{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T01:53:11Z","timestamp":1760147591773,"version":"build-2065373602"},"reference-count":34,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2023,2,14]],"date-time":"2023-02-14T00:00:00Z","timestamp":1676332800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Computation"],"abstract":"<jats:p>In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.<\/jats:p>","DOI":"10.3390\/computation11020034","type":"journal-article","created":{"date-parts":[[2023,2,15]],"date-time":"2023-02-15T02:31:23Z","timestamp":1676428283000},"page":"34","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress"],"prefix":"10.3390","volume":"11","author":[{"given":"Sneha","family":"Kumari","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Indian Institute of Technology, Patna 801106, India"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1656-3428","authenticated-orcid":false,"given":"Akhilesh Kumar","family":"Pathak","sequence":"additional","affiliation":[{"name":"International School of Engineering (ISE), Intelligent Control Automation of Process Systems Research Unit, Chulalongkorn University, Bangkok 10330, Thailand"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6928-1109","authenticated-orcid":false,"given":"Rahul Kumar","family":"Gangwar","sequence":"additional","affiliation":[{"name":"Department of Physics and Electronics, Rajdhani College, University of Delhi, New Delhi 110015, India"}]},{"given":"Sumanta","family":"Gupta","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Indian Institute of Technology, Patna 801106, India"}]}],"member":"1968","published-online":{"date-parts":[[2023,2,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"55","DOI":"10.1016\/j.photonics.2018.10.006","article-title":"Cladding stress induced performance variation of silicon mmi coupler","volume":"33","author":"Kumari","year":"2019","journal-title":"Photonics Nanostruct.-Fundam. 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