{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,8]],"date-time":"2026-04-08T04:56:04Z","timestamp":1775624164118,"version":"3.50.1"},"reference-count":38,"publisher":"Frontiers Media SA","license":[{"start":{"date-parts":[[2022,9,14]],"date-time":"2022-09-14T00:00:00Z","timestamp":1663113600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52025022"],"award-info":[{"award-number":["52025022"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["frontiersin.org"],"crossmark-restriction":true},"short-container-title":["Front. Comput. Neurosci."],"abstract":"<jats:p>The intriguing properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) enable the exploration of new electronic device architectures, particularly the emerging memristive devices for in-memory computing applications. Implementation of arithmetic logic operations taking advantage of the non-linear characteristics of memristor can significantly improve the energy efficiency and simplify the complexity of peripheral circuits. Herein, we demonstrate an arithmetic logic unit function using a lateral volatile memristor based on layered 2D tungsten disulfide (WS<jats:sub>2<\/jats:sub>) materials and some combinational logic circuits. Removable oxygen ions were introduced into WS<jats:sub>2<\/jats:sub> materials through oxygen plasma treatment process. The resistive switching of the memristive device caused by the thermophoresis-assisted oxygen ions migration has also been revealed. Based on the characteristics of excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and spike rate dependent plasticity (SRDP), a real-time numerical system convertor was successfully accomplished, which is a significant computing function of arithmetic logic unit. This work paves a new way for developing 2D memristive devices for future arithmetic logic applications.<\/jats:p>","DOI":"10.3389\/fncom.2022.1015945","type":"journal-article","created":{"date-parts":[[2022,9,14]],"date-time":"2022-09-14T12:57:13Z","timestamp":1663160233000},"update-policy":"https:\/\/doi.org\/10.3389\/crossmark-policy","source":"Crossref","is-referenced-by-count":6,"title":["Real-time numerical system convertor via two-dimensional WS2-based memristive device"],"prefix":"10.3389","volume":"16","author":[{"given":"Xing","family":"Xin","sequence":"first","affiliation":[]},{"given":"Liyao","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Jiamei","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Youzhe","family":"Bao","sequence":"additional","affiliation":[]},{"given":"Ye","family":"Tao","sequence":"additional","affiliation":[]},{"given":"Ya","family":"Lin","sequence":"additional","affiliation":[]},{"given":"Jingyao","family":"Bian","sequence":"additional","affiliation":[]},{"given":"Zhongqiang","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Xiaoning","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Haiyang","family":"Xu","sequence":"additional","affiliation":[]},{"given":"Yichun","family":"Liu","sequence":"additional","affiliation":[]}],"member":"1965","published-online":{"date-parts":[[2022,9,14]]},"reference":[{"key":"B1","doi-asserted-by":"publisher","first-page":"507","DOI":"10.1038\/s41586-019-1573-9","article-title":"Graphene and two-dimensional materials for silicon technology.","volume":"573","author":"Akinwande","year":"2019","journal-title":"Nature"},{"key":"B2","doi-asserted-by":"publisher","first-page":"2206","DOI":"10.3390\/s19092206","article-title":"Smarter traffic prediction using big data, in-memory computing, deep learning and GPUs.","volume":"19","author":"Aqib","year":"2019","journal-title":"Sensors"},{"key":"B3","doi-asserted-by":"publisher","first-page":"142110","DOI":"10.1063\/1.4824205","article-title":"Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping.","volume":"103","author":"Chen","year":"2013","journal-title":"Appl. Phy. Lett."},{"key":"B4","doi-asserted-by":"publisher","first-page":"638","DOI":"10.1038\/s41928-020-00473-w","article-title":"Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks.","volume":"3","author":"Chen","year":"2020","journal-title":"Nat. Electron."},{"key":"B5","doi-asserted-by":"publisher","first-page":"1905660","DOI":"10.1002\/adfm.201905660","article-title":"Functional demonstration of a memristive arithmetic logic unit (MemALU) for in-memory computing.","volume":"29","author":"Cheng","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"B6","doi-asserted-by":"publisher","first-page":"909","DOI":"10.1038\/s41929-018-0181-7","article-title":"Characteristics and performance of two-dimensional materials for electrocatalysis.","volume":"1","author":"Chia","year":"2018","journal-title":"Nat. Catal."