ZVS Inverter with Power-MOSFETs"],"prefix":"10.1587","volume":"E108.A","author":[{"given":"Yi","family":"XIONG","sequence":"first","affiliation":[{"name":"Nagoya University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Senanayake","family":"THILAK","sequence":"additional","affiliation":[{"name":"Nagoya University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Daisuke","family":"ARAI","sequence":"additional","affiliation":[{"name":"Nagoya University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jun","family":"IMAOKA","sequence":"additional","affiliation":[{"name":"Nagoya University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Masayoshi","family":"YAMAMOTO","sequence":"additional","affiliation":[{"name":"Nagoya University"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"publisher","unstructured":"[1] B.K. 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Zhang, Multi-MHz High-Frequency Resonant DC-DC Power Converter, Springer Aug. 2020. 10.1007\/978-981-15-7424-5","DOI":"10.1007\/978-981-15-7424-5"},{"key":"8","unstructured":"[8] W.S. Choi, N.J. Park, D.Y. Lee, and D.S. Hyun, \u201cA new control scheme for a class-D inverter with induction heating jar application by constant switching frequency,\u201d Journal of Power Electronics, vol.5, no.4, pp.272-281, 2005."},{"key":"9","doi-asserted-by":"publisher","unstructured":"[9] M.K. Kazimierczuk and S. Wojciech, \u201cElectronic ballast for fluorescent lamps,\u201d IEEE Trans. Power Electron., vol.8, no.4, pp.386-395, 1993. 10.1109\/63.261008","DOI":"10.1109\/63.261008"},{"key":"10","doi-asserted-by":"publisher","unstructured":"[10] L. Jerry, M. Martelius, E. Roverato, Y. Antonov, T. Nieminen, K. Stadius, L. Anttila, M. Valkama, M. Kosunen, and J. 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Lee, \u201cAn overview of resonant circuits for wireless power transfer,\u201d Energies, vol.10, no.7, p.894, June 2017. 10.3390\/en10070894","DOI":"10.3390\/en10070894"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] N.K. Trung and K. Akatsu, \u201cDesign challenges for 13.56\u2006MHz 10\u2006kW resonant inverter for wireless power transfer systems,\u201d 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019-ECCE Asia), pp.1-7, May 2019. 10.23919\/icpe2019-ecceasia42246.2019.8796928","DOI":"10.23919\/ICPE2019-ECCEAsia42246.2019.8796928"},{"key":"14","unstructured":"[14] M.K. Kazimierczuk and D. Czarkowski, Resonant Power Converters, pp.143-179, John Wiley & Sons, 2012."},{"key":"15","unstructured":"[15] M.K. Kazimierczuk and D. Czarkowski, Resonant Power Converters, pp.180-192, John Wiley & Sons, 2012."},{"key":"16","unstructured":"[16] X. Zhang, N. Ren, Q. Yang, and J. 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Morizane, \u201cA 3\u2006kW single-ended wireless EV charger with a newly developed SiC-VMOSFET,\u201d 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA), pp.1-6, Paris, France, 2018. 10.1109\/icrera.2018.8566866","DOI":"10.1109\/ICRERA.2018.8566866"},{"key":"19","unstructured":"[19] K.A.U. Menon, A. Gungi, and B. Hariharan, \u201cEfficient wireless power transfer using underground relay coils,\u201d Fifth International Conference on Computing, Communications and Networking Technologies (ICCCNT), IEEE, 2014. 10.1109\/icccnt.2014.6963135"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] T. Campi, S. Cruciani, V. De Santis, F. Maradei, and M. Feliziani, \u201cEMC and EMF safety issues in wireless charging system for an electric vehicle (EV),\u201d 2017 International Conference of Electrical and Electronic Technologies for Automotive, IEEE, 2017. 10.23919\/eeta.2017.7993214","DOI":"10.23919\/EETA.2017.7993214"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] Q. Wang, W. Li, J. Kang, and Y. Wang, \u201cElectromagnetic safety of magnetic resonant wireless charging system in electric vehicles,\u201d 2017 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW), pp.1-4, Chongqing, China, 2017. 10.1109\/wow.2017.7959402","DOI":"10.1109\/WoW.2017.7959402"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] Y. Takahashi, K. Hata, T. Imura, and Y. Hori, \u201cComparison of capacitor- and ferrite-less 85\u2006kHz self-resonant coils considering dielectric loss for in-motion wireless power transfer,\u201d IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, pp.5159-5163, Washington, DC, USA, 2018. 10.1109\/iecon.2018.8591164","DOI":"10.1109\/IECON.2018.8591164"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] K. Ueda, Y. Inoue, S. Morimoto, and M. Sanada, \u201cCharacteristic comparison of three-phase wireless power transfer at 85\u2006kHz using a rotating coordinate system,\u201d 2020 23rd International Conference on Electrical Machines and Systems (ICEMS), pp.1779-1783, Hamamatsu, Japan, 2020. 