{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T09:33:47Z","timestamp":1787564027547,"version":"build-2736575974"},"reference-count":57,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2017,1,18]],"date-time":"2017-01-18T00:00:00Z","timestamp":1484697600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Entropy"],"abstract":"<jats:p>In the last two decades, the Maximum Entropy Principle (MEP) has been successfully employed to construct macroscopic models able to describe the charge and heat transport in semiconductor devices. These models are obtained, starting from the Boltzmann transport equations, for the charge and the phonon distribution functions, by taking\u2014as macroscopic variables\u2014suitable moments of the distributions and exploiting MEP in order to close the evolution equations for the chosen moments. Important results have also been obtained for the description of charge transport in devices made both of elemental and compound semiconductors, in cases where charge confinement is present and the carrier flow is two- or one-dimensional.<\/jats:p>","DOI":"10.3390\/e19010036","type":"journal-article","created":{"date-parts":[[2017,1,18]],"date-time":"2017-01-18T10:00:47Z","timestamp":1484733647000},"page":"36","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":29,"title":["Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2506-8066","authenticated-orcid":false,"given":"Giovanni","family":"Mascali","sequence":"first","affiliation":[{"name":"Dipartimento di Matematica ed Informatica, Universit\u00e0 della Calabria e INFN-Gruppo c. Cosenza, Rende 87036, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Vittorio","family":"Romano","sequence":"additional","affiliation":[{"name":"Dipartimento di Matematica ed Informatica, Universit\u00e0 di Catania, Catania 95125, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2017,1,18]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Jacoboni, C. (2010). Theory of Electron Transport in Semiconductors: A Pathway from Elementary Physics to Nonequilibrium Green Functions, Springer.","DOI":"10.1007\/978-3-642-10586-9"},{"key":"ref_2","first-page":"1027","article-title":"A semi-Lagrangian deterministic solver for the semiconductor Boltzmann-Poisson system","volume":"2","author":"Carrillo","year":"2007","journal-title":"Commun. Comput. 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