},{"key":"B7","doi-asserted-by":"publisher","first-page":"2004659","DOI":"10.1002\/adma.202004659","article-title":"Emerging memristive artificial synapses and neurons for energy-efficient neuromorphic computing.","volume":"32","author":"Choi","year":"2020","journal-title":"Adv. Mater."},{"key":"B8","doi-asserted-by":"publisher","first-page":"8076","DOI":"10.1109\/JIOT.2019.2920987","article-title":"Blockchain for internet of things: a survey.","volume":"6","author":"Dai","year":"2019","journal-title":"IEEE Internet Things J."},{"key":"B9","doi-asserted-by":"publisher","first-page":"1900396","DOI":"10.1002\/pssr.201900396","article-title":"Formation of few- and monolayered WS2 sheets using plasma-treated dimethyl-sulfoxide solvent-based exfoliation.","volume":"14","author":"Esfandiari","year":"2020","journal-title":"Phys. Status Solidi RRL"},{"key":"B10","doi-asserted-by":"publisher","first-page":"425204","DOI":"10.1088\/1361-6528\/ab31b5","article-title":"Formation of large area WS2 nanosheets using an oxygen-plasma assisted exfoliation suitable for optical devices.","volume":"30","author":"Esfandiari","year":"2019","journal-title":"Nanotechnology"},{"key":"B11","doi-asserted-by":"publisher","first-page":"23164","DOI":"10.1021\/acsami.7b04919","article-title":"Ambipolar MoS2 transistors by nanoscale tailoring of schottky barrier using oxygen plasma functionalization.","volume":"9","author":"Giannazzo","year":"2017","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"B12","doi-asserted-by":"publisher","first-page":"1705914","DOI":"10.1002\/adma.201705914","article-title":"Memristor-based analog computation and neural network classification with a dot product engine.","volume":"30","author":"Hu","year":"2018","journal-title":"Adv. Mater."},{"key":"B13","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","article-title":"In-memory computing with resistive switching devices.","volume":"1","author":"Ielmini","year":"2018","journal-title":"Nat. Electron."},{"key":"B14","doi-asserted-by":"publisher","first-page":"470","DOI":"10.1109\/TVLSI.2017.2776954","article-title":"Computing in memory with spin-transfer torque magnetic RAM.","volume":"26","author":"Jain","year":"2018","journal-title":"IEEE Trans. VLSI Syst."},{"key":"B15","doi-asserted-by":"publisher","first-page":"245213","DOI":"10.1103\/PhysRevB.83.245213","article-title":"Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2.","volume":"83","author":"Kuc","year":"2011","journal-title":"Phys. Rev. B"},{"key":"B16","doi-asserted-by":"publisher","first-page":"575","DOI":"10.1038\/s41578-022-00434-z","article-title":"Dynamical memristors for higher-complexity neuromorphic computing.","volume":"7","author":"Kumar","year":"2022","journal-title":"Nat. Rev. Mater."},{"key":"B17","doi-asserted-by":"publisher","first-page":"58","DOI":"10.1007\/s40820-021-00784-3","article-title":"Memristive devices based on two-dimensional transition metal chalcogenides for neuromorphic computing.","volume":"14","author":"Kwon","year":"2022","journal-title":"Nano Micro Lett."},{"key":"B18","doi-asserted-by":"publisher","first-page":"54","DOI":"10.1002\/inf2.12005","article-title":"Emerging in-plane anisotropic two-dimensional materials.","volume":"1","author":"Li","year":"2019","journal-title":"InfoMat"},{"key":"B19","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.jii.2018.01.005","article-title":"5G internet of things: a survey.","volume":"10","author":"Li","year":"2018","journal-title":"J. Ind. Inf. Integr."},{"key":"B20","doi-asserted-by":"publisher","first-page":"225","DOI":"10.1038\/s41928-020-0397-9","article-title":"Three-dimensional memristor circuits as complex neural networks.","volume":"3","author":"Lin","year":"2020","journal-title":"Nat. Electron."},{"key":"B21","doi-asserted-by":"publisher","first-page":"545","DOI":"10.1038\/s41565-020-0724-3","article-title":"Two-dimensional materials for next-generation computing technologies.","volume":"15","author":"Liu","year":"2020","journal-title":"Nat. Nanotechnol."},{"key":"B22","doi-asserted-by":"publisher","first-page":"3042","DOI":"10.1109\/ted.2011.2159221","article-title":"Performance limits of monolayer transition metal dichalcogenide transistors.","volume":"58","author":"Liu","year":"2011","journal-title":"IEEE Trans. Electron. Devices"},{"key":"B23","doi-asserted-by":"publisher","first-page":"323","DOI":"10.1038\/s41586-019-1013-x","article-title":"Van der waals integration before and beyond two-dimensional materials.","volume":"567","author":"Liu","year":"2019","journal-title":"Nature"},{"key":"B24","doi-asserted-by":"publisher","first-page":"746","DOI":"10.1021\/acsnano.9b07687","article-title":"Artificial optoelectronic synapses based on ferroelectric field-effect enabled 2D transition metal dichalcogenide memristive transistors.","volume":"14","author":"Luo","year":"2020","journal-title":"ACS Nano"},{"key":"B25","doi-asserted-by":"publisher","first-page":"1900766","DOI":"10.1002\/adom.201900766","article-title":"Photonic memristor for future computing: a perspective.","volume":"7","author":"Mao","year":"2019","journal-title":"Adv. Opt. Mater."