{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,31]],"date-time":"2024-10-31T03:12:14Z","timestamp":1730344334227,"version":"3.28.0"},"reference-count":8,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,6]]},"DOI":"10.23919\/mixdes.2017.8005168","type":"proceedings-article","created":{"date-parts":[[2017,8,29]],"date-time":"2017-08-29T18:42:47Z","timestamp":1504032167000},"page":"127-131","source":"Crossref","is-referenced-by-count":1,"title":["Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs"],"prefix":"10.23919","author":[{"given":"Michael","family":"Graef","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Franziska","family":"Hain","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabian","family":"Hosenfeld","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabian","family":"Horst","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atieh","family":"Farokhnejad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Benjamin","family":"Iniguez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Kloes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00138-X"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2181153"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2016.7440053"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2003.1233645"},{"key":"ref8","volume":"1","author":"weber","year":"1950","journal-title":"Electromagnetic Fields"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.11.023"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2020321"},{"key":"ref1","first-page":"3","article-title":"A 14nm logic technology featuring 2 nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 ?m2 SRAM cell size","author":"natarajan","year":"2014","journal-title":"Electron Devices Meeting (IEDM) 2014 IEEE International"}],"event":{"name":"2017 MIXDES - 24th International Conference \"Mixed Design of Integrated Circuits and Systems\"","start":{"date-parts":[[2017,6,22]]},"location":"Bydgoszcz, Poland","end":{"date-parts":[[2017,6,24]]}},"container-title":["2017 MIXDES - 24th International Conference \"Mixed Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7999199\/8004577\/08005168.pdf?arnumber=8005168","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,12,13]],"date-time":"2017-12-13T19:30:15Z","timestamp":1513193415000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8005168\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,6]]},"references-count":8,"URL":"https:\/\/doi.org\/10.23919\/mixdes.2017.8005168","relation":{},"subject":[],"published":{"date-parts":[[2017,6]]}}}