{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,7]],"date-time":"2024-08-07T01:05:19Z","timestamp":1722992719827},"reference-count":31,"publisher":"Fuji Technology Press Ltd.","issue":"2","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IJAT","Int. J. Automation Technol."],"published-print":{"date-parts":[[2018,3,5]]},"abstract":"<jats:p>GaN-based light emitting diodes (LEDs) were epitaxially grown on patterned sapphire substrates (PSSs) to investigate the effectiveness of PSSs for improving the internal quantum efficiency (IQE) and light extraction efficiency (LEE) of the LEDs. Using X-ray diffraction (XRD) and light output measurements, it was observed that the PSSs improved the crystal quality of the LED films and enhanced the LED light intensity. Based on these experimental results, we discuss whether the enhanced light intensity can be attributed to improvements in the IQE or the LEE. The contribution of the IQE improvement to the light intensity was estimated through a comparison of the calculated light emitting area of the LED chip and the measured light output. As a result, it was revealed that the IQE improvement is not the main cause of the increase in the light intensity, indicating that the PSSs mainly improve the LEE. A comparison of the calculated number of bumps on the PSSs and the measured light output of the LEDs suggests that an increase in the number of bumps could affect the improvement in the LEE.<\/jats:p>","DOI":"10.20965\/ijat.2018.p0179","type":"journal-article","created":{"date-parts":[[2018,3,1]],"date-time":"2018-03-01T09:34:28Z","timestamp":1519896868000},"page":"179-186","source":"Crossref","is-referenced-by-count":0,"title":["Patterned Sapphire Substrates for III-Nitride Epitaxial Growth"],"prefix":"10.20965","volume":"12","author":[{"given":"Natsuko","family":"Omiya","sequence":"first","affiliation":[]},{"given":"Hideo","family":"Aida","sequence":"additional","affiliation":[]},{"given":"Yutaka","family":"Kimura","sequence":"additional","affiliation":[]},{"given":"Yuki","family":"Kawamata","sequence":"additional","affiliation":[]},{"given":"Seong-Woo","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Michio","family":"Uneda","sequence":"additional","affiliation":[]},{"name":"Namiki Precision Jewel Co. Ltd. 3-8-22 Shinden, Adachi-ku, Tokyo 123-8511, Japan","sequence":"additional","affiliation":[]},{"name":"Kanazawa Institute of Technology, Nonoichi, Japan","sequence":"additional","affiliation":[]}],"member":"8550","published-online":{"date-parts":[[2018,3,1]]},"reference":[{"key":"key-10.20965\/ijat.2018.p0179-1","doi-asserted-by":"crossref","unstructured":"H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, \u201cP-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),\u201d Jpn. J. Appl. Phys., Vol.28, L2112, 1989.","DOI":"10.1143\/JJAP.28.L2112"},{"key":"key-10.20965\/ijat.2018.p0179-2","doi-asserted-by":"crossref","unstructured":"S. Nakamura, \u201cGaN Growth Using GaN Buffer Layer,\u201d Jpn. J. Appl. Phys., Vol.30, Part 2, 10A, L1705, 1991.","DOI":"10.1143\/JJAP.30.L1705"},{"key":"key-10.20965\/ijat.2018.p0179-3","doi-asserted-by":"crossref","unstructured":"S. W. Kim, H. Aida, and T. Suzuki, \u201cEffect of Substrate Mis-Orientation on GaN Thin Films Grown by MOCVD Under Different Carrier Gas Condition,\u201d Phys. Stat. Sol. (c), Vol.2, Issue 7, pp. 2170-2173, 