},{"key":"B26","doi-asserted-by":"publisher","first-page":"3265","DOI":"10.1007\/s00034-019-01318-4","article-title":"Energy-efficient ternary arithmetic logic unit sesign in CNTFET technology.","volume":"39","author":"Sharma","year":"2020","journal-title":"Circ. Syst. Signal Process."},{"key":"B27","doi-asserted-by":"publisher","first-page":"eabg1455","DOI":"10.1126\/sciadv.abg1455","article-title":"In-sensor reservoir computing for language learning via two-dimensional memristors.","volume":"7","author":"Sun","year":"2021","journal-title":"Sci. Adv."},{"key":"B28","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1109\/MSSC.2019.2922889","article-title":"In-memory computing: advances and prospects.","volume":"11","author":"Verma","year":"2019","journal-title":"IEEE Solid State Circ. Magazine"},{"key":"B29","doi-asserted-by":"publisher","first-page":"130","DOI":"10.1038\/s41928-018-0021-4","article-title":"Robust memristors based on layered two-dimensional materials.","volume":"1","author":"Wang","year":"2018","journal-title":"Nat. Electron."},{"key":"B30","doi-asserted-by":"publisher","first-page":"1510","DOI":"10.1038\/s41467-020-15158-3","article-title":"Toward a generalized bienenstock-cooper-munro rule for spatiotemporal learning via triplet-STDP in memristive devices.","volume":"11","author":"Wang","year":"2020","journal-title":"Nat. Commun."},{"key":"B31","doi-asserted-by":"publisher","first-page":"566","DOI":"10.1016\/j.nanoen.2018.12.057","article-title":"Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications.","volume":"57","author":"Yang","year":"2019","journal-title":"Nano Energy"},{"key":"B32","doi-asserted-by":"publisher","first-page":"4144","DOI":"10.1021\/acs.nanolett.0c00002","article-title":"Two-dimensional unipolar memristors with logic and memory functions.","volume":"20","author":"Yin","year":"2020","journal-title":"Nano Lett."},{"key":"B33","doi-asserted-by":"publisher","first-page":"22435","DOI":"10.1021\/acsami.8b05885","article-title":"Two-dimensional high-quality monolayered triangular WS2 flakes for field-effect transistors.","volume":"10","author":"Yue","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"B34","doi-asserted-by":"publisher","first-page":"66","DOI":"10.1007\/s40820-020-0402-x","article-title":"Two-dimensional materials in large-areas: synthesis, properties and applications.","volume":"12","author":"Zavabeti","year":"2020","journal-title":"Nano Micro Lett."},{"key":"B35","doi-asserted-by":"publisher","first-page":"1731","DOI":"10.1007\/s12274-014-0532-x","article-title":"Two-dimensional semiconductors with possible high room temperature mobility.","volume":"7","author":"Zhang","year":"2014","journal-title":"Nano Res."},{"key":"B36","doi-asserted-by":"publisher","first-page":"408","DOI":"10.1038\/s41467-020-20692-1","article-title":"Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing.","volume":"12","author":"Zhong","year":"2021","journal-title":"Nat. Commun."},{"key":"B37","doi-asserted-by":"publisher","first-page":"23204","DOI":"10.1007\/s11467-021-1114-5","article-title":"Emerging of two-dimensional materials in novel memristor.","volume":"17","author":"Zhou","year":"2021","journal-title":"Front. Phys."},{"key":"B38","doi-asserted-by":"publisher","first-page":"383","DOI":"10.1109\/TITS.2018.2815678","article-title":"Big data analytics in intelligent transportation systems: a survey.","volume":"20","author":"Zhu","year":"2019","journal-title":"IEEE Trans. Intell. Transp."}],"container-title":["Frontiers in Computational Neuroscience"],"original-title":[],"link":[{"URL":"https:\/\/www.frontiersin.org\/articles\/10.3389\/fncom.2022.1015945\/full","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,9,14]],"date-time":"2022-09-14T12:57:17Z","timestamp":1663160237000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.frontiersin.org\/articles\/10.3389\/fncom.2022.1015945\/full"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,9,14]]},"references-count":38,"alternative-id":["10.3389\/fncom.2022.1015945"],"URL":"https:\/\/doi.org\/10.3389\/fncom.2022.1015945","relation":{},"ISSN":["1662-5188"],"issn-type":[{"value":"1662-5188","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,9,14]]},"article-number":"1015945"}}