{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,15]],"date-time":"2025-11-15T17:06:14Z","timestamp":1763226374317,"version":"build-2065373602"},"reference-count":20,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2016,8,5]],"date-time":"2016-08-05T00:00:00Z","timestamp":1470355200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer methods are categorized to film transfer, device transfer connectivity last, and immediate connectivity at device transfer. Applications of these transfer methods are film bulk acoustic resonator (FBAR) on LSI, lead zirconate titanate (Pb(Zr,Ti)O3) (PZT) MEMS switch on LSI, and surface acoustic wave (SAW) resonators on LSI using respective methods. A selective transfer process was developed for multiple SAW filters on LSI. Tactile sensors and active matrix electron emitters for massive parallel electron beam lithography were developed using the through-Si vias.<\/jats:p>","DOI":"10.3390\/mi7080137","type":"journal-article","created":{"date-parts":[[2016,8,5]],"date-time":"2016-08-05T10:10:24Z","timestamp":1470391824000},"page":"137","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Stacked Integration of MEMS on LSI"],"prefix":"10.3390","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8779-4306","authenticated-orcid":false,"given":"Masayoshi","family":"Esashi","sequence":"first","affiliation":[{"name":"Micro System Integration Center (\u03bcSIC), The World Premier International Research Center Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-0845, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shuji","family":"Tanaka","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2016,8,5]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1186\/2213-9621-1-3","article-title":"Heterogeneous integration by adhesive bonding","volume":"1","author":"Esashi","year":"2013","journal-title":"Micro Nano Syst. 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