{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:09:44Z","timestamp":1774966184753,"version":"3.50.1"},"reference-count":12,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,6,11]]},"DOI":"10.23919\/vlsitechnologyandcir57934.2023.10185312","type":"proceedings-article","created":{"date-parts":[[2023,7,24]],"date-time":"2023-07-24T17:36:33Z","timestamp":1690220193000},"page":"1-2","source":"Crossref","is-referenced-by-count":30,"title":["First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON\/OFF Ratio Exceeding 10<sup>11<\/sup>, SS of 68 mV\/dec, Normal-off Operation and High Positive Gate Bias Stability"],"prefix":"10.23919","author":[{"given":"Jie","family":"Zhang","sequence":"first","affiliation":[{"name":"Purdue University, West Lafayette, IN,Elmore Family School of Electrical and Computer Engineering,U.S.A.,47907"}]},{"given":"Zhuocheng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Purdue University, West Lafayette, IN,Elmore Family School of Electrical and Computer Engineering,U.S.A.,47907"}]},{"given":"Zehao","family":"Lin","sequence":"additional","affiliation":[{"name":"Purdue University, West Lafayette, IN,Elmore Family School of Electrical and Computer Engineering,U.S.A.,47907"}]},{"given":"Ke","family":"Xu","sequence":"additional","affiliation":[{"name":"Purdue University,School of Materials Engineering,West Lafayette,IN,U.S.A."}]},{"given":"Hongyi","family":"Dou","sequence":"additional","affiliation":[{"name":"Purdue University,School of Materials Engineering,West Lafayette,IN,U.S.A."}]},{"given":"Bo","family":"Yang","sequence":"additional","affiliation":[{"name":"Purdue University,School of Materials Engineering,West Lafayette,IN,U.S.A."}]},{"given":"Xinghang","family":"Zhang","sequence":"additional","affiliation":[{"name":"Purdue University,School of Materials Engineering,West Lafayette,IN,U.S.A."}]},{"given":"Haiyan","family":"Wang","sequence":"additional","affiliation":[{"name":"Purdue University,School of Materials Engineering,West Lafayette,IN,U.S.A."}]},{"given":"Peide D.","family":"Ye","sequence":"additional","affiliation":[{"name":"Purdue University, West Lafayette, IN,Elmore Family School of Electrical and Computer Engineering,U.S.A.,47907"}]}],"member":"263","reference":[{"key":"ref1","first-page":"21.1-1","volume-title":"IEDM","author":"Liu","year":"2021"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref7","first-page":"500","volume-title":"Nano Lett","volume":"21","author":"Si","year":"2021"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref9","first-page":"273","volume-title":"EDL","volume":"44","author":"Zhang","year":"2023"},{"key":"ref10","first-page":"31.1-1","volume-title":"IEDM","author":"Chasin","year":"2021"},{"key":"ref11","first-page":"580","volume-title":"EDL","volume":"38","author":"Choi","year":"2017"},{"key":"ref12","first-page":"4.3.1","volume-title":"IEDM","author":"Zheng","year":"2022"}],"event":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Kyoto, Japan","start":{"date-parts":[[2023,6,11]]},"end":{"date-parts":[[2023,6,16]]}},"container-title":["2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10185199\/10185158\/10185312.pdf?arnumber=10185312","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,1]],"date-time":"2024-03-01T14:42:08Z","timestamp":1709304128000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10185312\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6,11]]},"references-count":12,"URL":"https:\/\/doi.org\/10.23919\/vlsitechnologyandcir57934.2023.10185312","relation":{},"subject":[],"published":{"date-parts":[[2023,6,11]]}}}