{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:28:52Z","timestamp":1760243332010,"version":"build-2065373602"},"reference-count":11,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2014,8,22]],"date-time":"2014-08-22T00:00:00Z","timestamp":1408665600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented.<\/jats:p>","DOI":"10.3390\/mi5030570","type":"journal-article","created":{"date-parts":[[2014,8,22]],"date-time":"2014-08-22T10:32:33Z","timestamp":1408703553000},"page":"570-582","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Reliability Investigation of GaN HEMTs for MMICs Applications"],"prefix":"10.3390","volume":"5","author":[{"given":"Alessandro","family":"Chini","sequence":"first","affiliation":[{"name":"Department of Engineering \"Enzo Ferrari\", University of Modena and Reggio Emilia,  Via Vignolese 905, 41125 Modena, Italy"}]},{"given":"Gaudenzio","family":"Meneghesso","sequence":"additional","affiliation":[{"name":"Department of Information Engineering, University of Padova, Via Gradenigo 6\/B, 35131 Padova, Italy"}]},{"given":"Alessio","family":"Pantellini","sequence":"additional","affiliation":[{"name":"SELEX ES, Via Tiburtina km. 12400, 00131 Roma, Italy"}]},{"given":"Claudio","family":"Lanzieri","sequence":"additional","affiliation":[{"name":"SELEX ES, Via Tiburtina km. 12400, 00131 Roma, Italy"}]},{"given":"Enrico","family":"Zanoni","sequence":"additional","affiliation":[{"name":"Department of Information Engineering, University of Padova, Via Gradenigo 6\/B, 35131 Padova, Italy"}]}],"member":"1968","published-online":{"date-parts":[[2014,8,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"287","DOI":"10.1109\/JPROC.2007.911060","article-title":"GaN-based RF power devices and amplifier","volume":"96","author":"Mishra","year":"2008","journal-title":"Proc. IEEE"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1764","DOI":"10.1109\/TMTT.2012.2187535","article-title":"A review of GaN on SiC high electron-mobility power transistors and MMICs","volume":"60","author":"Pengelly","year":"2012","journal-title":"IEEE Trans. Microw. Theory Techn."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1017\/S1759078710000097","article-title":"Reliability issues of Gallium Nitride high electron mobility transistors","volume":"2","author":"Meneghesso","year":"2010","journal-title":"Int. J. Microw. Wirel. Technol."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"73","DOI":"10.1049\/el:20040017","article-title":"12 W\/mm power density AlGaN-GaN HEMTs on sapphire substrate","volume":"40","author":"Chini","year":"2004","journal-title":"IET Electron. Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"459","DOI":"10.1109\/LED.2004.831190","article-title":"12 W\/mm AlGaN-GaN HFETs on silicon substrates","volume":"25","author":"Johnson","year":"2004","journal-title":"IEEE Electron. Device Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"2153","DOI":"10.1016\/j.microrel.2012.06.040","article-title":"Field plate related reliability improvements in GaN-on-Si HEMTs","volume":"52","author":"Chini","year":"2012","journal-title":"Microelectron. Reliab."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1461","DOI":"10.1016\/j.microrel.2013.07.033","article-title":"Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs","volume":"53","author":"Chini","year":"2013","journal-title":"Microelectron. Reliab."},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Hayashi, K., Sasaki, H., and Oishi, T. (2013). Analysis of on-state gate current of AlGaN\/GaN high-electron-mobility transistor under electrical and thermal stresses. Jpn. J. Appl. Phys., 52.","DOI":"10.7567\/JJAP.52.124101"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Dammann, M., Casar, M., Konstanzer, H., Waltereit, P., Quay, R., Bronner, W., Kiefer, R., Muller, S., Mikulla, M., van der Wel, P.J., Rodle, T., Bourgeois, F., and Riepe, K. (2010, January 2\u20136). Reliability status of GaN transistors and MMICs in Europe. Proceedings of IEEE International Reliability Physics Symposium (IRPS), Anaheim, CA, USA.","DOI":"10.1109\/IRPS.2010.5488841"},{"key":"ref_10","doi-asserted-by":"crossref","unstructured":"Medjdoub, F., Marcon, D., Das, J., Derluyn, J., Cheng, K., Degroote, S., Germain, M., and Decoutere, S. (2010, January 21\u201323). Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs. Proceedings of Device Research Conference (DRC), South Bend, IN, USA.","DOI":"10.1109\/DRC.2010.5551904"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"116","DOI":"10.1109\/MMM.2009.932286","article-title":"AlGaN\/GaN HFET reliability","volume":"10","author":"Trew","year":"2009","journal-title":"IEEE Microw. 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