2005.","DOI":"10.1002\/pssc.200461582"},{"key":"key-10.20965\/ijat.2018.p0179-4","doi-asserted-by":"crossref","unstructured":"S. W. Kim, H. Aida, and T. Suzuki, \u201cThe Effect of a Slight Mis-Orientation Angle of C-Plane Sapphire Substrate on Surface and Crystal Quality of MOCVD Grown GaN Thin Films,\u201d Phys. Stat. Sol. (c), Vol.1, Issue 10, pp. 2483-2486, 2004.","DOI":"10.1002\/pssc.200405028"},{"key":"key-10.20965\/ijat.2018.p0179-5","doi-asserted-by":"crossref","unstructured":"S. W. Kim, H. Aida, and T. Suzuki, \u201cInfluence of Mis-Orientation of C-plane Sapphire Substrate on the Early Stages of MOCVD Growth of GaN Thin Films,\u201d Mater. Res. Soc. Symp. Proc. Vol.831, E3.40, 2011.","DOI":"10.1557\/PROC-831-E3.40"},{"key":"key-10.20965\/ijat.2018.p0179-6","unstructured":"H. Aida, S. W. Kim, K. Sunakawa, N. Aota, K. Koyama, M. Takeuchi, and T. Suzuki, \u201cIII-nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation,\u201d Jpn. J. Appl. Phys., Vol.51, 25502, 2012."},{"key":"key-10.20965\/ijat.2018.p0179-7","unstructured":"H. Aida, D. S. Lee, M. Belousov, and K. Sunakawa, \u201cEffect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy,\u201d Jpn. J. Appl. Phys., Vol.51, 12102, 2012."},{"key":"key-10.20965\/ijat.2018.p0179-8","doi-asserted-by":"crossref","unstructured":"K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, \u201cHigh Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,\u201d Jpn. J. Appl. Phys., Vol.40, L583, 2001.","DOI":"10.1143\/JJAP.40.L583"},{"key":"key-10.20965\/ijat.2018.p0179-9","doi-asserted-by":"crossref","unstructured":"C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, \u201cImproved Light-Output and Electrical Performance of InGaN-Based Light-Emitting Diode by Microroughening of the p-GaN Surface,\u201d J. Appl. Phys., Vol.93, 9383, 2003.","DOI":"10.1063\/1.1571962"},{"key":"key-10.20965\/ijat.2018.p0179-10","doi-asserted-by":"crossref","unstructured":"W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, P. Han, and R. H. Horng, \u201cCharacteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates,\u201d Jpn. J. Appl. Phys., Vol.45, 3430, 2006.","DOI":"10.1143\/JJAP.45.3430"},{"key":"key-10.20965\/ijat.2018.p0179-11","doi-asserted-by":"crossref","unstructured":"S. M. Jeong, S. Kissinger, D. W. Kim, S. J. Lee, J. S. Kim, H. K. Ahn, and C. R. Lee, \u201cCharacteristic Enhancement of the Blue LED Chip by the Growth and Fabrication on Patterned Sapphire (0 0 0 1) Substrate,\u201d J. Cryst. Growth, Vol.312, Issue 2, pp. 258-262, 2010.","DOI":"10.1016\/j.jcrysgro.2009.10.049"},{"key":"key-10.20965\/ijat.2018.p0179-12","doi-asserted-by":"crossref","unstructured":"S. H. Park, H. Jeon, Y. J. Sung, and G. Y. Yeom, \u201cRefractive Sapphire Microlenses Fabricated by Chlorine-Based Inductively Coupled Plasma Etching,\u201d Appl. Opt., Vol.40, Issue 22, pp. 3698-3702, 2001.","DOI":"10.1364\/AO.40.003698"},{"key":"key-10.20965\/ijat.2018.p0179-13","doi-asserted-by":"crossref","unstructured":"C. H. Jeong, D. W. Kim, K. N. Kim, and G. Y. Yeom, \u201cA Study of Sapphire Etching Characteristics Using BCl3-Based Inductively Coupled Plasmas,\u201d Jpn. J. Appl. Phys., Vol.41, 6206, 2002.","DOI":"10.1143\/JJAP.41.6206"},{"key":"key-10.20965\/ijat.2018.p0179-14","doi-asserted-by":"crossref","unstructured":"D. W. Kim, C. H. Jeong, K. N. Kim, H. Y. Lee, H. S. Kim, Y. J. Sung, and G. Y. Yeom, \u201cHigh Rate Sapphire (Al2O3) Etching in Inductively Coupled Plasmas Using Axial External Magnetic Field,\u201d Thin Solid Films, Vol.435, pp. 242-246, 2003.","DOI":"10.1016\/S0040-6090(03)00334-1"},{"key":"key-10.20965\/ijat.2018.p0179-15","unstructured":"D. W. Kim, C. H. Jeong, K. N. Kim, H. Y. Lee, H. S. Kim, and G. Y. Yeom, \u201cHigh Rate Sapphire Etching Using BCl3-Based Inductively Coupled Plasma,\u201d J. Korean. Phys. Soc., Vol.42, S795, 2003."