{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T22:51:38Z","timestamp":1776811898677,"version":"3.51.2"},"reference-count":41,"publisher":"European Society of Computational Methods in Sciences and Engineering","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["JCM"],"published-print":{"date-parts":[[2018,8,7]]},"DOI":"10.3233\/jcm-180821","type":"journal-article","created":{"date-parts":[[2018,4,3]],"date-time":"2018-04-03T13:41:26Z","timestamp":1522762886000},"page":"821-833","source":"Crossref","is-referenced-by-count":0,"title":["On-lattice kinetic Monte Carlo simulation of defects migration in silicon: Effects of temperature and recombination distance"],"prefix":"10.66113","volume":"18","author":[{"given":"Gilbert Moises","family":"Oca","sequence":"first","affiliation":[{"name":"National Institute of Physics, University of the Philippines Diliman, Quezon City, Philippines"}]},{"given":"Darwin Barayang","family":"Putungan","sequence":"additional","affiliation":[{"name":"Institute of Mathematical Sciences and Physics, University of the Philippines Los Ba\u00f1os, Laguna, Philippines"}]}],"member":"55691","reference":[{"key":"10.3233\/JCM-180821_ref1","unstructured":"J.C. Phillips, Bonds and Bands in Semiconductors, J.L.M.A.M. Alper and A.S. Nowick, eds, London Academic Press Inc, London, 1973, p.\u00a012."},{"key":"10.3233\/JCM-180821_ref2","unstructured":"K. Kittel, Introduction to Solid State Physics, 8th edn, S. Johnson, ed, John Wiley and Sons Inc, New Jersey, 2005, p.\u00a0187."},{"key":"10.3233\/JCM-180821_ref3","unstructured":"D. Cheung and E. Brach, Conquering the Electron: The Geniuses, Visionaries, Egomaniacs, and Scoundrels Who Built Electronics Age, Rowman and Littlefield Publ Inc, 2014, 218."},{"key":"10.3233\/JCM-180821_ref4","unstructured":"E.A. Keller, Environmental Geology, 9th edn, P.E. Inc, ed, Pearson Prentice Hall, New Jersey, 2011, p.\u00a042."},{"key":"10.3233\/JCM-180821_ref5","doi-asserted-by":"crossref","unstructured":"S. Basu, Crystalline Silicon\u00a0\u2013 Properties and Uses, InTech, 2011, 13.","DOI":"10.5772\/844"},{"issue":"8","key":"10.3233\/JCM-180821_ref6","doi-asserted-by":"crossref","first-page":"5484","DOI":"10.1103\/PhysRevB.40.5484","article-title":"Mechanisms of dopant impurity diffusion in silicon","volume":"40","author":"Nichols","year":"1989","journal-title":"Phys Rev"},{"issue":"1","key":"10.3233\/JCM-180821_ref7","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/BF00617863","article-title":"Point defects, diffusion processes, and swirl defect formation in silicon","volume":"37","author":"Tan","year":"1985","journal-title":"Applied Physics A"},{"issue":"2","key":"10.3233\/JCM-180821_ref8","doi-asserted-by":"crossref","first-page":"292","DOI":"10.1103\/RevModPhys.61.289","article-title":"Point defects and dopant diffusion in silicon","volume":"61","author":"Fahey","year":"1989","journal-title":"Rev Mod Phys"},{"key":"10.3233\/JCM-180821_ref9","doi-asserted-by":"crossref","unstructured":"M. Lannoo and J. Burgoin, Point Defects in Semiconductors I: Theoretical Aspects, Springer-Verlag Berlin, Germany, 1981.","DOI":"10.1007\/978-3-642-81574-4"},{"key":"10.3233\/JCM-180821_ref10","doi-asserted-by":"crossref","unstructured":"G.D. Watkins, Intrinsic defects in silicon, Material Science in Semiconductor Processing 3(4) (2000), 227\u2013235.","DOI":"10.1016\/S1369-8001(00)00037-8"},{"key":"10.3233\/JCM-180821_ref11","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1016\/S0022-0248(02)02240-6","article-title":"Calculation of bulk defects in CZ Si growth: Impact of melt turbulent fluctuations","volume":"250","author":"Kalaev","year":"2003","journal-title":"Journal of Crystal Growth"},{"issue":"1","key":"10.3233\/JCM-180821_ref12","doi-asserted-by":"crossref","first-page":"252","DOI":"10.1149\/1.2056097","article-title":"Diffusion modeling of ion implanted boron in Si during RTA: Correlation of extended defect formation and annealing with the enhanced diffusion of boron","volume":"140","author":"Kinoshita","year":"1993","journal-title":"J Electrochem