{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,26]],"date-time":"2026-03-26T19:22:02Z","timestamp":1774552922436,"version":"3.50.1"},"reference-count":49,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2024,11,27]],"date-time":"2024-11-27T00:00:00Z","timestamp":1732665600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Computation"],"abstract":"<jats:p>A comprehensive investigation of hydrogen grabbing towards the formation of hetero-clusters of AlGaN\u2013H, Si\u2013AlGaN\u2013H, Ge\u2013AlGaN\u2013H, Pd\u2013AlGaN\u2013H, and Pt\u2013AlGaN\u2013H was carried out using DFT computations at the CAM\u2013B3LYP\u2013D3\/6-311+G (d,p) level of theory. The notable fragile signal intensity close to the parallel edge of the nanocluster sample might be owing to silicon or germanium binding-induced non-spherical distribution of Si\u2013AlGaN or Ge\u2013AlGaN hetero-clusters. Based on TDOS, the excessive growth technique of doping silicon, germanium, palladium, or platinum is a potential approach to designing high-efficiency hybrid semipolar gallium nitride devices in a long-wavelength zone. Therefore, it can be considered that palladium or platinum atoms in the functionalized Pd\u2013AlGaN or Pt\u2013AlGaN might have more impressive sensitivity for accepting the electrons in the process of hydrogen adsorption. The advantages of platinum or palladium over aluminum gallium nitride include its higher electron and hole mobility, allowing platinum or palladium doping devices to operate at higher frequencies than silicon or germanium doping devices. In fact, it can be observed that doped hetero-clusters of Pd\u2013AlGaN or Pt\u2013AlGaN might ameliorate the capability of AlGaN in transistor cells for energy storage.<\/jats:p>","DOI":"10.3390\/computation12120234","type":"journal-article","created":{"date-parts":[[2024,11,27]],"date-time":"2024-11-27T04:20:12Z","timestamp":1732681212000},"page":"234","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Application of Smart Condensed H-Adsorption Nanocomposites in Batteries: Energy Storage Systems and DFT Computations"],"prefix":"10.3390","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6896-336X","authenticated-orcid":false,"given":"Fatemeh","family":"Mollaamin","sequence":"first","affiliation":[{"name":"Department of Biomedical Engineering, Faculty of Engineering and Architecture, Kastamonu University, Kastamonu 37150, Turkey"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6665-837X","authenticated-orcid":false,"given":"Majid","family":"Monajjemi","sequence":"additional","affiliation":[{"name":"Department of Chemical Engineering, Central Tehran Branch, Islamic Azad University, Tehran 1496969191, Iran"}]}],"member":"1968","published-online":{"date-parts":[[2024,11,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Li, C., Chen, X., and Wang, Z. 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