{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,4]],"date-time":"2026-04-04T03:49:20Z","timestamp":1775274560188,"version":"3.50.1"},"reference-count":26,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2010,5,5]],"date-time":"2010-05-05T00:00:00Z","timestamp":1273017600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75\u2013100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.<\/jats:p>","DOI":"10.3390\/s100504643","type":"journal-article","created":{"date-parts":[[2010,5,5]],"date-time":"2010-05-05T11:38:16Z","timestamp":1273059496000},"page":"4643-4654","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":45,"title":["A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors"],"prefix":"10.3390","volume":"10","author":[{"given":"Kow-Ming","family":"Chang","sequence":"first","affiliation":[{"name":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan"}]},{"given":"Chih-Tien","family":"Chang","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan"}]},{"given":"Kuo-Yi","family":"Chao","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan"}]},{"given":"Chia-Hung","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan"}]}],"member":"1968","published-online":{"date-parts":[[2010,5,5]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"70","DOI":"10.1109\/TBME.1970.4502688","article-title":"Development of an ion-sensitive solid-state device for neuro-physiological measurements","volume":"BME 17","author":"Bergveld","year":"1970","journal-title":"IEEE Trans. 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