Soc"},{"issue":"7","key":"10.3233\/JCM-180821_ref13","doi-asserted-by":"crossref","first-page":"4741","DOI":"10.1103\/PhysRevB.54.4741","article-title":"Ab initio pseudopotential calculations of B diffusion and pairing in Si","volume":"54","author":"Zhu","year":"1996","journal-title":"Physical Review B"},{"issue":"1","key":"10.3233\/JCM-180821_ref14","doi-asserted-by":"crossref","first-page":"40","DOI":"10.1007\/s10825-013-0512-5","article-title":"Modeling of defects, dopant diffusion and clustering in silicon","volume":"13","author":"Aboy","year":"2014","journal-title":"Journal of Computational Electronics"},{"issue":"1\u20132","key":"10.3233\/JCM-180821_ref15","first-page":"31","article-title":"Radiation damage in silicon detectors","volume":"512","author":"Lindstrom","year":"2003","journal-title":"Nuclear Instruments and Methods in Physics Research"},{"key":"10.3233\/JCM-180821_ref16","first-page":"261","article-title":"The behavior of point defects in silicon crystal","author":"Mizuo","year":"1987","journal-title":"Defects and Properties of Semiconductors"},{"key":"10.3233\/JCM-180821_ref17","doi-asserted-by":"crossref","first-page":"491","DOI":"10.1016\/S0168-583X(02)01811-6","article-title":"The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors","volume":"201","author":"Lazanu","year":"2003","journal-title":"Nucl Instrum Meth"},{"key":"10.3233\/JCM-180821_ref18","doi-asserted-by":"crossref","first-page":"1141","DOI":"10.4028\/www.scientific.net\/MSF.196-201.1141","article-title":"Frenkel defects in low temperature e\u2013Irradiated Ge and Si investigated by X-Ray diffraction","volume":"196","author":"Bausch","year":"1995","journal-title":"Materials Science Forum"},{"issue":"1\u20133","key":"10.3233\/JCM-180821_ref19","doi-asserted-by":"crossref","first-page":"223","DOI":"10.1016\/j.vacuum.2005.08.002","article-title":"Defect production in gamma-irradiated silicon at different temperatures","volume":"80","author":"Kovacevic","year":"2005","journal-title":"Vacuum"},{"key":"10.3233\/JCM-180821_ref20","first-page":"2","article-title":"Radiation hardness of silicon detectors\u00a0\u2013 a challegne from high-energy physics","volume":"426","author":"Lindstrom","year":"1999","journal-title":"Nuclear Instruments and Methods in Physics Research"},{"issue":"1","key":"10.3233\/JCM-180821_ref21","doi-asserted-by":"crossref","first-page":"93","DOI":"10.1103\/PhysRevB.40.93","article-title":"keV particle bombardment of semiconductors: A molecular-dynamics simulation","volume":"40","author":"Smith","year":"1989","journal-title":"Phys Rev"},{"key":"10.3233\/JCM-180821_ref22","first-page":"89","article-title":"The engineering of intrinsic point defects in silicon wafers and crystals","volume":"73","author":"Falster","year":"2000","journal-title":"Materials Science and Engineering"},{"key":"10.3233\/JCM-180821_ref23","doi-asserted-by":"crossref","unstructured":"R.Y. Rubinstein and D.P. Kroese, Simulation and the Monte Carlo Method, John Wiley and Sons, Canada, 1981.","DOI":"10.1002\/9780470316511"},{"issue":"41\u201342","key":"10.3233\/JCM-180821_ref24","doi-asserted-by":"crossref","first-page":"3386","DOI":"10.1016\/j.cma.2008.03.010","article-title":"The kinetic Monte Carlo method: Foundation, implementation, and application","volume":"197","author":"Battaile","year":"2008","journal-title":"Computer Methods in Applied Mechanics and Engineering"},{"issue":"1","key":"10.3233\/JCM-180821_ref25","doi-asserted-by":"crossref","first-page":"10","DOI":"10.1016\/0021-9991(75)90060-1","article-title":"A new algorithm for Monte Carlo simulation of ising spin systems","volume":"17","author":"Bortz","year":"1975","journal-title":"Journal of Computational Physics"},{"issue":"2","key":"10.3233\/JCM-180821_ref26","doi-asserted-by":"crossref","first-page":"1090","DOI":"10.1063\/1.461138","article-title":"Theoretical foundations of dynamical Monte Carlo simulations","volume":"95","author":"Fichthorn","year":"1991","journal-title":"J Chem Phys"},{"key":"10.3233\/JCM-180821_ref27","doi-asserted-by":"crossref","unstructured":"M.H. Kalos and P.A. Whitlock, Monte Carlo Methods, 2nd edn, Wiley-VCH Verlag GmbH and Co. KGaA, Germany, 2008, 154\u2013155.","DOI":"10.1002\/9783527626212"},{"key":"10.3233\/JCM-180821_ref28","unstructured":"N.W. Ashcroft and N.D. Mermin, Solid State Physics, Harcourt Inc., USA, 1976, 616."