{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,11]],"date-time":"2026-04-11T11:45:31Z","timestamp":1775907931219,"version":"3.50.1"},"reference-count":2,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,6,11]]},"DOI":"10.23919\/vlsitechnologyandcir57934.2023.10185401","type":"proceedings-article","created":{"date-parts":[[2023,7,24]],"date-time":"2023-07-24T17:36:33Z","timestamp":1690220193000},"page":"1-2","source":"Crossref","is-referenced-by-count":9,"title":["Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory"],"prefix":"10.23919","author":[{"given":"N.","family":"Ishihara","sequence":"first","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"Y.","family":"Shimada","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"T.","family":"Ochi","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research & Development, Kioxia Corporation"}]},{"given":"S.","family":"Seto","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"H.","family":"Matsuo","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"H.","family":"Yamashita","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"S.","family":"Morita","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"M.","family":"Ukishima","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"K.","family":"Uejima","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"Y.","family":"Arayashiki","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"S.","family":"Kajiwara","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"A.","family":"Murayama","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"K.","family":"Nishiyama","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"K.","family":"Sugimae","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"S.","family":"Mori","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"Y.","family":"Saito","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"T.","family":"Shundo","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"A.","family":"Maeda","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"H.","family":"Kamiya","sequence":"additional","affiliation":[{"name":"Western Digital Corporation, 800, Yamanoissiki-Cho, Yokkaichi, Mie-Pref,Japan,512-8550"}]},{"given":"Y.","family":"Uchiyama","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"M.","family":"Fujiwara","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research & Development, Kioxia Corporation"}]},{"given":"F.","family":"Aiso","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"K.","family":"Sekine","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]},{"given":"N.","family":"Ohtani","sequence":"additional","affiliation":[{"name":"Advanced Memory Development Center"}]}],"member":"263","reference":[{"key":"ref2","first-page":"211","author":"ramesh","year":"2021","journal-title":"IEDM Tech Dig"},{"key":"ref1","first-page":"650","author":"miyagawa","year":"2019","journal-title":"IEDM Tech Dig"}],"event":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Kyoto, Japan","start":{"date-parts":[[2023,6,11]]},"end":{"date-parts":[[2023,6,16]]}},"container-title":["2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10185199\/10185158\/10185401.pdf?arnumber=10185401","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,7,24]],"date-time":"2023-07-24T21:23:31Z","timestamp":1690233811000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10185401\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6,11]]},"references-count":2,"URL":"https:\/\/doi.org\/10.23919\/vlsitechnologyandcir57934.2023.10185401","relation":{},"subject":[],"published":{"date-parts":[[2023,6,11]]}}}