{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T15:19:09Z","timestamp":1774365549344,"version":"3.50.1"},"reference-count":5,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,6,11]],"date-time":"2023-06-11T00:00:00Z","timestamp":1686441600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,6,11]]},"DOI":"10.23919\/vlsitechnologyandcir57934.2023.10185427","type":"proceedings-article","created":{"date-parts":[[2023,7,24]],"date-time":"2023-07-24T17:36:33Z","timestamp":1690220193000},"page":"1-2","source":"Crossref","is-referenced-by-count":19,"title":["A 135 GBps\/Gbit 0.66 pJ\/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV"],"prefix":"10.23919","author":[{"given":"Song","family":"Wang","sequence":"first","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Bing","family":"Yu","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Wenwu","family":"Xiao","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Fujun","family":"Bai","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Xiaodong","family":"Long","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Liang","family":"Bai","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Xuerong","family":"Jia","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Fengguo","family":"Zuo","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Jie","family":"Tan","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Yixin","family":"Guo","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Peng","family":"Sun","sequence":"additional","affiliation":[{"name":"Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.,,Wuhan,China"}]},{"given":"Jun","family":"Zhou","sequence":"additional","affiliation":[{"name":"Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.,,Wuhan,China"}]},{"given":"Qiong","family":"Zhan","sequence":"additional","affiliation":[{"name":"Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.,,Wuhan,China"}]},{"given":"Sheng","family":"Hu","sequence":"additional","affiliation":[{"name":"Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.,,Wuhan,China"}]},{"given":"Yu","family":"Zhou","sequence":"additional","affiliation":[{"name":"Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.,,Wuhan,China"}]},{"given":"Yi","family":"Kang","sequence":"additional","affiliation":[{"name":"University of Science and Technology of China,Hefei,China"}]},{"given":"Qiwei","family":"Ren","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]},{"given":"Xiping","family":"Jiang","sequence":"additional","affiliation":[{"name":"Xi’an UniIC Semiconductors,Xi’an,China"}]}],"member":"263","reference":[{"key":"ref1","first-page":"210","volume-title":"IEEE ISSCC","author":"Hwang","year":"2018"},{"key":"ref2","first-page":"334","volume-title":"IEEE ISSCC","author":"Lee","year":"2020"},{"key":"ref3","first-page":"444","volume-title":"IEEE ISSCC","author":"Park","year":"2022"},{"key":"ref4","first-page":"1","volume-title":"IEEE VLSI","author":"Tsai","year":"2020"},{"key":"ref5","first-page":"6.6. 1","volume-title":"IEEE IEDM","author":"Bai","year":"2020"}],"event":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Kyoto, Japan","start":{"date-parts":[[2023,6,11]]},"end":{"date-parts":[[2023,6,16]]}},"container-title":["2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10185199\/10185158\/10185427.pdf?arnumber=10185427","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,13]],"date-time":"2024-03-13T20:34:24Z","timestamp":1710362064000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10185427\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6,11]]},"references-count":5,"URL":"https:\/\/doi.org\/10.23919\/vlsitechnologyandcir57934.2023.10185427","relation":{},"subject":[],"published":{"date-parts":[[2023,6,11]]}}}