{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,2]],"date-time":"2026-05-02T06:29:50Z","timestamp":1777703390299,"version":"3.51.4"},"reference-count":11,"publisher":"SAGE Publications","issue":"5","license":[{"start":{"date-parts":[[2015,7,27]],"date-time":"2015-07-27T00:00:00Z","timestamp":1437955200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/journals.sagepub.com\/page\/policies\/text-and-data-mining-license"}],"content-domain":{"domain":["journals.sagepub.com"],"crossmark-restriction":true},"short-container-title":["Journal of Intelligent &amp; Fuzzy Systems"],"published-print":{"date-parts":[[2015,7,29]]},"abstract":"<jats:p>In this paper a DC-DC converter with high voltage conversion ratio and low chip area, which is useful for RFID tag chip, is presented. DC-DC converter is modeled with neural network while TLBO algorithm is used to optimize it. In each stage of the converter the charge transfer switch is used for increasing the voltage gain. Each charge transfer switch is dynamically controlled with the inverter and the charge transfer switch is completely becomes on and off. By using the achieved results of the TLBO algorithm, the output voltage and voltage conversion ratio of DC-DC converter are 7.741\u200aV and 86% , respectively, while the input voltage is considered 1.8\u200aV. The layout of the DC-DC converter chip area drawn in Cadence software is 60\u03bcm*60\u03bcm. The neural network and TLBO algorithm are programed with Matlab software and the Cadence software is used for extracting the circuit primary samples and simulating the final design of DC-DC converter in 0.18\u03bcm CMOS technology.<\/jats:p>","DOI":"10.3233\/ifs-151660","type":"journal-article","created":{"date-parts":[[2015,11,10]],"date-time":"2015-11-10T11:34:43Z","timestamp":1447155283000},"page":"1827-1833","update-policy":"https:\/\/doi.org\/10.1177\/sage-journals-update-policy","source":"Crossref","is-referenced-by-count":2,"title":["A new approach based on TLBO for DC-DC converter in RFID tag"],"prefix":"10.1177","volume":"29","author":[{"given":"Rezvan","family":"Dastanian","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ebrahim","family":"Abiri","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mohammad Reza","family":"Salehi","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Akram","family":"Akbari","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"179","published-online":{"date-parts":[[2015,7,27]]},"reference":[{"key":"e_1_3_1_2_2","first-page":"321","article-title":"A new charge pump circuit dealing with gate-oxide reliability issue in low-voltage processes","author":"Ker MD","year":"2004","unstructured":"Ker MD, Chen SL, Tsai CS 2004 A new charge pump circuit dealing with gate-oxide reliability issue in 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