},{"key":"10.3233\/JCM-180821_ref29","doi-asserted-by":"crossref","unstructured":"D. Raabe, Computational Materials Science: The simulation of materials, microstructures and properties, Wiley-VCH Verlag GmbH, Germany, 1998, 80.","DOI":"10.1002\/3527601945"},{"issue":"8","key":"10.3233\/JCM-180821_ref30","first-page":"4387","article-title":"Non-local screened-exchange calculations for defects in semiconductors: Vacancy in silicon","volume":"15","author":"Lento","year":"2003","journal-title":"Journal of Physics"},{"key":"10.3233\/JCM-180821_ref31","doi-asserted-by":"crossref","unstructured":"G. Subramanian, K. Jones, M. Law, M. Caturla, S. Theiss and T.D. de\u00a0la\u00a0Rubia, Relative stability of silicon self-interstitial defects, in: MRS Proceedings, Cambridge Univ Press, 610 (2000), B11\u201310.","DOI":"10.1557\/PROC-610-B11.10"},{"issue":"1","key":"10.3233\/JCM-180821_ref32","first-page":"262","article-title":"A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in Si","volume":"148","author":"La\u00a0Magna","year":"1999","journal-title":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms"},{"issue":"21","key":"10.3233\/JCM-180821_ref33","doi-asserted-by":"crossref","first-page":"14279","DOI":"10.1103\/PhysRevB.55.14279","article-title":"Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes","volume":"55","author":"Tang","year":"1997","journal-title":"Physical Review B"},{"key":"10.3233\/JCM-180821_ref34","doi-asserted-by":"crossref","unstructured":"R.W. Balluffi, S. Allen and W.C. Carter, Kinetics of materials, John Wiley & Sons, 2005, 148.","DOI":"10.1002\/0471749311"},{"issue":"1","key":"10.3233\/JCM-180821_ref35","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1116\/1.3294704","article-title":"Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys","volume":"28","author":"Chen","year":"2010","journal-title":"Journal of Vacuum Science & Technology B"},{"key":"10.3233\/JCM-180821_ref36","unstructured":"M.A. Sommers, Understanding the elements of the periodic table\u00a0\u2013 silicon, The Rosen Publishing Inc., New York, 2008, 22."},{"key":"10.3233\/JCM-180821_ref37","doi-asserted-by":"crossref","unstructured":"M.O. Steinhauser, Computational Multiscale Modeling of Fluids and Solids: Theory and Applications, Springer, Germany, 2008, 3\u20139727.","DOI":"10.1007\/978-3-030-98954-5_1"},{"key":"10.3233\/JCM-180821_ref38","unstructured":"D. Basu, Dictionary of Material Science and High Energy Physics, CRC Press LLC, USA, 2001, 53."},{"key":"10.3233\/JCM-180821_ref39","unstructured":"W.C. O\u2019Mara, R.B. Herring and L.P. Hunt, Handbook of Semiconductor Silicon Technology, Noyes Publications, USA, 1990, 176."},{"issue":"6","key":"10.3233\/JCM-180821_ref40","doi-asserted-by":"crossref","first-page":"3978","DOI":"10.1103\/PhysRevB.59.3969","article-title":"Defect migration in crystalline silicon","volume":"59","author":"Munro","year":"1999","journal-title":"Physical Review B"},{"issue":"16","key":"10.3233\/JCM-180821_ref41","doi-asserted-by":"crossref","first-page":"2435","DOI":"10.1103\/PhysRevLett.70.2435","article-title":"First-principles calculations of self-diffusion constants in silicon","volume":"70","author":"Bl\u00f6chl","year":"1993","journal-title":"Phys Rev Letters"}],"container-title":["Journal of Computational Methods in Sciences and Engineering"],"original-title":[],"link":[{"URL":"https:\/\/content.iospress.com\/download?id=10.3233\/JCM-180821","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T22:07:27Z","timestamp":1776809247000},"score":1,"resource":{"primary":{"URL":"https:\/\/journals.sagepub.com\/doi\/full\/10.3233\/JCM-180821"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,8,7]]},"references-count":41,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.3233\/jcm-180821","relation":{},"ISSN":["1472-7978","1875-8983"],"issn-type":[{"value":"1472-7978","type":"print"},{"value":"1875-8983","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,8,7]]}}}