{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,5]],"date-time":"2024-09-05T18:56:38Z","timestamp":1725562598812},"reference-count":21,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,5]]},"DOI":"10.23919\/mipro.2018.8400011","type":"proceedings-article","created":{"date-parts":[[2018,7,30]],"date-time":"2018-07-30T17:43:43Z","timestamp":1532972623000},"page":"0054-0059","source":"Crossref","is-referenced-by-count":0,"title":["Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions"],"prefix":"10.23919","author":[{"given":"J. J.","family":"Cheng","sequence":"first","affiliation":[]},{"given":"P.","family":"Li","sequence":"additional","affiliation":[]},{"given":"W. Z.","family":"Chen","sequence":"additional","affiliation":[]},{"given":"B.","family":"Yi","sequence":"additional","affiliation":[]},{"given":"X. B.","family":"Chen","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"149","article-title":"A proposal of LDMOS using deep trench poly field plate","author":"park","year":"2015","journal-title":"IEEE Int Symp Power Semiconductor Devices and ICs"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2466694"},{"journal-title":"Semiconductor power devices with alternation conductivity type high-voltage breakdown regions","year":"1993","author":"chen","key":"ref12"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(98)00065-2"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2493080"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1049\/mnl.2016.0331"},{"key":"ref16","first-page":"279","article-title":"Novel LDMOS with assisted deplete-substrate layer consist of super junction under the drain","author":"yuan","year":"2017","journal-title":"IEEE Int Symp Power Semiconductor Devices and ICs"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2751571"},{"journal-title":"Two Dimensional Device Simulation Program User s Manual","year":"2010","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/MIXDES.2015.7208583"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISVDAT.2015.7208084"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2655149"},{"key":"ref6","first-page":"329","article-title":"Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept","author":"zhang","year":"2013","journal-title":"IEEE Int Symp Power Semiconductor Devices and ICs"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1049\/el.2012.1589"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2014.6856008"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2349553"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2706021"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2242095"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1049\/el.2014.3443"},{"journal-title":"CYCLOTENE 4000 Series Advanced Electronic Resins (Photo BCB)","year":"2009","key":"ref20"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2008.4538959"}],"event":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","start":{"date-parts":[[2018,5,21]]},"location":"Opatija","end":{"date-parts":[[2018,5,25]]}},"container-title":["2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8392484\/8399814\/08400011.pdf?arnumber=8400011","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T03:30:50Z","timestamp":1598239850000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8400011\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5]]},"references-count":21,"URL":"https:\/\/doi.org\/10.23919\/mipro.2018.8400011","relation":{},"subject":[],"published":{"date-parts":[[2018,5]]}}}