{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,31]],"date-time":"2024-10-31T03:12:54Z","timestamp":1730344374944,"version":"3.28.0"},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,6]]},"DOI":"10.23919\/mixdes.2018.8436757","type":"proceedings-article","created":{"date-parts":[[2018,8,17]],"date-time":"2018-08-17T20:14:20Z","timestamp":1534536860000},"page":"243-247","source":"Crossref","is-referenced-by-count":2,"title":["Investigation of the Influence of Thermal Phenomena on Dynamic Parameters of the IGBT"],"prefix":"10.23919","author":[{"given":"Pawel","family":"Gorecki","sequence":"first","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2006.872382"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1515\/mms-2015-0036"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1108\/MI-11-2016-0082"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2011.2178433"},{"journal-title":"MCP1405 4 5A Dual High-Speed Power MOSFET Drivers Datasheet Microchip","year":"2007","key":"ref14"},{"journal-title":"IRG4PC40UD Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode Datasheet International Rectifier","year":"1997","key":"ref15"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/28.287517"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1002\/9780470694640"},{"journal-title":"Polowe polprzewodnikowe przyrzady duzej mocy Wydaw Naukowo-Techniczne Warszawa","year":"1995","author":"napieralski","key":"ref6"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2222415"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2009.2036850"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/MIXDES.2015.7208588"},{"journal-title":"Power Electronic Handbook","year":"2007","author":"rashid","key":"ref2"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1007\/b100747"},{"key":"ref9","first-page":"71","article-title":"Influence of Thermal Phenomena on de Characteristics of the IGBT","volume":"64","author":"g6recki","year":"2018","journal-title":"International Journal of Electronics and Telecommunications"}],"event":{"name":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","start":{"date-parts":[[2018,6,21]]},"location":"Gdynia, Poland","end":{"date-parts":[[2018,6,23]]}},"container-title":["2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8422065\/8436585\/08436757.pdf?arnumber=8436757","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T01:13:29Z","timestamp":1598231609000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8436757\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,6]]},"references-count":15,"URL":"https:\/\/doi.org\/10.23919\/mixdes.2018.8436757","relation":{},"subject":[],"published":{"date-parts":[[2018,6]]}}}