{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,13]],"date-time":"2026-04-13T06:59:22Z","timestamp":1776063562409,"version":"3.50.1"},"reference-count":13,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2015,2,16]],"date-time":"2015-02-16T00:00:00Z","timestamp":1424044800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2\/BCl3\/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83\u00b0 were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.<\/jats:p>","DOI":"10.3390\/mi6020281","type":"journal-article","created":{"date-parts":[[2015,2,16]],"date-time":"2015-02-16T10:30:38Z","timestamp":1424082638000},"page":"281-290","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":26,"title":["Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators"],"prefix":"10.3390","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9086-6259","authenticated-orcid":false,"given":"Jian","family":"Yang","sequence":"first","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chaowei","family":"Si","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guowei","family":"Han","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Meng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liuhong","family":"Ma","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yongmei","family":"Zhao","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin","family":"Ning","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2015,2,16]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Sanchez-Rojas, J.-L., Hernando, J., Ababneh, A., Schmid, U., Olivares, J., Clement, M., and Iborra, E. 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Proceedings of IEEE 22nd International Conference on Micro Electro Mechanical Systems, Sorrento, Italy.","DOI":"10.1109\/MEMSYS.2009.4805533"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"2722","DOI":"10.1002\/adma.201104842","article-title":"AlN\/3C-SiC composite plate enabling high-frequency and high-Q micromechanical resonators","volume":"24","author":"Lin","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"78","DOI":"10.1109\/JMEMS.2013.2290793","article-title":"Micromachined one-port aluminum nitride lamb wave resonators utilizing the lowest-order symmetric mode","volume":"23","author":"Lin","year":"2014","journal-title":"J. Microelectromech. Syst."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"524","DOI":"10.1109\/TUFFC.2010.1443","article-title":"Temperature-compensated aluminum nitride lamb wave resonators","volume":"57","author":"Lin","year":"2010","journal-title":"IEEE Trans. Ultrason. Ferroelectr. Freq. Control"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"117001","DOI":"10.1088\/0960-1317\/23\/11\/117001","article-title":"Improving aluminum nitride plasma etch process for MEMS applications","volume":"23","author":"Bliznetsov","year":"2013","journal-title":"J. Micromech. Microeng."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"768","DOI":"10.1116\/1.581647","article-title":"Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN","volume":"17","author":"Hahn","year":"1999","journal-title":"J. Vac. Sci. Technol. A"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"51","DOI":"10.1016\/S0921-5107(02)00160-5","article-title":"High rate etching of AlN using BCl3\/Cl2\/Ar inductively coupled plasma","volume":"95","author":"Khan","year":"2002","journal-title":"Mater. Sci. Eng. 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A"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"98","DOI":"10.1007\/s12613-010-0117-y","article-title":"Influence of substrate metals on the crystal growth of AlN films","volume":"17","author":"Xiong","year":"2010","journal-title":"Int. J. Miner. Metall. Mater."}],"container-title":["Micromachines"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2072-666X\/6\/2\/281\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:42:46Z","timestamp":1760215366000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2072-666X\/6\/2\/281"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,2,16]]},"references-count":13,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2015,2]]}},"alternative-id":["mi6020281"],"URL":"https:\/\/doi.org\/10.3390\/mi6020281","relation":{},"ISSN":["2072-666X"],"issn-type":[{"value":"2072-666X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,2,16]]}}}