{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T22:51:06Z","timestamp":1776811866514,"version":"3.51.2"},"reference-count":24,"publisher":"European Society of Computational Methods in Sciences and Engineering","issue":"1","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["JCM"],"published-print":{"date-parts":[[2018,2,22]]},"DOI":"10.3233\/jcm-170774","type":"journal-article","created":{"date-parts":[[2017,10,17]],"date-time":"2017-10-17T12:35:53Z","timestamp":1508243753000},"page":"299-305","source":"Crossref","is-referenced-by-count":1,"title":["Optical properties of AlxIn1-xP ternary semiconductor alloys"],"prefix":"10.66113","volume":"18","author":[{"given":"Fadila","family":"Mezrag","sequence":"first","affiliation":[]},{"given":"Nadir","family":"Bouarissa","sequence":"additional","affiliation":[]}],"member":"55691","reference":[{"key":"10.3233\/JCM-170774_ref2","doi-asserted-by":"crossref","first-page":"5815","DOI":"10.1063\/1.1368156","article-title":"Band parameters for III-V compound semiconductors and their alloys","volume":"89","author":"Vurgaftman","year":"2001","journal-title":"J. Appl. Phys."},{"key":"10.3233\/JCM-170774_ref3","doi-asserted-by":"crossref","unstructured":"S.Q. Wang and H.Q. Ye, Plane-wave pseudopotential study on mechanical and electronic properties for IV and III-V crystalline phases with zinc-blende structure, Phys. Rev. B 66 (2002), 235111-1-235111-7.","DOI":"10.1103\/PhysRevB.66.235111"},{"key":"10.3233\/JCM-170774_ref5","doi-asserted-by":"crossref","first-page":"2257","DOI":"10.1109\/LPT.2006.884730","article-title":"AlInP-AlGaInP quantum-well lasers grown by molecular beam epitaxy","volume":"18","author":"Tukiainen","year":"2006","journal-title":"IEEE Photon Technol. Lett."},{"key":"10.3233\/JCM-170774_ref6","doi-asserted-by":"crossref","unstructured":"A. Wadehra, J.W. Nicklas and J.W. Wilkins, Band offsets of semiconductor heterostructures: A hybrid density functional study, Appl. Phys. Lett. 97 (2010), 092119-1-092119-3.","DOI":"10.1063\/1.3487776"},{"key":"10.3233\/JCM-170774_ref7","doi-asserted-by":"crossref","first-page":"381","DOI":"10.1063\/1.118419","article-title":"Over 30% efficient InGaP\/GaAs tandem solar cells","volume":"70","author":"Takamoto","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"10.3233\/JCM-170774_ref8","doi-asserted-by":"crossref","first-page":"4869","DOI":"10.1063\/1.338352","article-title":"Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb-Key properties for a variety of the 2-4-microns optoelectronic device applications","volume":"61","author":"Adachi","year":"1987","journal-title":"J. Appl. Phys."},{"key":"10.3233\/JCM-170774_ref9","first-page":"7","article-title":"Properties of nonlocal pseudopotentials of Si and Ge optimized under full interdependence among potential parameters","volume":"2","author":"Kobayasi","year":"1993","journal-title":"Bull. Coll. Med. Sci. Tohoku Univ."},{"key":"10.3233\/JCM-170774_ref10","doi-asserted-by":"crossref","first-page":"478","DOI":"10.1016\/j.spmi.2005.11.002","article-title":"Energy band gaps for the GaxIn1-xAsyP1-y alloys lattice matched to different substrates","volume":"39","author":"Bechiri","year":"2006","journal-title":"Superlatt. Microstruct."},{"key":"10.3233\/JCM-170774_ref11","first-page":"3253","article-title":"Band structure of ternary compound semiconductors beyond the virtual crystal approximation","volume":"2","author":"Lee","year":"1990","journal-title":"J. Phys.: Condens. Matter"},{"key":"10.3233\/JCM-170774_ref12","doi-asserted-by":"crossref","first-page":"285","DOI":"10.1016\/S0375-9601(98)00403-4","article-title":"Effects of compositional disorder upon electronic and lattice properties of GaxIn1-xAs","volume":"245","author":"Bouarissa","year":"1998","journal-title":"Phys. Lett. A"},{"key":"10.3233\/JCM-170774_ref13","doi-asserted-by":"crossref","first-page":"126","DOI":"10.1016\/j.physb.2007.05.034","article-title":"Pseudopotential calculations of Cd1-xZnxTe: energy gaps and dielectric constants","volume":"399","author":"Bouarissa","year":"2007","journal-title":"Physica B"},{"key":"10.3233\/JCM-170774_ref14","doi-asserted-by":"crossref","first-page":"603","DOI":"10.1016\/0020-0891(79)90081-2","article-title":"Variation of refractive index with energy gap in semiconductors","volume":"19","author":"Ravindra","year":"1979","journal-title":"Infrared Phys."