10.23919\/icems50442.2020.9290865","DOI":"10.23919\/ICEMS50442.2020.9290865"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] A. Ong, J. Carr, J. Balda, and A. Mantooth, \u201cA comparison of silicon and silicon carbide MOSFET switching characteristics,\u201d IEEE Region 5 Technical Conference, pp.273-277, April, 2007. 10.1109\/tpsd.2007.4380318","DOI":"10.1109\/TPSD.2007.4380318"},{"key":"25","doi-asserted-by":"publisher","unstructured":"[25] X. Wei, H. Sekiya, T. Nagashima, M.K. Kazimierczuk, and T. Suetsugu, \u201cSteady-state analysis and design of class-D ZVS inverter at any duty ratio,\u201d IEEE Trans. Power Electron., vol.31, no.1, pp.394-405, 2016. 10.1109\/tpel.2015.2400463","DOI":"10.1109\/TPEL.2015.2400463"},{"key":"26","doi-asserted-by":"crossref","unstructured":"[26] P. Chansri, N. Nongnuch, and P. Kritsada, \u201cA high-power LED driver with Class D ZVS series resonant converter,\u201d International Conference on Electrical, Control and Computer Engineering 2011 (InECCE), pp.457-460, IEEE, 2011. 10.1109\/INECCE.2011.5953925","DOI":"10.1109\/INECCE.2011.5953925"},{"key":"27","doi-asserted-by":"publisher","unstructured":"[27] O. 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Sekiya, \u201cThe phase-controlled class-D ZVS inverter with current protection,\u201d IEEE Energy Conversion Congress and Exposition (ECCE), pp.2176-2183, IEEE, 2017. 10.1109\/ecce.2017.8096428","DOI":"10.1109\/ECCE.2017.8096428"},{"key":"30","doi-asserted-by":"publisher","unstructured":"[30] H. Sekiya, T. Watanabe, T. Suetsugu, and M.K. Kazimierczuk, \u201cAnalysis and design of class DE amplifier with nonlinear shunt capacitances,\u201d IEEE Trans. Circuits Syst. I, Reg. Papers, vol.56, no.10, pp.2362-2371, 2009. 10.1109\/tcsi.2009.2015215","DOI":"10.1109\/TCSI.2009.2015215"},{"key":"31","unstructured":"[31] M.K. Kazimierczuk and D. Czarkowski, Resonant Power Converters, pp.382-404, John Wiley & Sons, 2012."},{"key":"32","doi-asserted-by":"publisher","unstructured":"[32] Y. Xiong, S. Thilak, Y. Yonezawa, J. Imaoka, and M. 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Electron Devices, vol.62, no.2, pp.333-338, 2014. 10.1109\/ted.2014.2362657","DOI":"10.1109\/TED.2014.2362657"},{"key":"35","doi-asserted-by":"publisher","unstructured":"[35] H. Sekiya, N. Sagawa, and M.K. Kazimierczuk, \u201cAnalysis of class DE amplifier with nonlinear shunt capacitances at any grading coefficient for high Q and 25% duty ratio,\u201d IEEE Trans. Power Electron., vol.25, no.4, pp.924-932, April 2010. 10.1109\/tpel.2009.2030503","DOI":"10.1109\/TPEL.2009.2030503"},{"key":"36","doi-asserted-by":"publisher","unstructured":"[36] X. Wang, Z. Zhao, K. Li, Y. Zhu, and K. Chen, \u201cAnalytical methodology for loss calculation of SiC MOSFETs,\u201d IEEE J. Emerg. Sel. Topics Power Electron., vol.7, no.1, pp.71-83, March 2019. 10.1109\/jestpe.2018.2863731","DOI":"10.1109\/JESTPE.2018.2863731"},{"key":"37","doi-asserted-by":"publisher","unstructured":"[37] Q. Wu, M. Wang, W. Zhou, X. Wang, G. Liu, and C. You, \u201cAnalytical switching model of a 1200\u2006V SiC MOSFET in a high-frequency series resonant pulsed power converter for plasma generation,\u201d IEEE Access, vol.7, pp.99622-99632, 2019. 10.1109\/access.2019.2930535","DOI":"10.1109\/ACCESS.2019.2930535"},{"key":"38","unstructured":"[39] S. Furukawa, Semiconductor Device, Coronasha, 1982."},{"key":"39","unstructured":"[40] Rohm, Datasheet, R6530ENZ4, https:\/\/fscdn.rohm.com\/en\/products\/databook\/datasheet\/discrete\/transistor\/misfit\/r6530enz4c13-e.pdf"},{"key":"40","unstructured":"[41] Rohm, Datasheet SCT3080AL, https:\/\/rohmfs-rohm-com-cn.oss-cn-shanghai.aliyuncs.com\/en\/products\/databook\/datasheet\/discrete\/mosfet\/sct3080al-e.pdf"}],"container-title":["IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transfun\/E108.A\/5\/E108.A_2024EAP1074\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,3]],"date-time":"2025-05-03T03:29:40Z","timestamp":1746242980000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transfun\/E108.A\/5\/E108.A_2024EAP1074\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,1]]},"references-count":40,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2025]]}},"URL":"https:\/\/doi.org\/10.1587\/transfun.2024eap1074","relation":{},"ISSN":["0916-8508","1745-1337"],"issn-type":[{"type":"print","value":"0916-8508"},{"type":"electronic","value":"1745-1337"}],"subject":[],"published":{"date-parts":[[2025,5,1]]},"article-number":"2024EAP1074"}}