},{"key":"key-10.20965\/ijat.2018.p0179-16","doi-asserted-by":"crossref","unstructured":"J. Cho, H. Kim, J. W. Lee, S. Yoon, C. Sone, Y. Park, and E. Yoon, \u201cSimulation and Fabrication of Highly Efficient InGaN-Based LEDs with Corrugated Interface Substrate,\u201d Phys. Status Solidi C, Vol.2, Issue 7, pp. 2874-2877, 2005.","DOI":"10.1002\/pssc.200461337"},{"key":"key-10.20965\/ijat.2018.p0179-17","doi-asserted-by":"crossref","unstructured":"J. H. Lee, J. T. Oh, J. S. Park, J. W. Kim, Y. C. Kim, J. W. Lee, and H. K. Cho, \u201cImprovement of Luminous Intensity of InGaN Light Emitting Diodes Grown on Hemispherical Patterned Sapphire,\u201d Phys. Status Solidi C, Vol.3, Issue 6, pp. 2169-2173, 2006.","DOI":"10.1002\/pssc.200565308"},{"key":"key-10.20965\/ijat.2018.p0179-18","doi-asserted-by":"crossref","unstructured":"C. C. Wang, H. Ku, C. C. Liu, K. K. Chong, C. I. Hung, Y. H. Wang, and M. P. Houng, \u201cEnhancement of the Light Output Performance for GaN-Based Light-Emitting Diodes by Bottom Pillar Structure,\u201d Appl. Phys. Lett., Vol.91, 121109, 2007.","DOI":"10.1063\/1.2786015"},{"key":"key-10.20965\/ijat.2018.p0179-19","doi-asserted-by":"crossref","unstructured":"J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, \u201cImproved Crystal Quality and Performance of GaN-Based Light-Emitting Diodes by Decreasing the Slanted Angle of Patterned Sapphire,\u201d Appl. Phys. Lett., Vol.96, 051109, 2010.","DOI":"10.1063\/1.3304004"},{"key":"key-10.20965\/ijat.2018.p0179-20","doi-asserted-by":"crossref","unstructured":"T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, \u201cIncrease in the Extraction Efficiency of GaN-Based Light-Emitting Diodes Via Surface Roughening,\u201d Appl. Phys. Lett., Vol.84, 855, 2004.","DOI":"10.1063\/1.1645992"},{"key":"key-10.20965\/ijat.2018.p0179-21","doi-asserted-by":"crossref","unstructured":"W. K. Wang, S. Y. Huang, S. H. Huang, K. S. Wen, D. S. Wuu, and R. H. Horng, \u201cFabrication and Efficiency Improvement of Micropillar InGaN\/Cu Light-Emitting Diodes with Vertical Electrodes,\u201d Appl. Phys. Lett., Vol.88, 181113, 2006.","DOI":"10.1063\/1.2201622"},{"key":"key-10.20965\/ijat.2018.p0179-22","doi-asserted-by":"crossref","unstructured":"K. Ban, J. Yamamoto, K. Takeda, K. Ide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, \u201cInternal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells,\u201d Appl. Phys. Express, Vol.4, 052101, 2011.","DOI":"10.1143\/APEX.4.052101"},{"key":"key-10.20965\/ijat.2018.p0179-23","doi-asserted-by":"crossref","unstructured":"Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, \u201cInternal Quantum Efficiency and Nonradiative Recombination Coefficient of GaInN\/GaN Multiple Quantum Wells with Different Dislocation Densities,\u201d Appl. Phys. Lett., Vol.94, 111109, 2009.","DOI":"10.1063\/1.3100773"},{"key":"key-10.20965\/ijat.2018.p0179-24","doi-asserted-by":"crossref","unstructured":"C. C. Kao, H. C. Kuo, K. F. Yeh, J. T. Chu, W. L. Peng, H. W. Huang, T. C. Lu, and