{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,11]],"date-time":"2026-06-11T16:24:44Z","timestamp":1781195084290,"version":"3.54.1"},"reference-count":20,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.23919\/date.2018.8342016","type":"proceedings-article","created":{"date-parts":[[2018,4,23]],"date-time":"2018-04-23T19:20:11Z","timestamp":1524511211000},"page":"265-268","source":"Crossref","is-referenced-by-count":6,"title":["Parametric failure modeling and yield analysis for STT-MRAM"],"prefix":"10.23919","author":[{"given":"Sarath Mohanachandran","family":"Nair","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rajendra","family":"Bishnoi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mehdi B.","family":"Tahoori","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1145\/1391469.1391540"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.3390\/ma9010041"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2198825"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2011.5749716"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2010.2043694"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1145\/775832.775920"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1989.572629"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2007.913186"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2017.7927221"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/43\/21\/215001"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2016.2547779"},{"key":"ref3","first-page":"900","article-title":"Statistical modeling and simulation of threshold variation under dopant luctuations and line-edge roughness","author":"ye","year":"2008","journal-title":"DAC"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2016.2619484"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2014.2374291"},{"key":"ref8","first-page":"81","article-title":"An integrated ECC and redundancy repair scheme for memory reliability enhancement","author":"su","year":"2005","journal-title":"DFT"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-9551-3_2"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1145\/2463585.2463589"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MC.2003.1250885"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2412960"},{"key":"ref20","first-page":"54","article-title":"STTRAM scaling and retention failure","volume":"17","author":"naeimi","year":"2013","journal-title":"Intel Technology Journal"}],"event":{"name":"2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)","location":"Dresden","start":{"date-parts":[[2018,3,19]]},"end":{"date-parts":[[2018,3,23]]}},"container-title":["2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8337149\/8341968\/08342016.pdf?arnumber=8342016","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,2,25]],"date-time":"2019-02-25T21:13:03Z","timestamp":1551129183000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8342016\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":20,"URL":"https:\/\/doi.org\/10.23919\/date.2018.8342016","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}