},{"key":"10.3233\/JCM-170774_ref15","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1088\/0370-1301\/63\/3\/302","article-title":"A relationship between the refractive index and the infra-red threshold of sensitivity for photoconductors","volume":"63","author":"Moss","year":"1950","journal-title":"Proc. Phys. Soc. B"},{"key":"10.3233\/JCM-170774_ref16","doi-asserted-by":"crossref","first-page":"715","DOI":"10.1002\/pssb.2221000240","article-title":"Comments on the Moss formula","volume":"100","author":"Gupta","year":"1980","journal-title":"Phys. Stat. Sol. B"},{"key":"10.3233\/JCM-170774_ref17","doi-asserted-by":"crossref","first-page":"609","DOI":"10.1016\/1350-4495(94)90026-4","article-title":"General relation between refractive index and energy gap in semiconductors","volume":"35","author":"Herv\u00e9","year":"1994","journal-title":"Infrared Phys. Technol."},{"key":"10.3233\/JCM-170774_ref18","doi-asserted-by":"crossref","first-page":"144","DOI":"10.1016\/j.spmi.2013.04.007","article-title":"Electronic band structure and derived properties of AlAsxSb1-x alloys","volume":"59","author":"Al-Assiri","year":"2013","journal-title":"Superlatt. Microstruct."},{"key":"10.3233\/JCM-170774_ref19","doi-asserted-by":"crossref","first-page":"615","DOI":"10.1063\/1.98098","article-title":"Optical properties of AlxIn1-xP grown by organometallic vapor phase epitaxy","volume":"50","author":"Bour","year":"1987","journal-title":"Appl. Phys. Lett."},{"key":"10.3233\/JCM-170774_ref20","doi-asserted-by":"crossref","first-page":"213","DOI":"10.1063\/1.112676","article-title":"Electronic band structure of AlGaInP grown by solid source molecular-beam epitaxy","volume":"65","author":"Mowbray","year":"1994","journal-title":"Appl. Phys. Lett."},{"key":"10.3233\/JCM-170774_ref21","doi-asserted-by":"crossref","first-page":"11190","DOI":"10.1103\/PhysRevB.50.11190","article-title":"Measurement of the direct energy gap of Al0.5In0.5P: Implications for the band discontinuity at Ga1-xInxP\/AlyIn1-yP heterojunctions","volume":"50","author":"Dawson","year":"1994","journal-title":"Phys. Rev. B"},{"key":"10.3233\/JCM-170774_ref22","doi-asserted-by":"crossref","first-page":"3412","DOI":"10.1063\/1.358631","article-title":"Optical measurements of electronic band-structure in AlGaInP alloys grown by gas-source molecular-beam epitaxy","volume":"77","author":"Najda","year":"1995","journal-title":"J. Appl. Phys."},{"key":"10.3233\/JCM-170774_ref23","doi-asserted-by":"crossref","first-page":"537","DOI":"10.1143\/JJAP.35.537","article-title":"Electroreflectance study of (AlxGa)1-x0.5In0.5P alloys","volume":"35","author":"Adachi","year":"1996","journal-title":"Japn. J. Appl. Phys."},{"key":"10.3233\/JCM-170774_ref24","doi-asserted-by":"crossref","first-page":"2025","DOI":"10.1063\/1.371003","article-title":"Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 \u2a7d x \u2a7d 1) lattice matched to GaAs","volume":"86","author":"Schubert","year":"1999","journal-title":"J. Appl. Phys."},{"key":"10.3233\/JCM-170774_ref25","doi-asserted-by":"crossref","first-page":"1091","DOI":"10.1088\/0034-4885\/48\/8\/001","article-title":"Electronic properties of semiconductor alloy systems","volume":"48","author":"Jaros","year":"1985","journal-title":"Rep. Prog. Phys."},{"key":"10.3233\/JCM-170774_ref26","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1016\/S0254-0584(02)00124-4","article-title":"Band structure of III-V ternary semiconductor alloys beyond the VCA","volume":"77","author":"Bechiri","year":"2003","journal-title":"Mater. Chem. Phys."}],"container-title":["Journal of Computational Methods in Sciences and Engineering"],"original-title":[],"link":[{"URL":"https:\/\/content.iospress.com\/download?id=10.3233\/JCM-170774","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T22:07:22Z","timestamp":1776809242000},"score":1,"resource":{"primary":{"URL":"https:\/\/journals.sagepub.com\/doi\/full\/10.3233\/JCM-170774"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,2,22]]},"references-count":24,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.3233\/jcm-170774","relation":{},"ISSN":["1472-7978","1875-8983"],"issn-type":[{"value":"1472-7978","type":"print"},{"value":"1875-8983","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,2,22]]}}}