S. C. Wang, \u201cLight-output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching,\u201d IEEE Photon. Technol. Lett., Vol.19, Issue 11, pp. 849-851, 2007.","DOI":"10.1109\/LPT.2007.897455"},{"key":"key-10.20965\/ijat.2018.p0179-25","doi-asserted-by":"crossref","unstructured":"T. Metzger, R. H\u00f6pler, E. Born, O. Ambacher, M. Stutzmann, R. St\u00f6mmer, M. Schuster, H. G\u00f6bel, S. Christiansen, M. Albrecht, and H. P. Strunk, \u201cDefect Structure of Epitaxial GaN Films Determined by Transmission Electron Microscopy and Triple-Axis X-Ray Diffractometry,\u201d Philos. Mag. A, Vol.77, Issue 4, pp. 1013-1025, 1998.","DOI":"10.1080\/01418619808221225"},{"key":"key-10.20965\/ijat.2018.p0179-26","doi-asserted-by":"crossref","unstructured":"H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, \u201cX-Ray Diffraction Analysis of the Defect Structure in Epitaxial GaN,\u201d Appl. Phys. Lett., Vol.77, 2145, 2000.","DOI":"10.1063\/1.1314877"},{"key":"key-10.20965\/ijat.2018.p0179-27","doi-asserted-by":"crossref","unstructured":"A. Sakai, H. Sunakawa, and A. Usui, \u201cDefect Structure in Selectively Grown GaN Films with Low Threading Dislocation Density,\u201d Appl. Phys. Lett., Vol.71, 2259, 1997.","DOI":"10.1063\/1.120044"},{"key":"key-10.20965\/ijat.2018.p0179-28","doi-asserted-by":"crossref","unstructured":"T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano, and S. Sakai, \u201cDirect Evidence that Dislocations are Non-Radiative Recombination Centers in GaN,\u201d Jpn. J. Appl. Phys., Vol.37, L398, 1998.","DOI":"10.1143\/JJAP.37.L398"},{"key":"key-10.20965\/ijat.2018.p0179-29","doi-asserted-by":"crossref","unstructured":"J. J. Chen, Y. K. Su, C. L. Lin, S. M. Chen, W. L. Li, and C. C. Kao, \u201cEnhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates,\u201d IEEE Photon. Technol. Lett., Vol.20, Issue 13, pp. 1193-1195, 2008.","DOI":"10.1109\/LPT.2008.924900"},{"key":"key-10.20965\/ijat.2018.p0179-30","doi-asserted-by":"crossref","unstructured":"M. S. Shur and R. Gaska, \u201cDeep-Ultraviolet Light-Emitting Diodes,\u201d IEEE Trans. Electron Devices, Vol.57, Issue 1, pp. 12-25, 2010.","DOI":"10.1109\/TED.2009.2033768"},{"key":"key-10.20965\/ijat.2018.p0179-31","doi-asserted-by":"crossref","unstructured":"M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, \u201cDislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy,\u201d Jpn. J. Appl. Phys., Vol.46, 1458, 2007.","DOI":"10.1143\/JJAP.46.1458"}],"container-title":["International Journal of Automation Technology"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.fujipress.jp\/main\/wp-content\/themes\/Fujipress\/phyosetsu.php?ppno=IJATE001200020006","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,12]],"date-time":"2019-10-12T02:42:36Z","timestamp":1570848156000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.fujipress.jp\/ijat\/au\/ijate001200020179"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3,1]]},"references-count":31,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2018,3,1]]},"published-print":{"date-parts":[[2018,3,5]]}},"URL":"https:\/\/doi.org\/10.20965\/ijat.2018.p0179","relation":{},"ISSN":["1883-8022","1881-7629"],"issn-type":[{"type":"electronic","value":"1883-8022"},{"type":"print","value":"1881-7629"}],"subject":[],"published":{"date-parts":[[2018,3,1]]}}}