{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:47:23Z","timestamp":1760244443612,"version":"build-2065373602"},"reference-count":18,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2022,11,23]],"date-time":"2022-11-23T00:00:00Z","timestamp":1669161600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Entropy"],"abstract":"<jats:p>This work presents the theoretical calculation of isotherm diagrams for quaternary alloys of III\u2013V semiconductor compounds with the form IIIxIII1\u2212xVyV1\u2212y. In particular, the isotherm diagrams for the AlxGa1\u2212xAsySb1\u2212y quaternary alloy at low temperatures were calculated (500 \u00b0C, 450 \u00b0C, 400 \u00b0C, and 350 \u00b0C). The AlxGa1\u2212xAsySb1\u2212y quaternary alloy was formed from four binary compounds such as GaAs, AlAs, AlSb, and GaSb, all with direct bandgaps. The regular solution approximation was used to find the quaternary isotherm diagrams, represented in four linearly independent equations, which were solved using Parametric Technology Corporation Mathcad 14.0 software for different arsenic and antimony atomic fractions. The results support the possible growth of layers via liquid-phase epitaxy in a range of temperatures from 500 \u00b0C to 350 \u00b0C, where the crystalline quality could be improved at low temperatures. These semiconductor layers could have applications for optoelectronic devices in photonic communications, thermophotovoltaic systems, and microwave devices with good crystalline quality.<\/jats:p>","DOI":"10.3390\/e24121711","type":"journal-article","created":{"date-parts":[[2022,11,23]],"date-time":"2022-11-23T09:50:52Z","timestamp":1669197052000},"page":"1711","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Isotherm Theoretical Study of the AlxGa1\u2212xAsySb1\u2212y Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures"],"prefix":"10.3390","volume":"24","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2297-8248","authenticated-orcid":false,"given":"Erick","family":"Gastell\u00f3u","sequence":"first","affiliation":[{"name":"Divisi\u00f3n de Sistemas Automotrices, Universidad Tecnol\u00f3gica de Puebla (UTP), Puebla C.P. 72300, Puebla, Mexico"},{"name":"Departamento de Investigaci\u00f3n en F\u00edsica, Universidad de Sonora (UNISON), Hermosillo C.P. 83000, Sonora, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rafael","family":"Garc\u00eda","sequence":"additional","affiliation":[{"name":"Departamento de Investigaci\u00f3n en F\u00edsica, Universidad de Sonora (UNISON), Hermosillo C.P. 83000, Sonora, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ana M.","family":"Herrera","sequence":"additional","affiliation":[{"name":"Departamento de Investigaci\u00f3n en F\u00edsica, Universidad de Sonora (UNISON), Hermosillo C.P. 83000, Sonora, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Antonio","family":"Ramos","sequence":"additional","affiliation":[{"name":"Departamento de Investigaci\u00f3n en F\u00edsica, Universidad de Sonora (UNISON), Hermosillo C.P. 83000, Sonora, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Godofredo","family":"Garc\u00eda","sequence":"additional","affiliation":[{"name":"Centro de Investigaci\u00f3n en Dispositivos Semiconductores, Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Puebla C.P. 72570, Puebla, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mario","family":"Robles","sequence":"additional","affiliation":[{"name":"Divisi\u00f3n de Sistemas Automotrices, Universidad Tecnol\u00f3gica de Puebla (UTP), Puebla C.P. 72300, Puebla, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jorge A.","family":"Rodr\u00edguez","sequence":"additional","affiliation":[{"name":"Divisi\u00f3n de Sistemas Automotrices, Universidad Tecnol\u00f3gica de Puebla (UTP), Puebla C.P. 72300, Puebla, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yani D.","family":"Ram\u00edrez","sequence":"additional","affiliation":[{"name":"Universidad Tecnol\u00f3gica de Puebla (UTP), Puebla C.P. 72300, Puebla, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1295-5168","authenticated-orcid":false,"given":"Roberto C.","family":"Carrillo","sequence":"additional","affiliation":[{"name":"Departamento de F\u00edsica, Universidad de Sonora (UNISON), Hermosillo C.P. 83000, Sonora, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,11,23]]},"reference":[{"key":"ref_1","first-page":"146","article-title":"The advantages of transmitting light signals instead of electrical ones have led to ultrapure glass, semiconductor alloys only a few atoms thick and \u201cnonlinear\u201d materials that are now revolutionizing communications","volume":"4","author":"Rowell","year":"1986","journal-title":"Photonic Mater. 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Growth"}],"container-title":["Entropy"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1099-4300\/24\/12\/1711\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T01:25:16Z","timestamp":1760145916000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1099-4300\/24\/12\/1711"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,11,23]]},"references-count":18,"journal-issue":{"issue":"12","published-online":{"date-parts":[[2022,12]]}},"alternative-id":["e24121711"],"URL":"https:\/\/doi.org\/10.3390\/e24121711","relation":{},"ISSN":["1099-4300"],"issn-type":[{"type":"electronic","value":"1099-4300"}],"subject":[],"published":{"date-parts":[[2022,11,23]]}}}