{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,31]],"date-time":"2024-10-31T03:13:27Z","timestamp":1730344407135,"version":"3.28.0"},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.23919\/mixdes.2019.8787095","type":"proceedings-article","created":{"date-parts":[[2019,8,5]],"date-time":"2019-08-05T21:07:03Z","timestamp":1565039223000},"page":"81-86","source":"Crossref","is-referenced-by-count":4,"title":["Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models"],"prefix":"10.23919","author":[{"given":"Fabian","family":"Horst","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atieh","family":"Farokhnejad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Benjamin","family":"Iniguez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Kloes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.1654509"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"1258","DOI":"10.1109\/16.842971","article-title":"modeling of silc based on electron and hole tunneling. i. transient effects","volume":"47","author":"ielmini","year":"2000","journal-title":"IEEE Transactions on Electron Devices"},{"journal-title":"Virtuoso Analog Design Environment GXL","year":"2013","key":"ref12"},{"journal-title":"TCAD Sentaurus","year":"2018","key":"ref13"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.08.020"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/16.121690"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/EDTM.2017.7947547"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2603468"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/S0079-6727(01)00003-9"},{"key":"ref8","first-page":"47","article-title":"Area equivalent WKB compact modeling approach for tunneling probability in hetero-junction TFETs including ambipolar behavior","volume":"9","author":"horst","year":"2018","journal-title":"International Journal of Microelectronics and Computer Science"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2856891"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2016.7548413"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2014.2326622"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.23919\/MIXDES.2018.8436770"}],"event":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","start":{"date-parts":[[2019,6,27]]},"location":"Rzesz\u00f3w, Poland","end":{"date-parts":[[2019,6,29]]}},"container-title":["2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\""],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8777447\/8786996\/08787095.pdf?arnumber=8787095","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,2]],"date-time":"2019-09-02T21:25:11Z","timestamp":1567459511000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8787095\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6]]},"references-count":14,"URL":"https:\/\/doi.org\/10.23919\/mixdes.2019.8787095","relation":{},"subject":[],"published":{"date-parts":[[2019,6]]}}}