{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,3]],"date-time":"2025-12-03T20:31:28Z","timestamp":1764793888754,"version":"build-2065373602"},"reference-count":26,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2015,9,8]],"date-time":"2015-09-08T00:00:00Z","timestamp":1441670400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"the National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61106109","61304251"],"award-info":[{"award-number":["61106109","61304251"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"the CAS FEA International Partnership Program for Creative Research Teams"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.<\/jats:p>","DOI":"10.3390\/mi6091317","type":"journal-article","created":{"date-parts":[[2015,9,8]],"date-time":"2015-09-08T11:59:54Z","timestamp":1441713594000},"page":"1317-1330","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":19,"title":["Fabrication of SWCNT-Graphene Field-Effect Transistors"],"prefix":"10.3390","volume":"6","author":[{"given":"Shuangxi","family":"Xie","sequence":"first","affiliation":[{"name":"State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China"},{"name":"University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China"}]},{"given":"Niandong","family":"Jiao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China"}]},{"given":"Steve","family":"Tung","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China"},{"name":"Department of Mechanical Engineering, University of Arkansas, 204 Mechanical Engineering Building, Fayetteville, AR 72701, USA"}]},{"given":"Lianqing","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China"}]}],"member":"1968","published-online":{"date-parts":[[2015,9,8]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"183","DOI":"10.1038\/nmat1849","article-title":"The rise of graphene","volume":"6","author":"Geim","year":"2007","journal-title":"Nat. Mater."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"814","DOI":"10.1021\/nl8035367","article-title":"Graphene-based composite thin films for electronics","volume":"9","author":"Eda","year":"2009","journal-title":"Nano Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1530","DOI":"10.1126\/science.1158877","article-title":"Graphene: Status and prospects","volume":"324","author":"Geim","year":"2009","journal-title":"Science"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"385","DOI":"10.1126\/science.1157996","article-title":"Measurement of the elastic properties and intrinsic strength of monolayer graphene","volume":"321","author":"Lee","year":"2008","journal-title":"Science"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1229","DOI":"10.1126\/science.1150878","article-title":"Chemically derived, ultrasmooth graphene nanoribbon semiconductors","volume":"319","author":"Li","year":"2008","journal-title":"Science"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1038\/nature09979","article-title":"High-frequency, scaled graphene transistors on diamond-like carbon","volume":"472","author":"Wu","year":"2011","journal-title":"Nature"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"534","DOI":"10.1126\/science.1239089","article-title":"Liquid-mediated dense integration of graphene materials for compact capacitive energy storage","volume":"341","author":"Yang","year":"2013","journal-title":"Science"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"652","DOI":"10.1038\/nmat1967","article-title":"Detection of individual gas molecules adsorbed on graphene","volume":"6","author":"Schedin","year":"2007","journal-title":"Nat. Mater."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"3058","DOI":"10.1002\/adma.201000736","article-title":"All-Carbon Electronic Devices Fabricated by Directly Grown Single-Walled Carbon Nanotubes on Reduced Graphene Oxide Electrodes","volume":"22","author":"Li","year":"2010","journal-title":"Adv. Mater."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"3821","DOI":"10.1002\/adma.201101955","article-title":"Monolithic Integration of Arrays of Single-Walled Carbon Nanotubes and Sheets of Graphene","volume":"23","author":"Hong","year":"2011","journal-title":"Adv. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"6050","DOI":"10.1002\/adma.201302265","article-title":"Fabrication of All-Carbon Nanotube Electronic Devices on Flexible Substrates Through CVD and Transfer Methods","volume":"25","author":"Zou","year":"2013","journal-title":"Adv. Mater."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"605","DOI":"10.1038\/nnano.2007.300","article-title":"Carbon-based electronics","volume":"2","author":"Avouris","year":"2007","journal-title":"Nat. Nanotechnol."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"1913","DOI":"10.1016\/S0008-6223(00)00322-5","article-title":"Work function of carbon nanotubes","volume":"39","author":"Shiraishi","year":"2001","journal-title":"Carbon"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"647","DOI":"10.1021\/nl0730817","article-title":"Measuring the work function of carbon nanotubes with thermionic method","volume":"8","author":"Liu","year":"2008","journal-title":"Nano Lett."},{"key":"ref_15","first-page":"011002","article-title":"Rectification at graphene-semiconductor interfaces: Zero-gap semiconductor-based diodes","volume":"2","author":"Tongay","year":"2012","journal-title":"Phys. Rev. X"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"233103","DOI":"10.1063\/1.4882159","article-title":"Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers","volume":"104","author":"Zeng","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"304","DOI":"10.1002\/adma.200501740","article-title":"Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics","volume":"18","author":"Cao","year":"2006","journal-title":"Adv. Mater."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"699","DOI":"10.1038\/ncomms1702","article-title":"Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum","volume":"3","author":"Gao","year":"2012","journal-title":"Nat. Commun."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"3582","DOI":"10.1021\/nl801386m","article-title":"Direct imaging of lattice atoms and topological defects in graphene membranes","volume":"8","author":"Meyer","year":"2008","journal-title":"Nano Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"045404","DOI":"10.1088\/0022-3727\/43\/4\/045404","article-title":"Conductivity engineering of graphene by defect formation","volume":"43","author":"Jafri","year":"2010","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1492","DOI":"10.1103\/PhysRev.109.1492","article-title":"Absence of diffusion in certain random lattices","volume":"109","author":"Anderson","year":"1958","journal-title":"Phys. Rev."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"556","DOI":"10.1007\/s11433-013-5033-5","article-title":"Study on the large-scale assembly and fabrication method for SWCNTs nano device","volume":"56","author":"Xu","year":"2013","journal-title":"Sci. China Phys. Mech. Astron."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"869","DOI":"10.1063\/1.1700065","article-title":"The motion and precipitation of suspensoids in divergent electric fields","volume":"22","author":"Pohl","year":"1951","journal-title":"J. Appl. Phys."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"1095","DOI":"10.1088\/0957-4484\/15\/8\/039","article-title":"Dielectrophoresis of carbon nanotubes using microelectrodes: A numerical study","volume":"15","author":"Dimaki","year":"2004","journal-title":"Nanotechnology"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"115204","DOI":"10.1088\/0957-4484\/21\/11\/115204","article-title":"Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes","volume":"21","author":"Bartolomeo","year":"2010","journal-title":"Nanotechnology"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"286","DOI":"10.1002\/adma.200900864","article-title":"Nanogap electrodes","volume":"22","author":"Li","year":"2010","journal-title":"Adv. Mater."}],"container-title":["Micromachines"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2072-666X\/6\/9\/1317\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:48:10Z","timestamp":1760215690000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2072-666X\/6\/9\/1317"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9,8]]},"references-count":26,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2015,9]]}},"alternative-id":["mi6091317"],"URL":"https:\/\/doi.org\/10.3390\/mi6091317","relation":{},"ISSN":["2072-666X"],"issn-type":[{"type":"electronic","value":"2072-666X"}],"subject":[],"published":{"date-parts":[[2015,9,8]]}}}