{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,7]],"date-time":"2026-07-07T10:12:46Z","timestamp":1783419166838,"version":"3.54.6"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,6,11]]},"DOI":"10.23919\/vlsitechnologyandcir57934.2023.10185213","type":"proceedings-article","created":{"date-parts":[[2023,7,24]],"date-time":"2023-07-24T17:36:33Z","timestamp":1690220193000},"page":"1-2","source":"Crossref","is-referenced-by-count":8,"title":["Simple Binary In-Te OTS with Sub-nm HfO\u2093 Buffer Layer for 3D Vertical X-point Memory Applications"],"prefix":"10.23919","author":[{"given":"Sanghyun","family":"Ban","sequence":"first","affiliation":[{"name":"R&D Division, SK-Hynix,Icheon,Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jangseop","family":"Lee","sequence":"additional","affiliation":[{"name":"Pohang University of Science and Technology (POSTECH),Dept. of Mat. Sci. and Eng.,Pohang,Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Taehoon","family":"Kim","sequence":"additional","affiliation":[{"name":"R&D Division, SK-Hynix,Icheon,Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyunsang","family":"Hwang","sequence":"additional","affiliation":[{"name":"Pohang University of Science and Technology (POSTECH),Dept. of Mat. Sci. and Eng.,Pohang,Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref13","first-page":"209","author":"avasarala","year":"2018","journal-title":"VLSI"},{"key":"ref12","first-page":"35.2.1","author":"hatem","year":"2019","journal-title":"IEDM"},{"key":"ref15","first-page":"35.1.1","author":"garbin","year":"2019","journal-title":"IEDM"},{"key":"ref14","first-page":"5.1.1","author":"yamaguchi","year":"2022","journal-title":"IEDM"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"643","DOI":"10.1109\/LED.2022.3152207","volume":"43","author":"ban","year":"2022","journal-title":"Electron Device Lett"},{"key":"ref10","first-page":"207","author":"yoo","year":"2018","journal-title":"IEDM"},{"key":"ref2","first-page":"37.1.1","author":"kim","year":"2018","journal-title":"IEDM"},{"key":"ref1","first-page":"24.1.1","author":"fazio","year":"2020","journal-title":"IEDM"},{"key":"ref16","first-page":"28.5.1","author":"ambrosi","year":"2021","journal-title":"IEDM"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/5.0034847"},{"key":"ref7","first-page":"2.6.1","author":"lee","year":"2012","journal-title":"IEDM"},{"key":"ref9","doi-asserted-by":"crossref","DOI":"10.1063\/1.2773688","volume":"102","author":"ielmini","year":"2007","journal-title":"J Appl Phys"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"3785","DOI":"10.1103\/PhysRevB.11.3785","volume":"11","author":"finkman","year":"1975","journal-title":"Phys Rev B"},{"key":"ref3","first-page":"1","author":"yoo","year":"2022","journal-title":"IMW"},{"key":"ref6","first-page":"1","author":"lopez","year":"2021","journal-title":"IMW"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"627","DOI":"10.1002\/pssb.19660150224","volume":"15","author":"tauc","year":"1966","journal-title":"Phys Status Solidi B"}],"event":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Kyoto, Japan","start":{"date-parts":[[2023,6,11]]},"end":{"date-parts":[[2023,6,16]]}},"container-title":["2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10185199\/10185158\/10185213.pdf?arnumber=10185213","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,24]],"date-time":"2023-07-24T21:07:31Z","timestamp":1690232851000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10185213\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6,11]]},"references-count":16,"URL":"https:\/\/doi.org\/10.23919\/vlsitechnologyandcir57934.2023.10185213","relation":{},"subject":[],"published":{"date-parts":[[2023,6,11]]}}}